Untitled
Abstract: No abstract text available
Text: Data Sheet Pacific Silicon Sensor Inc. Series 5: High Speed Epitaxial P-I-N Photodiodes In addition to these photodiodes, Pacific Silicon Sensor can design and manufacture other devices, in differing sizes or shape, in original packaging and/or with similar specifications; both
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850nm
718-PS11
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Untitled
Abstract: No abstract text available
Text: Photodiodes Surface mount type Side view RPMD-0101W1 Datasheet lDimensions (Unit : mm) lApplications Note : Unspecified tolerance shall be 0.15. • Car navigations, Car audios • Household applications • OAs, FAs • PCs, peripheral devices • Other general-purpose applications
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RPMD-0101W1
750nm)
R1102A
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IC vertical lg
Abstract: MW3736CKH
Text: CCD Area Image Sensor MW3736CKH 11mm 2/3 inch 768H CCD Area Image Sensor • Overview ■ Pin Assignments The MW3736CKH is a 11mm (2/3 inch) Interline Transfer CCD (ITCCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion section
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MW3736CKH
MW3736CKH
IC vertical lg
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SD-041-12-22-211
Abstract: T-23 2901222041 SD 102 M
Text: BLUE ENHANCED PIN PHOTODIODES SPECIFICATIONS Responsivity: Part Number 0.20 A/W min., 0.23 A/W typ. @ 450nm Total Area mm2 SD 041-12-22-011 isolated –211 0.85 SD 076-12-22-011 isolated -211 2.91 SD 100-12-22-021 isolated -221 5.1 SD 172-12-22-021 isolated -221
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450nm
SD-041-12-22-211
T-23
2901222041
SD 102 M
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VCSEL die bonding
Abstract: SATURN PY-CM11
Text: AXT PRODUCT INFORMATION 1300/1550nm InGaAs Monitoring PIN Photodiodes Part number: PY-CM11 Characteristics T=300K Conditions Wavelength range Responsivity Dark current Reverse breakdown Capacitance -3 V 1µA - 3 V, 1 MHz Min. 910 0.8 Typical 1310 0.85 Max.
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1300/1550nm
PY-CM11
1310nm
460X460
PY-CM11
VCSEL die bonding
SATURN
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H6779
Abstract: TPMH9003E01 H5784 R7400U BMOM AD H5783 H5773 H6780 pmt divider circuit pmt amplifier circuit
Text: PHOTOSENSOR MODULES H5773/H5783/H6779/ H6780/H5784 SERIES High Sensitivity, Wide Dynamic Range Fast Time Response The Photosensor Module is an optical sensor with extremely high sensitivity, capable of detecting light levels 1/10000 as low as those detectable with semiconductor photodiodes.
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H5773/H5783/H6779/
H6780/H5784
H5773,
H5783
H6779,
H6780
SE-171-41
TPMO1007E04
H6779
TPMH9003E01
H5784
R7400U
BMOM AD
H5773
pmt divider circuit
pmt amplifier circuit
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Untitled
Abstract: No abstract text available
Text: Data Sheet Pacific Silicon Sensor Inc. Series 5: High Speed Epitaxial P-I-N Photodiodes In addition to these photodiodes, Pacific Silicon Sensor can design and manufacture other devices, in differing sizes or shape, in original packaging and/or with similar specifications; both
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850nm
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VCSEL die bonding
Abstract: PY-CT11 InGaAs 0.85 um
Text: Preliminary specification 1300/1550nm 10Gbps Gbps InGaAs PIN Photodiodes Part number: PY-CT11 Characteristics T=300K Bandwidth Wavelength range Responsivity Dark current Reverse breakdown Capacitance Rise/Fall time Conditions -3 V -3 V 1µA - 3 V, 1 MHz
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1300/1550nm
10Gbps
PY-CT11
1310nm
460x250
PY-CT11
VCSEL die bonding
InGaAs 0.85 um
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VTB100H
Abstract: No abstract text available
Text: VTB Process Photodiodes VTB100H PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue
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VTB100H
VTB100H
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G701
Abstract: tip 1050 G705 ga01 G301 G302 G501 G502 G702 G703
Text: iC-OG 8-BIT DIFFERENTIAL SCANNING OPTO ENCODER FEATURES APPLICATIONS ♦ Monolithic construction with integrated photodiodes ensures excellent matching and technical reliability ♦ Short track spacing of 600µm ♦ Elimination of dark currents through differential scanning
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20-pin
G701
tip 1050
G705
ga01
G301
G302
G501
G502
G702
G703
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiodes G8421/G8371/G5851 series Long wavelength type Cut-off wavelength: 1.85 to 1.9 m Features Applications Long cut-off wavelength: 1.85 to 1.9 m Optical power meter 3-pin TO-18 package: low price Gas analyzer Thermoelectrically cooled TO-18 package: low dark current
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G8421/G8371/G5851
A3179
A3179-01
C1103-04
SE-171
KIRD1046E06
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Untitled
Abstract: No abstract text available
Text: Si PIN photodiodes S2506 series S6775 series S6967 Plastic SIP single in-line package S2506/S6775 series and S6967 are Si PIN photodiodes with large active areas, molded into a clear or visible-cut plastic SIP for detecting visible to near infrared range or near infrared range only. These Si PIN photodiodes feature high sensitivity, highspeed response and large active areas.
