Untitled
Abstract: No abstract text available
Text: S−AU68L TOSHIBA RF POWER AMPLIFIER MODULE S−AU68L UHF BAND FM POWER AMPLIFIER MODULE Unit in mm MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VDD 17 V DC Supply Voltage VGG 6 V Input Power Pi 50 mW Output Power Po 12
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AU68L
000707EAA1
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Untitled
Abstract: No abstract text available
Text: CMS11 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS11 Switching Mode Power Supply Applications Portable Equipment Battery Applications • • • • Forward voltage: VFM = 0.37 V max Average forward current: IF (AV) = 3.0 A Repetitive peak reverse voltage: VRRM = 30 V
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CMS11
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marking FB
Abstract: JDV2S02E
Text: JDV2S02E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02E VCO for UHF band • Small Package • High Capacitance Ratio : C1V/C4V = 2.0 typ. • Low Series Resistance : rs = 0.60 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit
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JDV2S02E
000707EAA1
marking FB
JDV2S02E
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JDV2S05E
Abstract: No abstract text available
Text: JDV2S05E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05E VCO for UHF band • Small Package • High Capacitance Ratio : C1V/C4V = 1.9 typ. • Low Series Resistance : rs = 0.30 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit
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JDV2S05E
000707EAA1
JDV2S05E
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NPN 2SC2782
Abstract: transistor 2sc2782 2SC2782
Text: 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage
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2SC2782
175MHz,
2-13C1A
000707EAA1
175MHz
NPN 2SC2782
transistor 2sc2782
2SC2782
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TORX173
Abstract: OPTIC TRANSMITTING MODULE DIGITAL AUDIO Toshiba TORX173
Text: TORX173 FIBER OPTIC RECEIVING MODULE TORX173 FIBER OPTIC RECEIVING MODULE FOR DIGITAL AUDIO EQUIPMENT Unit: mm Conform to EIAJ Standard CP−1201 For Digital Audio Interfaces including Fiber Optic inter−connections . TTL Interface ATC (Automatic Threshold Control) Circuit
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ORX173
CP-1201
TORX173
OPTIC TRANSMITTING MODULE DIGITAL AUDIO
Toshiba TORX173
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TOSHIBA RF Power Module
Abstract: No abstract text available
Text: S−AU68M TOSHIBA RF POWER AMPLIFIER MODULE S−AU68M UHF BAND FM POWER AMPLIFIER MODULE Unit in mm MAXIMUM RATINGS Tc=25°C CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VDD 17 V DC Supply Voltage VGG 6 V Input Power Pi 50 mW Output Power Po 12 W
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S-AU68M
5-23E
000707EAA1
TOSHIBA RF Power Module
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RN4902FE
Abstract: No abstract text available
Text: RN4902FE TOSHIBA Transistor Silicon PNP•NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4902FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)
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RN4902FE
000707EAA1
RN4902FE
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TOSHIBA IGBT DATA BOOK
Abstract: GT25Q102 GT25Q301
Text: GT25Q102 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q102 High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.32 µs max • Low Saturation Voltage: VCE (sat) = 2.7 V (max)
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GT25Q102
000707EAA1
TOSHIBA IGBT DATA BOOK
GT25Q102
GT25Q301
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2SK3074
Abstract: all mosfet vhf power amplifier transistor marking zg
Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Output Power : PO ≥ 630mW Power Gain : GP ≥ 14.9dB Drain Efficiency : ηD ≥ 45% Unit in mm MAXIMUM RATINGS Ta = 25°C
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2SK3074
630mW
SC-62
000707EAA1
520MHz,
2SK3074
all mosfet vhf power amplifier
transistor marking zg
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JDV2S14E
Abstract: No abstract text available
Text: JDV2S14E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S14E Useful for VCO/TCXO • Small Package • High Capacitance Ratio : C1V/C2.5V = 2.15 typ. • Low Series Resistance : rs = 0.4 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating
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JDV2S14E
000707EAA1
JDV2S14E
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RN1102F
Abstract: RN2102F RN47A3
Text: RN47A3 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A3 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package.
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RN47A3
RN1102F
RN2102F
RN1102F
RN2102F
RN47A3
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RN4987FE
Abstract: No abstract text available
Text: RN4987FE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4987FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)
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RN4987FE
000707EAA1
RN4987FE
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RN4983FE
Abstract: No abstract text available
Text: RN4983FE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4983FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)
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RN4983FE
000707EAA1
RN4983FE
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Untitled
Abstract: No abstract text available
Text: 16DL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 16DL2C41A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM=200V Average Output Rectified Current : IO=16A Unit in mm Ultra Fast Reverse−Recovery Time : trr=35ns (Max.)
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16DL2C41A
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K 192 A transistor
Abstract: RN1967FE RN1968FE RN1969FE RN2967FE RN2969FE
Text: RN1967FE~RN1969FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967FE, RN1968FE, RN1969FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)
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RN1967FE
RN1969FE
RN1967FE,
RN1968FE,
RN2967FE
RN2969FE
RN1968FE
RN1967FE
K 192 A transistor
RN1968FE
RN1969FE
RN2969FE
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RN1103F
Abstract: RN2103F RN47A2
Text: RN47A2 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A2 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package.
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RN47A2
RN1103F
RN2103F
RN1103F
RN2103F
RN47A2
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RN2971FE
Abstract: RN1970FE RN1971FE RN2970FE
Text: RN1970FE,RN1971FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1970FE, RN1971FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)
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RN1970FE
RN1971FE
RN1970FE,
RN2970FE,
RN2971FE
RN1970FE
RN2971FE
RN1971FE
RN2970FE
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SSM6N09FU
Abstract: No abstract text available
Text: SSM6N09FU Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications • Small package • Low Drain-Source ON resistance. : Ron = 0.7 Ω max (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V) Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
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SSM6N09FU
SSM6N09FU
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RN4985FE
Abstract: No abstract text available
Text: RN4985FE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4985FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)
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RN4985FE
000707EAA1
RN4985FE
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Untitled
Abstract: No abstract text available
Text: TO SH IBA MT6L59E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L59E V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : ES6 y m i M T c n n c x / ir c c
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MT6L59E
MT3S06S
MT3S06T)
MT3S07S
MT3S07T)
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Untitled
Abstract: No abstract text available
Text: 2SJ167 TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPPED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 67 ANALOG SWITCH APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Time t0n - 14 ns Typ. High Forward Transfer Admittance |Yfs| = lOOmS (Min.)
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2SJ167
2SK1061
000707EAA1
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Untitled
Abstract: No abstract text available
Text: TO SH IBA MT3S03AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AU V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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MT3S03AU
000707EAA1
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Untitled
Abstract: No abstract text available
Text: TO SH IBA HN4K03JU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HN4K03JU Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS High Input Impedance Low Gate Threshold Voltage : V^h = 0.5—1.5 V Excellent Switching Times Small Package
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HN4K03JU
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