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    Excelitas Technologies Corporation VTB1112H

    SENSOR PHOTODIODE 920NM TO46-2
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    DigiKey VTB1112H Bulk 258 1
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    Newark VTB1112H Bulk 250
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    Excelitas Technologies Corporation VTB1112BH

    Diode, Photo, SAR 330 to 720nm, Id 100pA, Isc 6uA, Voc 420mV, TO-46, Rs 0.25Gohm | Excelitas Technologies Sensors VTB1112BH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS VTB1112BH Bulk 1
    • 1 $16.4
    • 10 $14.76
    • 100 $13.94
    • 1000 $13.94
    • 10000 $13.94
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    VTB1112 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    VTB1112 PerkinElmer Optoelectronics VTB Process Photodiode Original PDF
    VTB1112 EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB1112 EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB1112B PerkinElmer Optoelectronics Photodiode, PN Module, 0.1nA Original PDF
    VTB1112B EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB1112B EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB1112BI EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB1112BI EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB1112I EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB1112I EG&G Vactec VTB Process Photodiodes Scan PDF

    VTB1112 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB1112, 1113 PACKAGE DIMENSIONS inch mm CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. Cathode is common to the case. These diodes have very


    Original     		PDF VTB1112, VTB1112 VTB1113

    VTB1113H

    Abstract: VTB1112H
    Text: VTB Process Photodiodes VTB1112H, 1113H PACKAGE DIMENSIONS inch mm CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. Cathode is common to the case. These diodes have very


    Original     		PDF VTB1112H, 1113H VTB1112H VTB1113H VTB1113H VTB1112H

    VTB1113B

    Abstract: VTB1112B
    Text: VTB Process Photodiodes VTB1112B, 1113B PACKAGE DIMENSIONS inch mm CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. The package


    Original     		PDF VTB1112B, 1113B VTB1112B VTB1113B VTB1113B VTB1112B

    1113B

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB1112B, 1113B PACKAGE DIMENSIONS inch mm CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. The package


    Original     		PDF VTB1112B, 1113B VTB1112B VTB1113B 1113B

    VTB1113BH

    Abstract: dual photodiode TO46 package
    Text: VTB Process Photodiode VTB1112BH, 1113BH PACKAGE DIMENSIONS inch mm CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. The package


    Original     		PDF VTB1112BH, 1113BH VTB1112BH VTB1113BH VTB1113BH dual photodiode TO46 package

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiode VTB1112BH, 1113BH PACKAGE DIMENSIONS inch mm CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. The package


    Original     		PDF VTB1112BH, 1113BH VTB1112BH VTB1113BH

    VTB1113

    Abstract: VTB1112
    Text: VTB Process Photodiodes VTB1112, 1113 PACKAGE DIMENSIONS inch mm CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. Cathode is common to the case. These diodes have very


    Original     		PDF VTB1112, VTB1112 VTB1113 VTB1113 VTB1112

    VTB1112H

    Abstract: VTB1113H
    Text: VTB Process Photodiodes VTB1112H, 1113H PACKAGE DIMENSIONS inch mm CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. Cathode is common to the case. These diodes have very


    Original     		PDF VTB1112H, 1113H VTB1112H VTB1113H VTB1112H VTB1113H

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTB8440

    Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
    Text: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue


    Original     		PDF VTB100 VTB9413B VTB8440 VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B

    VTP1220FBH

    Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
    Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0


    Original     		PDF 2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H

    Untitled

    Abstract: No abstract text available
    Text: VTB1112, 1113 VTB Process Photodiodes P A C K A G E DIMENSIONS inch mm CASE 19 PROD UCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.


    OCR Scan     		PDF VTB1112, 3030LiGc 1Q90Q

    VTB1112B

    Abstract: VTB1113B
    Text: VTB Process Photodiodes VTB 11 12B , 1113B PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 19 Small area planar silicon photodiode in a lensed, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high


    OCR Scan     		PDF VTB1112B, 1113B 110CC VTB1112B VTB1113B 3030bCH VTB1112B VTB1113B

    Untitled

    Abstract: No abstract text available
    Text: SbE D • BüBObOS 0001035 3e]! H V C T V TB 1 1 1 2I , 11131 VTB Process Photodiodes E G & 6 VACTEC PACKAGE DIMENSIONS inch mm CASE 19 PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead, TO-46 package. Chip is isolated from the case. These


    OCR Scan     		PDF VTB1113I VTB1112I

    TB505

    Abstract: No abstract text available
    Text: VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS PRODUCT DESCRIPTION FEATURES • • • • • This series of P on N silico n d iod es is primarily intended for use in the photovoltaic mode but may be used with a small reverse bias. The diod es have


    OCR Scan     		PDF 365nm, at220nm. VTS2011 VTS20â TB505

    Untitled

    Abstract: No abstract text available
    Text: V T B 1 1 1 2 B , 1113B VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 19 TD-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) Small area planar silicon photodiode in a lensed, dual lead TO-46 package. The package Incorporates an infrared


    OCR Scan     		PDF 1113B TD-46 VTB1112B VTB1113B

    5041J

    Abstract: photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B
    Text: This Material VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS Copyrighted P R O D U C T D ESC RIPTIO N FEATURES • Enhanced UV to IR spectral range. • Integral IR rejection filters available • No UV enhancement- By Its • Response @ 220 nm, 0.06 A/W, Typ with


    OCR Scan     		PDF 365nm, at220nm. 100mW/cm' 200mW/cmJ 5041J photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B

    VTB1112BI

    Abstract: No abstract text available
    Text: S la E D 3G30bCH G001G34 VTB Process Photodiodes E G 8. G MSS H V C T VT B 11 12B I, 13BI 7 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) Small area planar silicon photodiode in


    OCR Scan     		PDF G001G34 VTB1112BI, to-46 vtb1112bi vtb1113bi 2x1013 VTB1112BI

    VTB1112I

    Abstract: VTB1113I
    Text: SbE J> m B O B O b C ì 0 0 0 1 D 3 5 3 e]! « V C T VTB Process Photodiodes V T B 1 1 1 2 I , 11131 E G & G VACTEC PACKAGE DIMENSIONS inch mm CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Sm all area planar silicon photodiode in


    OCR Scan     		PDF 0001D35 VTB1112I, VTB1112I VTB1113I