EUDYNA
Abstract: STM-16
Text: FID3Z2KX/LX PIN Photodiode FEATURES KX • Data rates up to 2.5 Gb/s • High Quantum Efficiency: 0.8A/W at 1,310nm • Low dark current: 0.1nA • Photosensitive area: 50µm diameter • Wide spectral response range: 900nm to 1,600nm APPLICATIONS • Optical transmission system: STM-1 OC-3 ,
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310nm
900nm
600nm
OC-12)
STM-16
OC-48)
310nm
550nm
EUDYNA
STM-16
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Untitled
Abstract: No abstract text available
Text: FCI-InGaAs-XXX-LCER High Speed InGaAs Photodiodes Mounted on Ceramic Packages w/Leads APPLICATIONS FEATURES  High  Low Noise Responsivity  High Speed  Spectral Range 900nm to 1700nm Speed Optical Communications  Gigabit Ethernet/Fibre Channel  SONET / SDH, ATM
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900nm
1700nm
44E15
50E15
28E15
69E15
42E15
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Untitled
Abstract: No abstract text available
Text: 1A226 H igivfîerlottnance LED The wavelength for this LED is 900nm — ideal for unique sensor applictions. The d ou b le-len s op tical system achieves optimum coupling of power into the fiber. It’s packaged in a her metically sealed can to survive harsh
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1A226
900nm
l-800-`
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Untitled
Abstract: No abstract text available
Text: A dvanced P H o r o ik , I n c . ULTRA-LOW NOISE PIN PHOTODIODES SPECIFICATIONS Responsivity: 0.32 A/W minimum, 0.36 A/W typical @ 632.8nm; 0.50 A/W minimum, 0.55 A/W typical @ 900nm Series Resistance: 100£2maximum measured by applying +10mA to photodiode and measuring voltage
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900nm
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centronic osd100 6
Abstract: OSD5-3T OSD60-3T QD50-3T OSD15-3T MO-700 QD100-3T OSD1-3T osd60 CENTRONIC INC
Text: CENTRONIC INC, mS2SD bSE D E-0 DIV □□□□474 TTÔ « C E N B Series 3T High Speed Detection of Infrared Wavelengths Series 3T devices are specifically processed to maximize responsivity in the 800 to 1000nm range. Typical responsivity at 900nm is .61 A/W for single junction devices and .58 A/W for quadrants. These photodiodes are fabricated on ultra high resistivity silicon
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0DD0474
1000nm
900nm
OSD60-3T
OSD100-3T
QD50-3T
QD100-3T
centronic osd100 6
OSD5-3T
OSD15-3T
MO-700
OSD1-3T
osd60
CENTRONIC INC
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color sensor pd153
Abstract: PD153 circuit color sensor Sharp Semiconductor PD15-3 color sensor
Text: SH ARP ELEK/ MEL EC D IV 15E O C olor Sensor PD153 • I fllflO?^ 0005720 1 TO -18 Type Color Sensor F e a tu re s ■ 1. High sensitivity in long wavelength Shortcircuit current ratio Isc2 /Isci : MIN. 4.5 at A =900nm 2. Output corresponding to the wavelength of
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G005720
PD153
900nm
000nm)
T-41-51
color sensor pd153
PD153
circuit color sensor
Sharp Semiconductor
PD15-3
color sensor
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445142
Abstract: No abstract text available
Text: Ultra Low Noise Ultra-Low Noise PIN Photodiodes Specifications Responsivity: Series Resistance: 0.50 A/W minimum, 0.55 A/W typical @ 900nm 100Ω maximum measured by applying +10mA to photodiode and measuring voltage across anode and cathode Part Number
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900nm
950nm.
