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    VTB8441 Price and Stock

    Excelitas Technologies Corporation VTB8441BH

    SENSOR PHOTODIODE 580NM 2DIP MOD
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    DigiKey VTB8441BH Bulk 4,229 1
    • 1 $3.41
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    Newark VTB8441BH Bulk 146 1
    • 1 $3.78
    • 10 $3.49
    • 100 $3.32
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    RS VTB8441BH Bulk 47 1
    • 1 $4.52
    • 10 $3.97
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    Excelitas Technologies Corporation VTB8441H

    Photo Diode; No. Of Pins:2Pins; Diode Case Style:Radial Leaded; Wavelength Of Peak Sensitivity:920Nm; Angle Of Half Sensitivity ±:50°; Dark Current:100Pa; Operating Temperature Min:-20°C; Operating Temperature Max:75°C; Msl:- Rohs Compliant: Yes |Excelitas Tech VTB8441H
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    Newark VTB8441H Bulk 250
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    PerkinElmer Inc VTB8441H

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    Bristol Electronics VTB8441H 222
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    Quest Components VTB8441H 177
    • 1 $7.86
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    • 100 $4.847
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    VTB8441 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VTB8441 PerkinElmer Optoelectronics VTB Process Photodiode Original PDF
    VTB8441 EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB8441 EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB8441 EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB8441B PerkinElmer Optoelectronics VTB Process Photodiode Original PDF
    VTB8441B EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB8441B EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB8441B EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB8441B EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB8441B PerkinElmer Optoelectronics Over 600 obsolete distributor catalogs now available on the Datasheet Archive - PHOTODIODE ASSEMBLY Scan PDF
    VTB8441BH Excelitas Technologies Sensors, Transducers - Optical Sensors - Photodiodes - PHOTODIODE UHDKRES 8MM CER Original PDF

    VTB8441 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    A 69157 scr

    Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
    Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer


    Original     		PDF 90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3

    D92-02

    Abstract: 8441H d9202 VTB8440H NM40
    Text: VTB Process Photodiode VTB8440H, 8441H PACKAGE DIMENSIONS inch mm CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer


    Original     		PDF VTB8440H, 8441H VTB8440H VTB8441H D92-02 8441H d9202 VTB8440H NM40

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB8440B, 8441B PACKAGE DIMENSIONS inch mm CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared


    Original     		PDF VTB8440B, 8441B VTB8440B VTB8441B

    VTB8440B

    Abstract: VTB8441B 8441B
    Text: VTB Process Photodiodes VTB8440B, 8441B PACKAGE DIMENSIONS inch mm CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared


    Original     		PDF VTB8440B, 8441B VTB8440B VTB8441B VTB8440B VTB8441B 8441B

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiode VTB8440H, 8441H PACKAGE DIMENSIONS inch mm CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer


    Original     		PDF VTB8440H, 8441H VTB8440H VTB8441H

    vtb8440bh

    Abstract: VTB8441BH 8441BH PerkinElmer VTB8440BH application notes VTB8441B MAX2850 VTB8440B 2122 opto Diodes Ceramic
    Text: VTB Process Photodiode VTB8440BH, 8441BH PACKAGE DIMENSIONS inch mm CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared


    Original     		PDF VTB8440BH, 8441BH VTB8440BH VTB8441BH vtb8440bh VTB8441BH 8441BH PerkinElmer VTB8440BH application notes VTB8441B MAX2850 VTB8440B 2122 opto Diodes Ceramic

    VTB8440

    Abstract: VTB8441
    Text: VTB Process Photodiodes VTB8440, 8441 PACKAGE DIMENSIONS inch mm CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer


    Original     		PDF VTB8440, VTB8440 VTB8441 VTB8440 VTB8441

    VTB8440

    Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
    Text: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue


    Original     		PDF VTB100 VTB9413B VTB8440 VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B

    VTS3082

    Abstract: 476 20k cap VTL5C3 980-2675 VTS3085 VTP1188S 980-0004 photoconductive cells VT935G vactrol
    Text: PerkinElmer Photoconductive Cells, Emitters, Photo Diodes/Transistors, Optoisolators Photoconductive Cells Silicon Photodiodes Electrical/Optical Characteristics @ 25¡C Photoconductive cells provide a very economical and technically superior solution for many light level


    Original     		PDF 2850K VTS3082 15K/1 VTS3085 2K/55K VTS3082 476 20k cap VTL5C3 980-2675 VTP1188S 980-0004 photoconductive cells VT935G vactrol

    VTP1220FBH

    Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
    Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0


    Original     		PDF 2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H

    A 69157 scr

    Abstract: HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41
    Text: ND3% BASE1 XXXX4641-1306-1-P 1306 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 14:59 TS:TS date TS time LEDS & ACCESSORIES Find Datasheets Online LED DESIGN KITS • THROUGH-HOLE LEDS POWER LINE DESIGNER KIT HIGH-INTENSITY LED LAMPS CONT. T- 13⁄4 (5mm)


