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    MPSA10

    Abstract: MPS-a10 MPSA25 625MW transistor k 620 2929 transistor QS 100 NPN Transistor T-29-29 MPSA12 MPSA14
    Text: SAMS UN G SEMICONDUCTOR INC MPSA10 14E 0 | 7«lb4iq2 00073Mb S | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emltter Voltage: V c e o = 4 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


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    PDF 000734b MPSA10 T-29-21 625mW 100/iA, lc-10mA, lc-100mA, MPSA25 MPS-a10 MPSA25 625MW transistor k 620 2929 transistor QS 100 NPN Transistor T-29-29 MPSA12 MPSA14

    IC dc 4047

    Abstract: transistor C4047 C4047 2SA1563 da 2030a 2SA563 2SA15 2SC4047 IC 4047 inverter
    Text: 2EE T> SANYO SEMICONDUCTOR CORP 2SA1563, 2SC4047 ?tn ? 0 7 b 00073Mb fi T-37-/3 T-3S-/1 m PN P/N PN Epitaxial Planar Silicon Transistors 2018a Switching Applications with Bias Resistances R1=10kQ, R2=47kO 2330 Applications , Switching circuit, inverter circuit, interface circuit, driver circuit


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    PDF 000734b 2SA1563, 2SC4047 T-31-Ã 47ki2) 10kohms, 47kohms) 2SA1563 IC dc 4047 transistor C4047 C4047 da 2030a 2SA563 2SA15 2SC4047 IC 4047 inverter