varistor SKVA 20 B 550
Abstract: SKVA 20 B 250 v 20 k 275 varistor SKVC20A460 20B250 Semikron SKVC skva20b
Text: S E MI K R O N INC 3bE D • fll3bb71 □ Q G 2 clflD S M S E K C ZnO Varistors I D2 Ip1»3' W p1>3> max. repetitive max. A max. nonrepetitlve A V V V J SKVA14A42 SKVA14 A 60 42 60 55 80 68 100 150 150 2000 2000 7,9 11 SKVA20B130 SKVA 14 A 150 130 150 170
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fll3bb71
SKVA14A42
SKVA14
SKVA20B130
fll3bfci71
varistor SKVA 20 B 550
SKVA 20 B 250
v 20 k 275 varistor
SKVC20A460
20B250
Semikron SKVC
skva20b
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semikron SK 50 DB 100 D
Abstract: semikron SK 30 DB 100 D Semikron sk 50 dal
Text: fll3bb71 DDG37Rb Tb'i « S E K G S1E D s e M IK R O n SEMIKRON INC Maximum Ratings Values lc = 1 A, Vbe = - 2 V < CD VcBO Ie = 0 II I VcEV < VcEVsus ro Conditions m Symbol Units 1000 V 1000 V 1000 V V ebo lc = 0 7 V lc D. C. 50 A 100 A 50 A tp = 1 ms ICM If = —lc
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fll3bb71
DDG37Rb
T-33-35
B7-74
semikron SK 50 DB 100 D
semikron SK 30 DB 100 D
Semikron sk 50 dal
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tiristor
Abstract: diodo a7 diodo 105 skkt 19/12d Semikron sk 1 1200/18e semikron SKKT 162/12E
Text: SEHIKRON INC DbE D | fll3bb71 DOOllTE fl 7“- s r - ¿3 SEM IPACK Thyristor/Diode Modules SEM IPACK® Thyristor/Dioden-Module SEM IPACK® Modules a thyristors/diodes isolated metal bases. V^oi = 2500 V— V V A A SK K T 131/08D /12D.E /14E /16D, E 900 1300
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fll3bb71
131/08D
161/08D
tiristor
diodo a7
diodo 105
skkt 19/12d
Semikron sk 1 1200/18e
semikron SKKT 162/12E
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tiristores
Abstract: diodos 1200 RTV tiristor Semipack 1 skfh150 Semipack skfh 160M08 semikron SKFT 150 40F04 10DT
Text: SEHIKR0N INC D I fll3bb71 □ D D l l ci4 1 ¡ T f e ! a í - 2 -Í ' r~ i SEMIPACK Modules à thyristors/diodes rapides SEMIPACK® SchnelleThyristor/DiodenModule SEMIPACK® Fast Thyristor/Diode Modules isolated metal bases. ViS0| = 2500 V~ Types') All data apply to one
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l3bb71
/08CP
/10CP
/11CP
/12CP
/10DS;
/12DT
O-240AA
SKFT20.
CaseA11
tiristores
diodos
1200 RTV
tiristor
Semipack 1 skfh150
Semipack skfh
160M08
semikron SKFT 150
40F04
10DT
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B848
Abstract: b847 SKN40 W0024
Text: fll3bb71 OOOBÛôb TTG 5 IE D sem ikro n SEMIKRON INC Rectifier Diodes VrsM V rrm V 4000 A 50 °C 6000 A (85 °C) 100 SKN 4000/01 - 200 SKN 4000/02 SKN 6000/02 400 SKN 4000/04 SKN 6000/04 600 SKN 4000/06 - Ifav (sin. 18 Symbol Conditions Ifav Tease Ifsm
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13bti71
-106A2s
DSC11
13bb71
B848
b847
SKN40
W0024
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Untitled
Abstract: No abstract text available
Text: S1E D fll3bb71 DQG3ti2D m b se MIKRDN SEMIKRON INC Absolute Maximum Ratings Symbol V ds V dgr Id Idm V gs Pd ! Conditions1 Rgs = 20 k f l Tj, Tsig Visol AC, humidity climate D IN 1 min, 200 40 040 |iA D IN I E C 6 8 T . 1 Values Units 200 200 81 250 ±20
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fll3bb71
0003b23
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SK200D
Abstract: No abstract text available
Text: SIE D • fll3bb71 DÜ037b4 3 5 e! « S E K G s e MIKRDN s E n T K R Ô i^ ÎN < r Maximum Ratings Symbol Conditions VcEVsus lc 1200 V 1200 V 1200 V 7 V I < Vbe = - 2 V ro < II V ebo Units o VcBO o VcEV o ii UJ CD m II = 1 A, Values lc D. C. 200 A If = - l c
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fll3bb71
037b4
13bb71
0GG37bb
613bb71
0QD37b7
SK200D
A120D
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SK100
Abstract: npn SK100 Semikron sk 100 dal of SK100 SK100 DATA for Sk100 semikron SK 50 DB 100 D sk 51T S M B7100 NPN Power Darlington Modules
Text: fll3bb71 QGD3ÖEH bS3 SIE D se MIKR ün SEMIKRON INC Maximum Ratings Symbol Conditions VcEVsus Ic — 1 A, Vbe = - 2 V Values Units 1200 V 1200 V 1200 V 7 V Ic D. C. 100 A tp = 1 ms o VcBO o V ebo o m II II > CM I II LU CQ > VcEV 200 A If = —Ic 100 A Ib
