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Excelitas Technologies Corporation VTB1112BH Diode, Photo, SAR 330 to 720nm, Id 100pA, Isc 6uA, Voc 420mV, TO-46, Rs 0.25Gohm \| Excelitas Technologies Sensors VTB1112BH
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VTB1112B Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
VTB1112B		PerkinElmer Optoelectronics	Photodiode, PN Module, 0.1nA		Original	PDF
VTB1112B		EG&G	BLUE ENHANCED ULTRA HIGH DARK RESISTANCE		Scan	PDF
VTB1112B		EG&G Vactec	VTB Process Photodiodes		Scan	PDF
VTB1112BI		EG&G	BLUE ENHANCED ULTRA HIGH DARK RESISTANCE		Scan	PDF
VTB1112BI		EG&G Vactec	VTB Process Photodiodes		Scan	PDF

VTB1112B Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
VTB1113B Abstract: VTB1112B Text: VTB Process Photodiodes VTB1112B, 1113B PACKAGE DIMENSIONS inch mm CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. The package	Original	VTB1112B, 1113B VTB1112B VTB1113B VTB1113B VTB1112B	PDF
1113B Abstract: No abstract text available Text: VTB Process Photodiodes VTB1112B, 1113B PACKAGE DIMENSIONS inch mm CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. The package	Original	VTB1112B, 1113B VTB1112B VTB1113B 1113B	PDF
VTB1113BH Abstract: dual photodiode TO46 package Text: VTB Process Photodiode VTB1112BH, 1113BH PACKAGE DIMENSIONS inch mm CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. The package	Original	VTB1112BH, 1113BH VTB1112BH VTB1113BH VTB1113BH dual photodiode TO46 package	PDF
Untitled Abstract: No abstract text available Text: VTB Process Photodiode VTB1112BH, 1113BH PACKAGE DIMENSIONS inch mm CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. The package	Original	VTB1112BH, 1113BH VTB1112BH VTB1113BH	PDF
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383	PDF
VTB8440 Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B Text: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue	Original	VTB100 VTB9413B VTB8440 VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B	PDF
VTP1220FBH Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0	Original	2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H	PDF
VTB1112B Abstract: VTB1113B Text: VTB Process Photodiodes VTB 11 12B , 1113B PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 19 Small area planar silicon photodiode in a lensed, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high	OCR Scan	VTB1112B, 1113B 110CC VTB1112B VTB1113B 3030bCH VTB1112B VTB1113B	PDF
Untitled Abstract: No abstract text available Text: 5bE D • 303DbDci G0 010 34 455 H V C T VT B 1 1 1 2B I, 13BI VTB Process Photodiodes E G 8. G VACTEC PACKAGE DIMENSIONS PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead, TO-46 package. The package incorporates an infrared rejection filter. Chip is isolated from	OCR Scan	303DbDci VTB1113BI VTB1112BI	PDF
TB505 Abstract: No abstract text available Text: VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS PRODUCT DESCRIPTION FEATURES • • • • • This series of P on N silico n d iod es is primarily intended for use in the photovoltaic mode but may be used with a small reverse bias. The diod es have	OCR Scan	365nm, at220nm. VTS2011 VTS20â TB505	PDF
Untitled Abstract: No abstract text available Text: V T B 1 1 1 2 B , 1113B VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 19 TD-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) Small area planar silicon photodiode in a lensed, dual lead TO-46 package. The package Incorporates an infrared	OCR Scan	1113B TD-46 VTB1112B VTB1113B	PDF
5041J Abstract: photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B Text: This Material VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS Copyrighted P R O D U C T D ESC RIPTIO N FEATURES • Enhanced UV to IR spectral range. • Integral IR rejection filters available • No UV enhancement- By Its • Response @ 220 nm, 0.06 A/W, Typ with	OCR Scan	365nm, at220nm. 100mW/cm' 200mW/cmJ 5041J photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B	PDF
VTB1112BI Abstract: No abstract text available Text: S la E D 3G30bCH G001G34 VTB Process Photodiodes E G 8. G MSS H V C T VT B 11 12B I, 13BI 7 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) Small area planar silicon photodiode in	OCR Scan	G001G34 VTB1112BI, to-46 vtb1112bi vtb1113bi 2x1013 VTB1112BI	PDF