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    0001S2 Price and Stock

    JRH ELECTRONICS 770-001S208

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    DigiKey 770-001S208 Bulk 1
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    JRH ELECTRONICS 770-001S205

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    JRH ELECTRONICS 770-001S209

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    JRH ELECTRONICS 770-001S203

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    DigiKey 770-001S203 Bulk 1
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    JRH ELECTRONICS 770-001S207

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    DigiKey 770-001S207 Bulk 1
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    0001S2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HDB3 schematic

    Abstract: VL80C75-PC
    Text: V L S I TECHNOLOGY INC Ifl VLSI D e | =1300347 0001S2Q 0 ^ T - l S - i h V i Te c h n o l o g y , in c . VL80C75 T1 INTERFACE FEATURES DESCRIPTION • Supports T1, T1C, and CEPT data rates The VL80C75 is a general purpose PCM Line Interface circuit. It Is designed Ho


    OCR Scan     		0001S2Q VL80C75 VL80C75 HDB3 schematic VL80C75-PC PDF

    Untitled

    Abstract: No abstract text available
    Text: r Sa n k e n electric co ltd 55E D 7^0741 0001S2Ô SÛT H S A K J Silicon NPN Triple Diffused Planar Darlington Silicon PNP Epitaxial Planar Darlington •Maximum Ratings j iif :| S l i i l i i l l l f f 1 Ta = 25°C :ff§pm iljfiis PNP um. 1 C ollector-to-B ase Voltage


    OCR Scan     		0001S2Ã STA300 STA400 45max PDF

    28C16

    Abstract: AT28C16 AT28C16-15 AT28C16-20 AT28C16-25
    Text: ATMEL CORP 43E I> . r • B i 1074177 i r i 1 i 0GIBS22 Q ■ATM AT28C16 Features • • • • • • • • • • Fast Read Access Tim e-150ns Fast Byte Write - 200|iS o r 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer


    OCR Scan     		150ns 200ns AT28C16 Program/883 -35LM/883 Milltary/883C -45DM/883 28C16 AT28C16-15 AT28C16-20 AT28C16-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: * ADVANCE INFORMATION SY87951 SONET/SDH SERIAL TRANSCEIVER SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES Synergy's SY87951 is designed to provide high performance clock recovery and generation for either 51.84 Mbit/s OC/STS-1 or 155.52 Mbit/s OC/STS-3 SONET/SDH and ATM applications. The SY87951 is


    OCR Scan     		SY87951 SY87951 PM5345 VP67200 WAC-013-B 000152b Z28-1) PDF

    Untitled

    Abstract: No abstract text available
    Text: LOGIC mm DEVICES f lp « INC 40E » SSbSSOS Q MLDI Serial Scan Shadow Register DESCRIPTION FEATURES □ Octal Register with Additional 8-bit Shiftable Shadow Register □ Serial Load/V erify of Writable Control Store RAM □ Serial Stimulus/Observation of


    OCR Scan     		L29C818 L29C818 Am29818 L29C818. 28-pin 44-pin 08/05/91-LOS. RBP-01 08/05/91-LDS PDF

    T821S

    Abstract: din 41814 T821
    Text: T 821 S Elektrische Eigenschaften Electrical properties Höchstzulässige Werte M axim um rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Vorwärts-Stoßspitzensperrspannung Rückwärts-Stoßspitzensperrspannung Durchlaßstrom -G renzeffektivwert


    OCR Scan     		000152E T821S din 41814 T821 PDF

    DPZ128X32VTP

    Abstract: a13421
    Text: DENSE-PAC MICROSYSTEMS 4 Megabit 5V CMOS Flash EEPROM DPZ128X32VT/DPZ128X32VTP D E SC R IPT IO N : The DPZ128X32VT/VTP is a 4 megabit 5 Volt only C M O S Fla sh E E P R O M (E le c t r ic a lly In-System Programmable and Erasable R O M memory) module. The module is built with four 128Kx 8 FLASH memory


    OCR Scan     		DPZ128X32VT/DPZ128X32VTP DPZ128X32VT/VTP 128Kx DPZ128X32VT 512Kx 256Kx DPZ128X32VTVVTP 16or128Kx32 250ns DPZ128X32VTP a13421 PDF

    Skt 16 12c

    Abstract: SKT55-08C SKT100 SKT55 to209 SKT55/16C semikron skt 110 08 SKT55/12C SKT80 skt 55/08c
    Text: 1SE 0 I ai3bb71 QOGlSaS T | SEMIKRON INC SEMIKRON ^ r - 2 .5 - 1 7 V rsm V rrm V drm iV -d t/c i r Itrms maximum values for continuous operation 110A | 135 A | 175 A Itav ( >in. 180; Tease “ 8 D°C) 110 A 70 A 86 A V V V /|is 500 400 200 SKT 55/04 C SKT 80/04 C


    OCR Scan     		fll3bb71 SKT55/06 SKT80/06 SKT55/08 SKT100/16 B3-21 13bfa71 QQQ1S30 SKT55 SKT80 Skt 16 12c SKT55-08C SKT100 to209 SKT55/16C semikron skt 110 08 SKT55/12C skt 55/08c PDF

    Untitled

    Abstract: No abstract text available
    Text: NN511662 series EDO Hyper Page Mode CMOS 64K x 16bit Dynamic RAM N PN > a< DESCRIPTION The NN511662 series is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words by 16 bits. The NN511662 series is fabricated with advanced CMOS technology and designed with innovative design tech­


    OCR Scan     		NN511662 16bit NN511662L 00Q153fl NNS11662 NN511662XX PDF

    DIN 41814-155B4

    Abstract: t930
    Text: T 930 S Elektrische Eigenschaften Electrical properties H o c h s tz u lä s s ig e W e rte M a x im u m rated v a lu e s P e r io d is c h e V o rw ä rts- u n d R ü c k w ä rts -S p itz e n s p e rrs p a n n u n g V o rw ä rts -S to ßs p itz e n s p e rrs p a n n u n g


    OCR Scan     		tvj--40 0001S2L. DIN 41814-155B4 t930 PDF

    22B50

    Abstract: No abstract text available
    Text: ICS2572 Integrated Circuit Systems, Inc. U ser-Program m able Dual H igh-Perform ance Clock Generator Description Features The ICS2572 is a dual-PLL phase-locked loop clock gener­ ator with differential video outputs specifically designed for high-resolution, high-refresh rate, video applications. The


    OCR Scan     		ICS2572 ICS2572 phas90/2 ICS2572N-SXX ICS2572M-SXX 0QQ152h E-107 22B50 PDF

    HY514260

    Abstract: WRC-15 a08andoe
    Text: -HYUNDAI SEMICONDUCTOR H Y514260 Series 256Kx 16-blt CMOS DRAM with 2 CAS PRELIMINARY DESCRIPTION The HY514260 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		HY514260 256Kx 16-bft 16-bit 400mil 40pin 40/44pin 1AC11-00-APR93 WRC-15 a08andoe PDF

    APT6039BNR

    Abstract: No abstract text available
    Text: ADVANCED POWER Te c h n o l o g y O D APT6039BNR O s POWER MOS IV« 600V 17.0A 0.39SÌ AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd All Ratings: Tc = 25°C unless otherwise specified: Parameter APT6039BNR


    OCR Scan     		APT6039BNR O-247AD 0001S2? APT6039BNR PDF