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3M Interconnect CEF-3BV TAPE COND ADH BLK 48.82"X54.7YDS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CEF-3BV	Bulk			30	1 - 10 - 100 $3204.373 1000 $3204.373 10000 $3204.373	Buy Now
Avnet Americas	CEF-3BV	Bulk		19 Weeks, 3 Days	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Panasonic Electronic Components KR1800SCEF3 BATTERY PACK NICD 3.6V SC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	KR1800SCEF3	Bulk			1	1 $15.01 10 $15.01 100 $15.01 1000 $15.01 10000 $15.01	Buy Now
Fox Electronics FO5LSCEF30.0-T1 Crystal Oscillator 30MHz 3.3V 6-Pin SMD T/R - Tape and Reel (Alt: FO5LSCEF30.0-T1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FO5LSCEF30.0-T1	Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Fox Electronics FC3BSDCEF32.0-T3 Crystal 32MHz 10pF 4-Pin Surface Mount T/R - Tape and Reel (Alt: FC3BSDCEF32.0-T3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FC3BSDCEF32.0-T3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Fox Electronics FC3BGCCEF32.0-T3 FX325BG/32/C/C/F/E/1/0/\|/Z/\|/\| - Tape and Reel (Alt: FC3BGCCEF32.0-T3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FC3BGCCEF32.0-T3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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CEF3 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CEP35P10 Abstract: No abstract text available Text: CEP35P10/CEB35P10 CEF35P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -32A, RDS ON =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.	Original	CEP35P10/CEB35P10 CEF35P10 -100V, O-220 O-263 CEP35P10	PDF
Magnetic Shielding Sheet Abstract: em 18 rfid Text: 3M EMI/EMC Electronic Materials Solutions for Today’s Electronics • EMI Shielding Tapes • EMI Grounding Adhesives and Gaskets • EMI Absorbers • Flux Field Directional Materials • NFC, Wireless Power, Magnetic Shielding Materials Easy-to-use shielding, absorbing, grounding	Original	225-3S-06 9699HB Magnetic Shielding Sheet em 18 rfid	PDF
LT3973-3.3 Abstract: D3396 e963 3n02 LT3971-3.3 Text: 123455678 5E 123456789A6BC3DEF7989A63A38E3 E339F3B63569EFBC3F8E3A63 D39E3!A5CE3A39"3#9"86EFF3 D3B63 $	Original	123456789A6BC3DEF7 89A63A 39F3B63569 86EFF3 979E6837A6F8B68375 5CB89A63A 3F598E C97B89A6F38 F3963A6E3C5 9F896 LT3973-3.3 D3396 e963 3n02 LT3971-3.3	PDF
LT3973-3.3 Abstract: 83968E6F98-39F3 LT3971-3.3 Text: 12345566789 ABCDEFCECBEBBE5FCDEF 123456789A6BC3DEF7989A63A38E31 E3139F3B3569EFBC393AC8BE3D3 9E3!"23A83#57$3B6 3#AAF838AACA9EF3 BE3AFF9#CE23!83BF3A6E375E683E5CB8E 37B66EC23 E3137A68ACF3B63E%8E6BC3&'43B839%E 3F 987963E 5E679EF3538A3	Original	123456789A6BC3DEF7 89A63A 39F3B3569 AAF838A BF3A6E375 B66EC23 37A68 ACF3B63E 5E679EF35 5E67-37B63 LT3973-3.3 83968E6F98-39F3 LT3971-3.3	PDF
Untitled Abstract: No abstract text available Text: 123452676 89ABCDEFEED598 123456789A6BC3DEF7989A63A38E311 E31139F3B3FE6FA33A3965789E3A9 98!3BC97B89A6F3B637B63"E35FE3#983B3	Original	89ABCDEF 123456789A6BC3DEF7 89A63A 139F3B3FE6FA C97B89A6F3B6 37B63 E35FE A683E6 E8E789A63CA F3968E$	PDF
Untitled Abstract: No abstract text available Text: KEMET Part Number: T491D336K035ZT B45196H6336K409 Capacitor, tantalum, 33 uF, 7343, +/-10% Tol, 35V@85C General Information + Bottom View Top View Pola rity F Ind ic a tor Kem et m a y c onstruc t a term ina l slot on the p ositive sid e a t Kem ets Op tion	Original	T491D336K035ZT B45196H6336K409) cef30060-d62f-484b-87d7-7570116f0450	PDF
