VTB9412B
Abstract: VTB9413B VTB9414B
Text: _ 5 bE D • 3030bDT 0001DS7 T52 ■ VCT V T B 9 4 1 2 B , 3B, VTB Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planarsilicon photodiode in
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3030bDT
0001DS7
VTB9412B,
T-41-51
VTB9412B
VTB9413B
VTB9414B
x1013
VTB9412B
VTB9413B
VTB9414B
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Untitled
Abstract: No abstract text available
Text: SbE ]> • 3 0 3 0 b 0 T 0001DS7 TSS M V C T V TB 9 4 1 2B , 3B, 4B VTB Process Photodiodes E G & 6 VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 20 F PRODUCT DESCRIPTION Small area planarsilicon photodiode in a recessed ceramic package. The package incorporates an infrared rejec
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0001DS7
T-41-51
VTB9414B
VTB9413B
VTB9412B
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CLI600
Abstract: CLI610
Text: CLI600 CLI610 Optical Switches GENERAL DESCRIPTION These optical sw itches couple an infrared light em itting diode and a silicon photodetector. The detec tor in the CLI610 is an N PN phototransistor. The CLI600 has a photodarlington providing higher sen
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CLI600
CLI610
CLI610
100mw,
33mw/Â
IF-20MA
CLI600
TA-25
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