0004B31 Search Results

BEL 100N TRANSISTOR PIN DIAGRAM

Abstract: AMD 586 embedded BEL 100N TRANSISTOR 111S3 BEL 100N EPE6047S 80C25 80C26 PT4152 transistor 5bt
Contextual Info: 80C26 SEEQ CMOS EtflBfflGt T e c h n o lo g y , In c o r p o r a te d Interface Adapter in 28L Package P R E LIM IN A R Y O ctober 1994 SEEQ AutoDUPLEX Designation S y m b o l » id e n tifie s p ro d u c t a s A u to D U P L E X d e v ic e • P rovides A u to D U P L E X TU D etect F u nction fo r F u ll

Contextual Info: 1. SCOPE This specification provide the' ratings and the requirements for high voltage silicon diode ESJA82-14A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.

Contextual Info: X X28HC256 256K p r 32K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * Access Time: 70ns * Simple Byte and Page Write — Single 5V Supply — No External High Voltages or V p p Control

Contextual Info: Lattice ispLSr and pLSI‘ 2032LV Semiconductor ! : ; Corporation 3.3V High Density Programmable Logic Features Functional Block Diagram • 3.3V LOW VOLTAGE 2032 ARCHITECTURE — Interfaces With Standard 5V TTL Devices — 60 mA Typical Active Current — Fuse Map Compatible with 5V ispLSI/pLSI 2032

Contextual Info: S ta n d a r d P r o d u c t PMC I PMC-Sierra, Inc. I / 1 ^ * ISSUE 4 P M 8313D 3M X M13 MULTIPLEXER FEATURES • Integrates a full featured M13 multiplexer and DS-3 framer in a single monolithic device. • Supports the M23 or C-bit parity DS3 formats. • Supports the M12 or G.747 formats allowing DS1 or E1 signals to be multiplexed

3113U

Abstract: 50g k hall ugn 3113u HALL SENSOR ST200G Hall Effect 03E UGN3113 UGN3113U
Contextual Info: S PR AG UE/ SEM I CON D GROUP 03E; 8 5 1 4 0 1 9 S P R A G U E / S E M I C O N D S / ICS » _ • 5513650 D0 0 Mb3 D 7 ■ ~ 03E 04 63 0 D UGN-3113T AND UGN-3113U SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES U G N -3113T AND U G N -3113U HALL EFFECT SWITCHES