CompactCellTM Static RAM
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
limitation02
CompactCellTM Static RAM
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GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
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SA6954
Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to
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S29WSxxxN
S29WS256N,
S29WS128N,
S29WS064N
16-Bit)
SA6954
S29WS064N
S29WS128N
S29WS256N
WS128N
FFC00
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Untitled
Abstract: No abstract text available
Text: TPA6140A2 www.ti.com. SLOS598A – MARCH 2009 – REVISED OCTOBER 2009 CLASS-G DIRECTPATH STEREO HEADPHONE AMPLIFIER
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TPA6140A2
SLOS598A
TPA6140)
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RFT resistors
Abstract: No abstract text available
Text: TPA6140A2 www.ti.com . SLOS598 – MARCH 2009 CLASS-G DIRECTPATH STEREO HEADPHONE AMPLIFIER
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TPA6140A2
SLOS598
TPA6140)
RFT resistors
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PDF
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Untitled
Abstract: No abstract text available
Text: TPA6140A2 www.ti.com . SLOS598 – MARCH 2009 CLASS-G DIRECTPATH STEREO HEADPHONE AMPLIFIER
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TPA6140A2
SLOS598
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PDF
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Untitled
Abstract: No abstract text available
Text: TPA6140A2 www.ti.com . SLOS598 – MARCH 2009 CLASS-G DIRECTPATH STEREO HEADPHONE AMPLIFIER
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TPA6140A2
SLOS598
TPA6140)
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740-0007
Abstract: EN29GL064 6A000
Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and
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EN29GL064
8192K
4096K
16-bit)
740-0007
EN29GL064
6A000
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SA-275
Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document
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Am29PDL129H
S29PL129J
Am29PDL129J
SA-275
2aa 555
SA1127
SA1-108
SA1115
SA298
SA283
SA1117
PDL128G
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M420000000
Abstract: FSB073 3FE00
Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector
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Am42DL640AG
16-Bit)
73-Ball
5M-1994.
M420000000
FSB073
3FE00
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MX29LV640D
Abstract: A0-A21 MX29LV640E Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX
Text: MX29LV640D T/B MX29LV640D T/B DATASHEET The MX29LV640D T/B product family is not recommended for new designs. The MX29LV640E T/B family is the recommended replacement. Please refer to MX29LV640E T/B datasheet for full specifications and ordering information, or contact your local sales
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MX29LV640D
MX29LV640E
MX29LV640E
PM1208
64M-BIT
A0-A21
Q0-Q15
MX29LV640DT
0001111XXX
MX29LV640DBTC-90G
1000010XXX
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MX29LV640ebt
Abstract: MX29LV640EB MX29LV640EBTI-70G 29LV640 MX29LV640E mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132
Text: MX29LV640E T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable
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MX29LV640E
64M-BIT
128-word
MX29LV640ebt
MX29LV640EB
MX29LV640EBTI-70G
29LV640
mx29lv640etti
MX29LV640ETTI-70G
A0-A21
Q0-Q15
PM-132
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FTA073
Abstract: No abstract text available
Text: Am50DL128BH Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am50DL128BH
FTA073--73-Ball
FTA073
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AM29DL640H
Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
Text: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am75PDL191BHHa/
Am75PDL193BHHa
Am75PDL191BHHa/Am75PDL193BHHa
AM29DL640H
FTE073
PDL127
PDL127H
PDL129
PDL129H
cef3
sa2111
AM29DL640
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SA452
Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this
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Am29LV2562M
S29GL512N
S29GL512N
SA452
SA336
SA424
120R
SA487
EE8000
a78000a7ffff
c58000c5ffff
SA4871
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TSOP-20 FOOTPRINT
Abstract: tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL S29PL-J
Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29PL-J
16-Bit)
S29PL-J
TSOP-20 FOOTPRINT
tray datasheet bga 8x9
JESD 95-1, SPP-010
PL032J
AM29PDL
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S29JL064H
Abstract: S29PL064J 29F400 flash
Text: Am29DL640H Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29JL064H for TSOP packages and S29PL064J (for FBGA packages) supersede AM29DL320H as the factory-recommended migration path. Please refer to each respective datasheets for specifications and ordering information. Availability of this document is retained for reference and historical
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Am29DL640H
S29JL064H
S29PL064J
AM29DL320H
S29JL064H
S29PL064J
29F400 flash
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SA158
Abstract: SA214 8adrr
Text: 6 3/+6 3/ + for Multi-Chip Products MCP 0HJDELW 0 [ %LW &026 9ROWRQO\ 6LPXOWDQHRXV 5HDG:ULWH 3DJH 0RGH )ODVK 0HPRU\ Datasheet PRELIMINARY Distinctive Characteristics ² $Ã6Ã
t
hr
hrÃp
r ² Ã6ÃvphyÃhqiÃqrÃp
r
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S29PL127H
SA158
SA214
8adrr
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samsung ba92
Abstract: BA137 k8p3215
Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8P6415UQB
64-Ball
60Solder
samsung ba92
BA137
k8p3215
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10001XXXXX
Abstract: No abstract text available
Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2M x 16-Bit CMOS 3.0 Volt-Only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29PL-J
16-Bit)
S29PL-J
10001XXXXX
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EN29GL064
Abstract: cFeon cFeon EN
Text: EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and
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EN29GL064
8192K
4096K
16-bit)
8-word/16ombinations
EN29GL064
48-pin
48-ball
cFeon
cFeon EN
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PM1076
Abstract: A0-A21 MX29LV640B Q0-Q15 MX29LV640BTTC-90G
Text: MX29LV640B T/B FEATURES 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable
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MX29LV640B
64M-BIT
128-word
PM1076
A0-A21
Q0-Q15
MX29LV640BTTC-90G
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Untitled
Abstract: No abstract text available
Text: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features Power supply voltage of 1.7 to 1.95V
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S71WSxxxJ
16-bit)
66MHz
S71WS
S71WS256/128/064J
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asme SA388
Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ
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S29GL-M
S29GL256MS29GL128MS29GL064MS29GL032M
S29GL128MS29GL128N
S29GL256MS29GL256N
S29GLxxxN
00-B-5
S29GL032M
LAA064
asme SA388
gl128m
A2113
S29GL256
E78000
S29GL128N
TSOP56 S29GL128N
sa32sa35
S29GLxxxM
BGA-63
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