Untitled Abstract: No abstract text available Text: 123455678 9ABCDEFFF5FCF2D 123456789A6BC3DEF7989A6 E339F3B3B9C3A3F8E3A	Original	123456789A6BC3DEF7 39F3B3 C97B89A6F23# 979E6837A6F8B68375 5CB89A63 3F598E C97B89A6F38 E36A39FACB89A63B6 234EB85 A6F8B68375	PDF
N-371 Abstract: B631E Text: 123452678 9ABBACDEFDBBEE2DABEABE5AC 123456789A6BC3DEF7989A63A38E3 E339F3B3BCCBF837A68ACCE33A3 E8BC3BC9!E3CB F3"#D$3D$3#%&2383 E8BC3BC9!E3CB F3967C5!96'3A E3B78A3	Original	123456789A6BC3DEF7 89A63A 39F3B3 BCCBF837A68 56789A6F36E7EFFB 37A68 F3967C5 E789A63" 6989A63 B89A63B6 N-371 B631E	PDF
Untitled Abstract: No abstract text available Text: 123456787 123456789A6BC3DEF7989A6 E339F3B3EB85E3973A3A D9"98BC3A8A3A68AC3$6"96E3 %D$&3'A E34B78A3AE789A63%'4&39"3CE EC3F F8E#37A68AC3	Original	123456789A6BC3DEF7 39F3B3 3B3F96 3FAC589A63 37A68 3967C5 98BC3 34B78A E789A63%	PDF
3566E Abstract: 37a65 Text: 123456778 94ABCDEFABCDEF1BB5DF2 ! 123456789A6BC3DEF7989A63A38E3 E339F359C833589C996 9EF38A3 + E3	Original	94ABCDEF 123456789A6BC3DEF7 89A63A 59C83 3589C9 E3CB8EF83F8B8E 9EF38A3 E35C8 EF9F8B67E3 F23/BFE 3566E 37a65	PDF
TDB6HK180N16RR Abstract: 6a65 Text: Technische Information / technical information IGBT-Module IGBT-modules TDB6HK180N16RR_B11 Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !325CEF36"#E$% 6D13BC1322C14BBB& ' 6*6+,231336134$62332C364&3	Original	TDB6HK180N16RR CEF36" 3BC1322C14BB 32C36 36423B 4256E D6345 6423B 36423B 6a65	PDF
FZT958 Abstract: FZT857 FZT957 DSA003719 Text: SOT223 PNP SILICON PLANAR HIGH CURRENT I ISSUE 3- JANUARY I 1996 FEATURES * FZT957 FZT958 I HIGH PERFORMANCE TRANSISTORS r 1 Amp continuous * Up to 2 Amps * Very * Excelient current c peak current low saturation voltage gain characteristics specified up to 1 Amp	Original	OT223 FZT957 FZT958 FZT857 FZT958 FZT857 FZT957 DSA003719	PDF
89A63A Abstract: No abstract text available Text: 123456787 123456789A6BC3DEF7989A6 E 33 9F3B389E33983B3B8E3 9!E3A58583"A3#$4%F23E389E39F3FE83&'3B 3 EA37AFF963 E8E78A3B6	Original	123456789A6BC3DEF7 9F3B389 39F3FE83& AFF96 E8E78A EFE83& A8E789A63B B96F83A ECC3F598E C97B89A6F2 89A63A	PDF
ba 5839 fb Abstract: 37a65 ba 5835 Text: 123456787 69ABCDEFBBAF5BAC 123456789A6BC3DEF7989A63A38E311 E 3113 9F 3 B 3 569EFBC 3 A8A 3 3 8B8 3 EFACEF 3 B9A5F 3 F96BC 3 A7EFF96 3 8BF F283 967AAB8EF3B6 3C!3	Original	69ABCDEF 123456789A6BC3DEF7 89A63A A7EFF96 AF79CCB8A E8E78A E689BC3 BC5B89A63 AF989A63 E8E7896 ba 5839 fb 37a65 ba 5835	PDF

Untitled Abstract: No abstract text available Text: 123456778 19ABCDEFEAEEE5CFADE541 123456789A6BC3DEF7989A6 E 33 BF 3 A8 3 7B66EC 3 B6 3 7B66EC 3 A5858 3 9EF 3 B 3 57! 3 B6 3 C96EB3 E"5CB8A 3 B6 3 8#A 3 $F2 3 %8 3 9F 3 9"C& 3 F598BCE 3 BF 3 B 3 F5C& 3 B6 3 A5858 3 F8B"E 3 'A 3 B6&3	Original	19ABCDEF 123456789A6BC3DEF7 B66EC C96EB F598B C97B89A6F3F57 3968E 234EB85 3C96EB	PDF
62A21 Abstract: 3HD23 E78E Text: 123456789 123456789A6BC3DEF7989A6 E339F3B3EB85E3973A 3967C5"96#33 D9#98BC3A8A3A68AC3%6#96E3 &D%' 3 A E34B78A3AE789A63&(4' 39#3CE!EC3F*F8E$37A68AC3	Original	123456789A6BC3DEF7 39F3B3 3B3F96 3FAC589A63 37A68 3967C5 98BC3 34B78A E789A63& 62A21 3HD23 E78E	PDF
Untitled Abstract: No abstract text available Text: 1234556678 9ABCDAEFC42A5A5ACA 123456789A6BC3DEF7989A63A38E3 E33BE39AC8BE3D3 9E37A68AC3!"3#983$59C8963%&43F#9873B6 33 968E6 E	Original	123456789A6BC3DEF7 89A63A 37A68 968E6 979E683A B89A63A 33967C5 EF3B63968E	PDF
Untitled Abstract: No abstract text available Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - JANUARY 1997 FEATURES * V C E O = -0 V 3 A m p C o n tin u o u s C u rre n t * 5 A m p P ulse C u rr e n t * * Low Saturation voltage High Gain ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BOL	OCR Scan	ZTX1151A	PDF