VTB6060J
Abstract: VTB6061J Vactec 6061J
Text: SbE D • 3030bCH 0DÜ1 ÜM7 DD3 VTB Process Photodiodes E G & G IVCT VTB6060J, 6061J VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) Large area planar silicon photodiode in a 'flat" w indow , three lead T O -8 pack
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3030bCH
VTB6060J,
6061J
T-41-51
VTB60oefficient
6x1012
x1013
VTB6060J
VTB6061J
Vactec
6061J
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VTT1112
Abstract: transistor T2S DDD11 VTT1113 VTT1114 0 205 001 040 transistor c 4161
Text: SbE 3030bCH D DDD11Ö3 .050" NPN Phototransistors VCT V T T 1 1 1 2 , 13, 14 TO-46 Lensed Package E G & G T2S T-41-61 VACTEC PAC KAG E DIMENSIONS inch mm CASE 3 T0-4G HERMETIC (LENSED) CHIP TYPE: 50T PRO D UCT DESCRIPTION AB SO LU T E MAXIMUM RATINGS (@ 25°C u n le s s otherw ise noted)
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3030bCH
DDD11Ã
VTT1112,
T-41-61
VTT1112
VTT1113
VTT1114
transistor T2S
DDD11
0 205 001 040
transistor c 4161
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photovoltaic cell
Abstract: Vactec Vactec 25
Text: S£.E D 3030bCH DD01103 7b2 M V C T VTS-2 Process Photodiodes E G & G VACTEC VTS 9 1 , 92, 93 _ P R O D U C T D E S C R IP T IO N T-41-51 P A C K A G E D IM E N S IO N S inch mm Large area planar silicon photodiodes suitable for use in the photovoltaic
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3030bCH
T-41-51
100/iW/cm2
1001c.
photovoltaic cell
Vactec
Vactec 25
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Vactec
Abstract: DDD11 VTT1112 VTT1113 VTT1114
Text: SbE 3030bCH D DDD11Ö3 .050" NPN Phototransistors VCT V T T 1 1 1 2 , 13, 14 TO-46 Lensed Package E G & G T2S T-41-61 VACTEC PAC KAG E DIMENSIONS inch mm CASE 3 T0-4G HERMETIC (LENSED) CHIP TYPE: 50T PRO D UCT DESCRIPTION AB SO LU T E MAXIMUM RATINGS (@ 25°C u n le s s otherw ise noted)
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3030bCH
DDD11Ã
VTT1112,
T-41-61
VTT1112
VTT1113
VTT1114
Vactec
DDD11
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VTB5040
Abstract: photodiode 516 photodiode vtb 5041
Text: VCT 3030bCH Ü0D1G37 IbH 5bE T> G & G 4 1- ' V T B 5 0 4 0 , 5041 VTB Process Photodiodes E ^ VACTEC PA C K A G E DIMENSIONS inch mm CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRO D UCT DESCRIPTION Planar silicon photodiode in a "flat" w in dow , d u a l lead T O - 5 package.
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3030bCH
0D1G37
VTB5040,
vtb5040
vtb5041
9X1012
7x1013
VTB5040
photodiode 516
photodiode vtb 5041
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Vactec
Abstract: VTB9415 VTB9416
Text: SbE D 3030bCH 000105b Dlb M V C T VTB Process Photodiodes VTB9415, E G & G VACTEC 9416 T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 Small area planarsilicon photodiode in a recessed ceramic package. The chip is coated with a protective layer of
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3030bCH
VTB941
T-41-51
VTB9415
VTB9416
x1013
8x1013
Vactec
VTB9415
VTB9416
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VTB1112B
Abstract: VTB1113B
Text: VTB Process Photodiodes VTB 11 12B , 1113B PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 19 Small area planar silicon photodiode in a lensed, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high
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VTB1112B,
1113B
110CC
VTB1112B
VTB1113B
3030bCH
VTB1112B
VTB1113B
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VTS80
Abstract: EG&G VTS-3080
Text: VTS VTS Process Photodiodes PRODUCT DESCRIPTION 80, 82, 85 PACKAGE DIMENSIONS inch mm This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity
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31442349DD
3030bCH
VTS80
EG&G VTS-3080
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Untitled
Abstract: No abstract text available
Text: SbE D • BDSGbQ'ì 0 0 0 1 1 2 1 7ÔB ■ VCT VT0340S Rev. B SILICON PHOTODIODE J ^ E G zG VACTEC VTD34 OPTOELECTRONICS BPW 34 INDUSTRY EQUIVALENT E 6 8t G V A C T E C T-41-51 PRODUCT DESCRIPTION FEATURES • This P on N photodiode is designed to provide
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VT0340S
VTD34
T-41-51
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Untitled
Abstract: No abstract text available
Text: V TP 1 0 1 2 VTP Process Photodiodes CASE 17 PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window TO-46 package. Cath ode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.
