Contextual Info: A T & T ME L EC I C flS □05002b 00002Gfci 4 D T-66-21-51 WA-LS157, WP90348 List 7 Quad 2- to 1-Line Data Selector/Multiplexer The LS157 is a bipolar, NPN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wirebonded, 16-pin plastic DIP or surface mount package.

LS157

Abstract: WA-LS157 WP90348
Contextual Info: A T & T MELEC I C flS D □05002b 00002Gfci 4 T-66-21-51 WA-LS157, WP90348 List 7 Quad 2- to 1-Line Data Selector/Multiplexer The LS157 is a bipolar, N PN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wirebonded, 16-pin plastic D IP or surface m ount package.

HD44238

Abstract: DS2130 DS2130Q DSZ130Q HD44238C LM130
Contextual Info: DS2130Q DS2130Q DALLAS SEMICONDUCTOR Voice Messaging Processor PIN ASSIGNMENT FEATURES • Per-channel voice messaging processor for digitized voice storage and retrieval • High fidelity speech recording and playback at 8,12, 16, 24 and 32 Kbits/sec • Integral DTMFtransceiverfor remote touch-tone con­

OTI-087

Abstract: OTI-068 80386dx memory interfacing TL016 80386 chipset CHIPset for 80286 128x48 486 system bus 80386DX 80486
Contextual Info: OAK T E C HN O LO f i Y INC ¡¡¡¡E » • bTS^HOS 0000201 SSS »OAKT OAK TECHNOLOGY INC System Solutions in Silicon PRODUCT OVERVIEW O T I-0 8 7 LOCAL BUS VGA GRAPHICS CONTROLLER DESCRIPTION The OTI-OS7 is a highly integrated, single chip Local Bus Color Graphics Controller compatible with the IBM VGA standard.

FM16W08

Contextual Info: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: DUAL FULL-BWDGE PWM MOTOR DRIVER The A2919EB and A2919ELB motor drivers are designed to drive both windings of a bipolar stepper motor or bidirectionally control two dc motors over a temperature range of -40°C to +85°C. Both bridges are capable of sustaining 45 V and include internal pulse-width modu­

Contextual Info: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM1608B-SG

Abstract: AEC-Q100-002 MS-013 FM1608B
Contextual Info: Preliminary FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ +75 C) NoDelay Writes Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention (@ +75C) NoDelay Writes Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM18W08

Abstract: FM18W08-SG FM18W08-S AEC-Q100-002 MS-013 fm18w08sg cmos disadvantages
Contextual Info: Preliminary FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM16W08

Abstract: FM16W08-SG AEC-Q100-002 MS-013
Contextual Info: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ 75°C) NoDelay Writes Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

fm16w08

Abstract: fm16w08-sg
Contextual Info: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM1808B

Abstract: FM1808B-SG
Contextual Info: Pre-Production FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

D452

Contextual Info: 123456789A  !C"!#$C 123456278912 34526789ABCD6972672 D46E2 F9B57D26E2 A96F5F2 6729775D69726D4 26B52 A9FDE292657E52 5A5EE2 9A26B65F2 2

Contextual Info: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ +75 C) NoDelay Writes Advanced High-Reliability Ferroelectric Process