830nm
445142
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Untitled
Abstract: No abstract text available
Text: Right Angle - 2 Leads Clear Epoxy - 900nm Peak Right Angle - 2 Leads Clear Epoxy - 900nm Peak INDEX ● ● ● ● ● PRODUCT TREE Product Table Table Footnotes Order Samples Stock/Price Request Sales and Tech Support 1. 2. 3. 4. Product Gallery Opto-Electronic Components
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900nm
OEDST23G
20leads
20clear
20epoxy
20900nm
20peak
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Photodetector Array
Abstract: 860nm 20GHz Bandwidth PIN Photodetector 650NM photodetector
Text: FCI-GaAs-XXM High Speed GaAs Arrays APPLICATIONS  Fiber Optic Receiver Monitor  SM or MM Fiber Ribbon  Parallel Interconnects  DWDM FEATURES  High Speed FEATURES  High Responsivity  High Speed  Low Noise  High  Spectral Responsivity Range 900nm to 1700nm
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900nm
1700nm
650nm
860nm
FCI-GaAs-12M
850nm
Photodetector Array
860nm
20GHz Bandwidth PIN Photodetector
650NM photodetector
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Untitled
Abstract: No abstract text available
Text: PRODUCT INFORMATION 900 nm 1A226 H igh-Ferformance LED The wavelength for this LED is 900nm —ideal for unique sensor applictions. The d ou b le-len s op tical system achieves optimum coupling of power into the fiber. It’s packaged in a her metically sealed can to survive harsh
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1A226
900nm
1-800-96M
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Untitled
Abstract: No abstract text available
Text: High Speed PIN High Speed PIN Photodiodes Specifications Responsivity: Series Resistance: Part Number 0.50 A/W minimum, 0.55 A/W typical @ 900nm. YAG enhanced are available for .35 A/W @ 1064nm on a custom basis. 100Ω maximum measured by applying +10mA to photodiode and measuring
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900nm.
1064nm
020-1ues
950nm.
830nm
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centronic osd100 6
Abstract: LD20-3 MD100-3 MD25-3 OSD100-3 OSD200-3 QD100-3 QD320-3
Text: CENTRONIC LTD 4SE D m s ifl? □□□□on i Silicon Photodetectors « cent Series 3 Near IR Sensitive, High Speed The Series 3 photodetectors are designed for high speed and maximum responsivity in the near infra-red region. They are particularly suited to high speed pulsed applications in the region of 900nm and for other applications where the low capacitance obtained at 100
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900nm
LD20-3,
MD25-3,
MD100-3
LD25-3,
LD20-3"
MD25-3*
centronic osd100 6
LD20-3
MD25-3
OSD100-3
OSD200-3
QD100-3
QD320-3
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FID3Z1KX
Abstract: quantum city STM-16 InGaAs photodiode spectral response
Text: InGaAs PIN Photodiode FID3Z1KX/LX FEATURES • • • • • Data rates up to 2.5 Gb/s High Quantum Efficiency: 0.8A/W at 1,310nm Low dark current: 0.1nA Photosensitive area: 50µm diameter Wide spectral response range: 900nm to 1,600nm KX APPLICATIONS • Optical transmission system: STM-1 OC-3 ,
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310nm
900nm
600nm
OC-12)
STM-16
OC-48)
310nm
550nm
FCSI0199M200
FID3Z1KX
quantum city
STM-16
InGaAs photodiode spectral response
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Photodiodes
Abstract: No abstract text available
Text: FCI-InGaAs-XXX-ACER High Speed InGaAs Photodiodes Mounted on Wedge Ceramic Packages APPLICATIONS FEATURES  High  5° Angle Ceramic Noise  High Responsivity  High Speed  Spectral Range 900nm to 1700nm Speed Optical Communications  Gigabit Ethernet/Fibre Channel
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900nm
1700nm
44E15
50E15
28E15
69E15
42E15
Photodiodes
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TA23C
Abstract: No abstract text available
Text: FCI-InGaAs-XXX-WCER High Speed InGaAs Photodiodes Mounted on Wraparound Ceramic Packages APPLICATIONS FEATURES  High  Low Noise Responsivity  High Speed  Spectral Range 900nm to 1700nm Speed Optical Communications  Gigabit Ethernet/Fibre Channel
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900nm
1700nm
44E15
50E15
28E15
69E15
42E15
TA23C
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900nm LED
Abstract: NJL5165K NJL61H000 NJL61H000A NJL61V000 NJL61V000A NJL62H000 NJL63H000 NJL63H000A NJL64H000
Text: 保守・廃品種一覧 1. 保守品種 品 目 フォトリフレクタ 品 名 NJL5165K-H1 代 替 品 NJL5165K-H2 相 違 点 外 形 ○ 特 性 ○ 2. 廃品種 品 赤外 LED 赤外 LED 目 λp=940nm (λp=900nm) 受光素子 (ﾌｫﾄﾀﾞｲｵｰﾄﾞ)
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NJL5165K-H1
NJL5165K-H2
940nm)
900nm)
NJL1104B
NJL1120B
NJL1121B
NJL1121B-S
NJL6103B
NJL611B
900nm LED
NJL5165K
NJL61H000
NJL61H000A
NJL61V000
NJL61V000A
NJL62H000
NJL63H000
NJL63H000A
NJL64H000
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0852321021
Abstract: T-23 178 09T
Text: BI-CELL AND QUADRANT PHOTODIODES SPECIFICATIONS PER ELEMENT Responsivity: 0.32 A/W min., 0.38 A/W typ. @ 632.8nm; 0.50 A/W min., 0.62 A/W typ. @ 900nm Non-uniformity between elements: Part Number Total Shunt Area Resistance1 per Element (mm2) 5% deviation max., 1% typ.
