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Catalog Datasheet	MFG & Type	Document Tags	PDF
CEP35P10 Abstract: No abstract text available Text: CEP35P10/CEB35P10 CEF35P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -32A, RDS ON =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.	Original	CEP35P10/CEB35P10 CEF35P10 -100V, O-220 O-263 CEP35P10	PDF

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CEP35P10

Abstract: No abstract text available
Text: CEP35P10/CEB35P10 CEF35P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -32A, RDS ON =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.

Original

CEP35P10/CEB35P10 CEF35P10 -100V, O-220 O-263 CEP35P10

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