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VTP1012
3030bCH
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Untitled
Abstract: No abstract text available
Text: VTL5C9, 5C10 Low Cost LED Axial Vactrols PACKAG E DIMENSIONS inch mm U L Listed Fils # 73887 DESCRIPTION VTL5C9 has a 112 db dynamic range, fast response time, high dark resistance, but with a more shallow slope and lower “on" resistance at low (1 mA) drive currents than the VTL5C1.
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VTL5C10
3030bCH
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Untitled
Abstract: No abstract text available
Text: VTR24F1 PS Rev. F ^ n • j| E G stG V A C T E C Æm LONG RANGE RETRO-REFLECTIVE SENSOR m VTR24F1 A N O P T O E L E C T R O N IC S G RO UP C O M P A N Y PRODUCT DESCRIPTION This retro-reflective sensor combines an infrared emitting diode and a unique photodarlington
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VTR24F1
VTR24F1
3030bCH
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Untitled
Abstract: No abstract text available
Text: Transmissive Optoswitch VTL11D1 - D7 Slotted Switch — .395 High PRODUCT DESCRIPTION This series of interrupter type transm issive optoswitches combines an infrared em itting diode IRED w ith an NPN phototransistor in a one piece, sealed, IR transm itting plastic case.
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VTL11D1
VTL13
VTL11D
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E73887
Abstract: VTL3B18
Text: VTL3B48 Low Cost Neon Axial Vactrols PACKAGE DIMENSIONS inch mm UL Listed File #E73887 Dual ‘center tap- element version is available tor VTL3B48. DESCRIPTION VTL3B48 features a low "on" resistance and fast turn-on time, with a smaller temperature coefficient of resistance and less light history
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VTL3B48
E73887
VTL3B48.
VTL3B48
VTL3B18.
3030bCH
00013b5
E73887
VTL3B18
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VTL3B49
Abstract: 3b49 MQ-5 VTL3B39 VTL3B19 vactrol VTL3B49/Vactec
Text: VTL3B39, 3B49 Low Cost Neon Axial Vactrols PACKAGE DIMENSIONS inch mm UL Listed File #E73B87 Dual ’center tap' element version is available tor VTL3B39 and VTL3B49. DESCRIPTION V T L 3 B 4 9 features a very low "on" resistance with a smaller temperature coefficient of resis
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VTL3B39,
E73B87
VTL3B39
VTL3B49.
VTL3B49
VTL3B19.
DissipB49
00013b7
3b49
MQ-5
VTL3B19
vactrol
VTL3B49/Vactec
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st 2902
Abstract: Vactec
Text: VTS VTS Process Photodiodes P R O D U C T D E SC R IP T IO N 81, 83, 84 P A C K A G E D IM E N SIO N S inch<mm This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic unbiased) mode. Their excellent speed and broadband sensitivity
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L00IS.
3030b
st 2902
Vactec
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Untitled
Abstract: No abstract text available
Text: VTS VTS Process Photodiodes PRODUCT DESCRIPTION 81, 83, 84 PA CKA G E DIM ENSIONS inch mm This series of planar, P o n N , large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity
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1090D
3030bCH
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ID12
Abstract: VTP9412
Text: VT P 9 4 1 2 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 Small area planar silicon photodiode in a recessed ceram ic package. Chip is coated w ith a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and
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VTP9412
ID-14
3030bCH
ID12
VTP9412
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VTL3B19
Abstract: VTL3B39 VTL3B49 K2130
Text: VTL3B39, 3B49 Low Cost Neon Axial Vactrols PACKAGE DIMENSIONS inch mm UL Listed File #E73B87 Dual ’center tap' element version is available tor VTL3B39 and VTL3B49. DESCRIPTION V T L 3 B 4 9 features a very low "on" resistance with a smaller temperature coefficient of resis
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VTL3B39,
E73B87
VTL3B39
VTL3B49.
VTL3B49
VTL3B19.
VTL3B49
00013b7
VTL3B19
K2130
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Untitled
Abstract: No abstract text available
Text: VTP8350 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 11 Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast
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VTP8350
Cto75Â
3030bCH
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