    Original     		PDF 74K5145 74K5144 74K5146 74K5147 74K5166 74K5170 71K0256 71K0273 71K0255 71K0272 A 69157 scr HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41

    VTB8440B

    Abstract: VTB8440 VTB8441B VTB process photodiodes VTB8441
    Text: VTB Process Photodiodes VTB8440B, 8441B PACKAGE DIMENSIONS inch mm CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared


    Original     		PDF VTB8440B, 8441B VTB8440B VTB8440B VTB8440 VTB8441B VTB process photodiodes VTB8441

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB8440, 8441 PACKAGE DIMENSIONS inch mm CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer


    Original     		PDF VTB8440, VTB8440 VTB8441

    Untitled

    Abstract: No abstract text available
    Text: 5bE D 3 03 0^0 =5 00D1D53 IVCT 307 V T B 8 4 4 0 B , 1B, 2B VTB Process Photodiodes T -4 1 -5 1 E G & G VACTEC PACKAGE DIMENSIONS inch mm CASE 21F PRODUCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a recessed ceramic package. The pack­ age incorporates an infrared rejection


    OCR Scan     		PDF 00D1D53 VTB8442B VTB8441B VTB8440B

    100 VTB 307

    Abstract: VTB 307 VTB8440B VTB8441B VTB8442B
    Text: SbE ]> , ^ 00 010 53 30301 0 307 I VCT VTB8440B. VTB Process Photodiodes T-41-51 E G & G VACTEC PA C K A G E DIMENSIONS inch mm CASE 21F PRO D UCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a recessed ceramic package. The pack­ age incorporates an infrared rejection


    OCR Scan     		PDF VTB8440B. T-41-51 x1012 8x1013 100 VTB 307 VTB 307 VTB8440B VTB8441B VTB8442B

    Untitled

    Abstract: No abstract text available
    Text: ShE D • BDBÜbüT 0 0 0 1 0 5 1 S34 W V C T VTB Process Photodiodes V T B 8 4 4 0 , 41, 42 E G & G VACTEC T-4 1-5 1 PACKAGE DIMENSIONS inch mm CASE 21 PRODUCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a recessed ceramic package. Chip is coated with a protective layer of epoxy.


    OCR Scan     		PDF VTB8440 VTB8441 VTBB442

    Vactec 8441b

    Abstract: VTB8441B Ir photodiodes 2B50 ID12 VTB8440B VTB844DB Vactec VTB process photodiodes photodiodes
    Text: 20/07 '00 11:02 01189845425 PACER COMPONENTS V T B8 44 0B , 8441B VTB Process Photodiodes 7'W 7' A P A C K A G E D IM E N S IO N S \r inch mm -ilû (7.B7) .070 (1.7B) .060 (1.52) (f^ 3 ,soï 60) H0M‘ fib MINIMUM .315 (6-00) .305 (7.75) (5.00) NOM. (5-00)


    OCR Scan     		PDF VTB8440B, 8441B in215 2850K 2S50K 80Qnrp Vactec 8441b VTB8441B Ir photodiodes 2B50 ID12 VTB8440B VTB844DB Vactec VTB process photodiodes photodiodes

    cm 45-12

    Abstract: VTB8440 VTB8441 775J
    Text: VTB Process Photodiodes V T B 8 4 4 0 , 8441 P A C K A G E D IM E N S IO N S inch mm CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 ¡5.16 mm2) P R O D U C T D ESC R IP T IO N Planar silicon photodiode in a re­ cessed ceramic package. Chip is coated with a protective layer of epoxy.


    OCR Scan     		PDF VTB8440, VTB8440 VTB8441 x1013 3D30bDcà D001573 cm 45-12 VTB8440 VTB8441 775J

    Untitled

    Abstract: No abstract text available
    Text: VTB8440B, 8441B VTB Process Photodiodes P A C K A G E DIMENSIONS inch mm CASE 21F PRO D UCT DESCRIPTION Pla n ar silico n photodiode in a re­ cessed ceram ic package. The package incorporates an infrared rejection filter. These diodes have very high shunt


    OCR Scan     		PDF VTB8440B, 8441B 00Q1574 VTB8441B VTB8440B

    VTB8440

    Abstract: VTB8441 VTBB442 V 14 K 320
    Text: SbE ]> • BDBDbQ^ 0001051 IVCT S34 VTB Process Photodiodes V T B 8 4 4 0 , 41, 4 2 E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm C A S E 21 8 mm C ER A M IC CHIP ACTIVE AREA: .008 In2 (5.16 mm2) PRODUCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a


    OCR Scan     		PDF VTB8440, T-41-51 VTB8440 VTB8441 VTBB442 1001c, 7x1013 x1013 VTB8440 VTB8441 VTBB442 V 14 K 320