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    CEP35P10

    Abstract: No abstract text available
    Text: CEP35P10/CEB35P10 CEF35P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -32A, RDS ON =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		CEP35P10/CEB35P10 CEF35P10 -100V, O-220 O-263 CEP35P10 PDF