VTB9412BH
Abstract: No abstract text available
Text: VTB Process Photodiode VTB9412BH, 9413BH PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package
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VTB9412BH,
9413BH
VTB9412BH
VTB9413BH
VTB9412BH
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Untitled
Abstract: No abstract text available
Text: VTB Process Photodiode VTB9412BH, 9413BH PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package
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VTB9412BH,
9413BH
VTB9412BH
VTB9413BH
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Untitled
Abstract: No abstract text available
Text: VTB Process Photodiodes VTB9412B, 9413B PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared rejection filter. These
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VTB9412B,
9413B
VTB9412B
VTB9413B
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9413B
Abstract: VTB9412B VTB9413B
Text: VTB Process Photodiodes VTB9412B, 9413B PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared rejection filter. These
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VTB9412B,
9413B
VTB9412B
VTB9413B
9413B
VTB9412B
VTB9413B
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C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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10-foot
C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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VTB8440
Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
Text: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue
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VTB100
VTB9413B
VTB8440
VTB8441
VTB8440B
VTB1013B
VTB1113
2122 opto
VTB1012B
1013B
VTB1112
VTB6061B
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VTP1220FBH
Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0
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2850K
VTS3082H
VTS3085H
VTS3185H
VTS3082H
VTS3085H
VTS3185H
VTP1220FBH
VTS3082
VTB9412BH
VTB1013B
VTP1012H
VTB8441BH
VTD34H
VTP4085H
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Untitled
Abstract: No abstract text available
Text: VTB9412B, 9413B VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20F Sm all area planar silicon photodiode in a recessed ceram ic package. The package incorporates an infrared re jection filter. These diodes have very high shunt resistance and good blue
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VTB9412B,
9413B
VTB9412B
VTB9413B
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VTB9412B
Abstract: VTB9413B VTB9414B
Text: _ 5 bE D • 3030bDT 0001DS7 T52 ■ VCT V T B 9 4 1 2 B , 3B, VTB Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planarsilicon photodiode in
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3030bDT
0001DS7
VTB9412B,
T-41-51
VTB9412B
VTB9413B
VTB9414B
x1013
VTB9412B
VTB9413B
VTB9414B
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TB505
Abstract: No abstract text available
Text: VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS PRODUCT DESCRIPTION FEATURES • • • • • This series of P on N silico n d iod es is primarily intended for use in the photovoltaic mode but may be used with a small reverse bias. The diod es have
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365nm,
at220nm.
VTS2011
VTS20â
TB505
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9413B
Abstract: VTB9413B VTB9412B
Text: V T B 9 4 1 2 B , 9413B VTB Process Photodiodes I PACKAGE DIMENSIONS inch mm CASE 20F PRODUCT DESCRIPTION 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared re
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VTB9412B,
9413B
VTB9412B
9413B
VTB9413B
VTB9412B
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Untitled
Abstract: No abstract text available
Text: SbE ]> • 3 0 3 0 b 0 T 0001DS7 TSS M V C T V TB 9 4 1 2B , 3B, 4B VTB Process Photodiodes E G & 6 VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 20 F PRODUCT DESCRIPTION Small area planarsilicon photodiode in a recessed ceramic package. The package incorporates an infrared rejec
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0001DS7
T-41-51
VTB9414B
VTB9413B
VTB9412B
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5041J
Abstract: photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B
Text: This Material VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS Copyrighted P R O D U C T D ESC RIPTIO N FEATURES • Enhanced UV to IR spectral range. • Integral IR rejection filters available • No UV enhancement- By Its • Response @ 220 nm, 0.06 A/W, Typ with
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365nm,
at220nm.
100mW/cm'
200mW/cmJ
5041J
photodiode vtb 5041
VTB8440B
operational amplifier-741
thermopile array
5050J
VTB1013B
VTB8444B
9415B
VTB1012B
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