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S2506
S6775
S6967
S2506/S6775
S6967
S2506-02:
S2506-04:
S6775,
S6967:
S6775-01:
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S2281 series Si photodiode with BNC connector S2281 series is Si photodiodes sealed in a metal package with a BNC connector. This configuration allows easy connection to Hamamatsu C9329 photosensor amplifier S2281-01 has a large terminal capacitance which may cause a gain peaking to occur when C9329 is used with the
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S2281
C9329
S2281-01
S9219
E2573
SE-171
KSPD1044E02
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Untitled
Abstract: No abstract text available
Text: Si PIN photodiode S2744/S3588-08, -09 Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI TI scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance
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S2744/S3588-08,
S2744-08
S2744-09
S3588-08
S3588-09
SE-171
KPIN1049E06
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE GaAs PIN photodiode G8522 series High-speed response at low reverse voltage G8522 series are high-speed PIN photodiodes developed for optical communications and are capable of GHz gigahertz operation even at a low reverse voltage (2 V or less). Please contact our sales office with your specific needs.
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G8522
G8522-01:
G8522-02:
G8522-03:
SE-171
KGPD1008E02
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiodes G8422/G8372/G5852 series Long wavelength type Cut-off wavelength: 2.05 to 2.1 m Features Applications Cut-off wavelength: 2.05 to 2.1 m Gas analyzer 3-pin TO-18 package: low price Water content analyzer TE-cooled type TO-8 package: low dark current
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G8422/G8372/G5852
A3179
A3179-01
C1103-04
G8422-03
G8422-05
G8372-01
G8372-03
G5852-103
G5852-11
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Borosilicate
Abstract: No abstract text available
Text: Si photodiodes S2386 series For visible to IR, general-purpose photometry Features Applications High sensitivity Analytical instruments Low dark current Optical measurement equipment High reliability Superior linearity General ratings / Absolute maximum ratings
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S2386
S2386-18K
S2386-18L
S2386-5K
S2386-44K
S2386-45K
S2386-8K
S2386-14
SE-171
KSPD1035E04
Borosilicate
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TCD1200D
Abstract: TCD1200 TCD-12
Text: TCD1200D TENTATIVE The TCD1200D is a high sensitive and low dark current 2160 elements image sensor. The sensor can be used for facsimile, imagescanner and OCR, The device contains a row of 2160 photodiodes, which provide a 8 lines/mm (200 DPI) resolution
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TCD1200D
TCD1200D
TCD1200
TCD-12
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TCD120AC
Abstract: No abstract text available
Text: TCD120AC The TCD120AC is a contact type CCD linear image sensor. The device is consist of 5 staggered high sensitivity CCD chips. The device contains a row of 4800 photodiodes which provide a A00 dots/inch resolution across an A3 size paper. By the aid of analog line memories fabricated
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TCD120AC
TCD120AC
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TC17G
Abstract: Photodiode Array 32 element tcd storage gate ccd TCD128AC
Text: TCD128AC The TCD12P.AC is a contact type CCD linear image sensor. The device is consist of 4 CCD chips which are collinearly arranged. The device contains a row of 1728 photodiodes which provides a 8 dots/mm resolution across A4 size 216mm document. And this device includes
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TCD128AC
TCD12P
216mm)
128AC
TC17C014AF-0042r
432ensor.
TC17G
Photodiode Array 32 element
tcd storage gate ccd
TCD128AC
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PN303
Abstract: No abstract text available
Text: Panasonic PIN Photodiodes PN303 PIN Photodiode For optical control systems • Features • Fast response which is well suited to high speed m odulated light detection : tr, tf = 50 ns typ. • High photodetection sensitivity and wide dynamic responsivity
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PN303
900nm
PN303
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PD 2028 b
Abstract: No abstract text available
Text: SELECTION GUIDE PA RI NO. SYSTEM INFRARED EM ITTI MG DIODES : PHOTODIODES : LAMP CATEGORYBRIGHT LED PRODUCT •PHOTOTRANSISTORS • PHOTOREFLECTORS : LIGHT BED-DDDDDï PACKAGE TYPE LAMP CATEGORY: IR: Infrared Emitting Diodes PT: Phototransistors PD: Photodiodes
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940nm
880nm
840nm
PD 2028 b
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LIGHT POSITION CONTROL
Abstract: PNA3201F
Text: Panasonic PIN Photodiodes PNA3201F PIN Photodiode For optical control systems • Features • High sensitivity and low dark current • For one-dim ensional light-point position detection • G ood positional linearity • Small plastic package I Absolute Maximum Ratings Ta = 25°C
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OCR Scan
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PNA3201F
2856K)
900nm)
LIGHT POSITION CONTROL
PNA3201F
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Untitled
Abstract: No abstract text available
Text: 6112640 MICROPAC INDUSTRIES MICROPAC INDUSTRIES INC INC 91D ~T1 00360 D y . iff.g I DF|bliab4U S 66008 SERIES OPTOTRANSFORMER JUNE, 1984 DESCRIPTION: The 66008 series optotransformer consists of a pair of matched silicon photodiodes optically-coupled and spectrally
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