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fll3bb71
Characteristics11
SK100
l3bb71
T-33-35
npn SK100
Semikron sk 100 dal
of SK100
SK100 DATA
for Sk100
semikron SK 50 DB 100 D
sk 51T
S M B7100
NPN Power Darlington Modules
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Untitled
Abstract: No abstract text available
Text: fll3bb71 G003b54 5ET S1E D SEMIKRON SEMIKRON INC Absolute Maximum Ratings Symbol Values . 101 D 121 D Conditions ' VcES lc R g e = 20 k n T case = 2 5 /8 0 ICM T case = 2 5 /8 0 VcGR per Visol AC, 1 min DIN 4 0 0 4 0 DIN IEC 6 8 1200 V 1000 1200 V °C °C
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fll3bb71
G003b54
fil3btj71
B6-94
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Untitled
Abstract: No abstract text available
Text: • fll3bb71 0Q05G55 Ô 54 SKiiP 292 G D L 170 - 472 WT Absolute Maximum Ratings Symbol Values Units 1700 1200 250 500 - 5 5 . . . + 150 3500 230 500 2160 23,4 V V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/jxs °C |Conditions 11 IGBT & Inve rse Diode V ces
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fll3bb71
0Q05G55
613bb71
QQ05Q01
0GQ50G3
00G5D04
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b847
Abstract: SKN40 106A2
Text: fll3bb71 OOOBÛôb TTG 5 IE D sem ikro n SEMIKRON INC Rectifier Diodes VrsM V rrm V 4000 A 50 °C 6000 A (85 °C) 100 SKN 4000/01 - 200 SKN 4000/02 SKN 6000/02 400 SKN 4000/04 SKN 6000/04 600 SKN 4000/06 - If av (sin. 18 Symbol Conditions Ifav Tease Ifsm
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13bti71
-106A2s
DSC11
13bb71
T-01-23
b847
SKN40
106A2
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tiristores
Abstract: skkt 40 12 SKKL91 semikron skkh SKKL SKKE15/06
Text: SEI1IKR0N INC DbE D | fll3bb71 □ODllflfi b | 7 "- O /- -K r-z-r-2.3 l M j> SEMIPACK Thyristor/Diode Modules SEMIPACK® Thyristor/Dioden-Bausteine SEMIPACK® Modules a thyristors/diodes isolated metal bases. ViS0i = 2500 V— jj ¡at V rsm A A SKKD 15/04
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fll3bb71
SKKH15
SKKH26.
SKKD15
SKKE15
SKKL56,
SKKL91
CaseA10
CaseA12
tiristores
skkt 40 12
SKKL91
semikron skkh
SKKL
SKKE15/06
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semikron SK 50 DB 100 D
Abstract: No abstract text available
Text: SIE D Ö13bb71 GÜG3ÖDD 11T S EM IK R O N SEMIKRON INC Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, Vbe = - 2 V Values > CM I II III m > VcEV Units 1200 V 1200 V V VCBO Ie = 0 1200 V ebo lc = 0 7 V lc D. C. 50 A tp = 1 ms 100 A D. C. 50 A ICM If = - l c
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13bb71
11iti;
fll3bb71
T-33-35
semikron SK 50 DB 100 D
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Untitled
Abstract: No abstract text available
Text: s e MIKROn V drm V rsm V rrm I r m s 1> Volw = 4 l/min, Tw = 40 °C, ED = 50 %, n = 10 V 1900 A 2400 A 1200 SKW 1200/12 SKW 1700/12 1400 SKW 1200/14 SKW 1700/14 1600 SKW 1200/16 SKW 1700/16 Symbol Conditions Irms1* Itsm Volw = 4 l/min, Tw = 40 °C, ED =100%
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fll3bh71
SKW1200
Gb053
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Untitled
Abstract: No abstract text available
Text: s e m ik r d n Section 10: High Voltage Rectifiers V rrm V BR VvRMS Types (f a v If a v If n Toil Tamb =45V =75*0 =45cC A A A VF N Rthja Tamb V V V V °C/W HSKE S K V Vè B 6 000 7 500 2 500 H S K E 2500/1100-0,3 8 000 10 000 3 500 H S K E 3500/1550-0,3 12 000 15 000 5 000 H S K E 5000/2200-0,25
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Untitled
Abstract: No abstract text available
Text: 51E 5 • Ôl3bb71 000377b 070 M S E K G seMIKRDN SEfäKRÖN- INC Maximum Ratings Symbol Conditions VcEVsus lc = 1 A , Vbe = - 2 V > CM I II UJ CD > VcBO Ie = lc Units 1200 V 1200 V 1200 V I VcEV Values 7 V lc D. C. 300 A If = - lc D. C. 300 A V ebo = Ib Ptot
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l3bb71
000377b
111iii!