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900nm
950nm
1x10-14
2x10-14
0852321021
T-23
178 09T
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111 305
Abstract: T-23
Text: ULTRA LOW NOISE PIN PHOTODIODES SPECIFICATIONS Responsivity: Part Number 0.32 A/W min., 0.38 A/W typ. @ 632.8nm; 0.50 A/W min., 0.62 A/W typ. @ 900nm Total Area mm2 SD 057-14-21-011 1.67 Active Area (in) 0.051 x Shunt Resistance1 Dark Current1 at 5V Breakdown
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900nm
0x10-14
4x10-14
8x10-14
111 305
T-23
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SD-020
Abstract: 076113 T-23
Text: HIGH SPEED PIN PHOTODIODES SPECIFICATIONS Responsivity: Part Number 0.50 A/W min., 0.62 A/W typ. @ 900nm Total Area Active Area mm2 (in) SD 020-11-33-211 0.20 0.020 (dia). SD 041-11-33-211 0.85 0.040 x Dark Current1 at 50V Breakdown Voltage2 at 10µA Capacitance3
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900nm
4x10-14
8x10-14
0x10-13
3x10-13
SD-020
076113
T-23
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Untitled
Abstract: No abstract text available
Text: ULTRA LOW NOISE PIN PHOTODIODES SPECIFICATIONS Responsivity: Part Number 0.32 A/W min., 0.38 A/W typ. @ 632.8nm; 0.50 A/W min., 0.62 A/W typ. @ 900nm Total Area mm2 SD 057-14-21-011 1.67 Active Area (in) 0.051 x Shunt Resistance1 Dark Current1 at 5V Breakdown
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900nm
0x10-14
4x10-14
8x10-14
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Untitled
Abstract: No abstract text available
Text: Photo Diode Product No: MTD3010N Peak Sensitivity Wavelength: 900nm The MTD3010N is a photo diode in a TO-18 metal can domed package. It is well suited for high reliability and high speed applications. FEATURES APPLICATIONS > Linearity of Ee vs IL > Optical Switches
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MTD3010N
900nm
MTD3010N
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centronic osd100 6
Abstract: OSD15-5T OSD50-5T LD35-5T OSD35-5T LD20-5T OSD100-5T OSD5-ST OSD60-5T QD100-5T
Text: Series 5T Blue Sensitive for Biased or Unbiased Operation The Centronic Series 5 T photodiodes offer high blue sensitivity coupled with high shunt resistance and low dark leakage current. They are particularly suited to low light level applications from 4 3 0 - 900nm where the highest signal to noise ratio
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900nm
MD25-5T
MD100-5T
MD144-5T
centronic osd100 6
OSD15-5T
OSD50-5T
LD35-5T
OSD35-5T
LD20-5T
OSD100-5T
OSD5-ST
OSD60-5T
QD100-5T
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Untitled
Abstract: No abstract text available
Text: CENTRONIC LTD 45E D m S l f l 7 OOODOll 1 • C E N T Silicon Photodetectors Series 3 Near IR Sensitive, High Speed The Series 3 photodetectors are designed for high speed and maximum responsivity in the near infra-red region. They are particularly suited to high speed pulsed applications in the region of 900nm and for other applications where the low capacitance obtained at 100
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900nm
LD20-3,
MD25-3,
MD100-3
LD25Elements
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TEFT4300
Abstract: 8239 Diode IR 8294 Infrared emitter
Text: TEFT4300 Silicon NPN Phototransistor Description TEFT4300 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters with l p 900nm).
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TEFT4300
TEFT4300
900nm)
D-74025
21-Aug-96
8239
Diode IR 8294
Infrared emitter
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