fll3bb71
T-33-35
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Untitled
Abstract: No abstract text available
Text: SIE D • fllBbb71 0DG3S74 43b « S E K G s e MIKRD n SEMIKRÖN INC I Absolute Maximum Ratings Symbol V ds V dgr Id Id m V gs Pd Tji Tstg Visol humidity climate Conditions ' R g s = 20 k i l AC, 1 min, 200 |iA DIN 40 040 DIN IEC 68 T.1 Units ; Values 100 100
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fllBbb71
0DG3S74
111AR
SKM111
fll3bb71
DGQ357b
0QQ3577
T-39-15
B6-10
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Untitled
Abstract: No abstract text available
Text: s e m ik r d n Absolute Maximum Ratings Symbol Conditions • Values Units 600 V 2100 22 000 375 -5 5 + 150 A A2s °C °C °C V rrm Ifsm l2t Tsolder Tvj. Tstg Tvj.Tstg SEMICELL CAL - Diode Chips3 SKCD 121C 0 6 0 1 > 10 bondwires 300 )xm 0 ) tp = 10 ms; sin; T j = 150 °C
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GBCD061
C/125
fll3bb71
0GGb722
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Untitled
Abstract: No abstract text available
Text: se MIKRDn Absolute Maximum Ratings V a lu e s Units Symbol C onditions 1 VcES VcGR lc IcM Vges Rge = 20 k ii Tease = 25/80 °C Tease = 25/80 °C¡ tp = 1 ms 1700 1700 7 5 /5 0 144/100 ±20 per IGBT, Tease = 25 °C AC, 1 min. DIN 4 0 040 DIN IEC 68T .1 500
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fll3bb71
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SKNA4
Abstract: No abstract text available
Text: se MIKROn V rsm Rectifier Diodes Ifrm s maximum values for continuous operation V rrm 5A 10 A V 2,5 A 5A | SKN 2,5 SKN5 Ifa v (sin. 180; Tamb —45 °C) 200 - SKN 5/02 400 SKN 2,5/04 SKN 5/04 800 SKN 2,5/08 SKN 5/08 1200 SKN 2,5/12 SKN 5/12 1600 SKN 2,5/16
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fll3bb71
00Gb310
SKNA4
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Untitled
Abstract: No abstract text available
Text: SEMIKRDN V rsM V rrm V drm V -dt ÌJcr Ithms (maximum values for continuous operation 3000 A I 5000 A Itav (sin. 180; T case — . . . ; D SC) 1500 A (55 °C) 2450 A (55 °C) V V 2300 2200 1000 2700 2600 1000 SKT 1400/26 E SKT 2000/26 E 2900 2800 1000 SKT 1400/28 E
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fll3bb71
B3-59
fll3bb71
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Untitled
Abstract: No abstract text available
Text: s e M IK R O n Absolute Maximum Ratings Symbol Conditions ' Values Units 50 V 50 V V ds V dgr Res = 2 0 kQ Tease = 5 5 °C 200 A I dm 600 A V gs ±20 V Id Pd Tj, Tstg Visol A C , 1 min humidity climate D IN 4 0 0 4 0 400 W - 5 5 . . .+ 1 5 0 °C V 2 500 SEMITRANS M
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fll3bb71
B5-33
M204A
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Untitled
Abstract: No abstract text available
Text: s e MIKROn V drm Vrsm V rrm Irms1 Volw = 4 l/min., Tw = 40 °C, ED = 50 %, n = 10) V 850 A 1200 A 1200 SKIW 700/12 SKIW 900/12 1400 SKIW 700/14 SKIW 900/14 1600 SKIW 700/16 SKIW 900/16 Symbol Conditions Ir m s 1) It s m ft SKIW 700 II Vt Tvj = 25 °C; V t (t o )
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semikron skiip 10 nec
Abstract: No abstract text available
Text: SEMIKRON SKiiP 10 NEC 06 - SKiiP 10 NEC 06 I Absolute Maximum Ratings Conditions 1> Symbol Inverter V ces Vges Theatsink = 25 / 80 °C lc tp < 1 ms, T heatsink —25 / 80 C Icm T h eatsink = 25 / 80 °C If = -lc Ifm = - I cm tp < 1 ms, T h eatsink = 25 / 80 °C
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Ai3bfc71
fll3bb71
DDM32Ã
semikron skiip 10 nec
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