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    MPSA12 Price and Stock

    Rochester Electronics LLC MPSA12

    TRANS NPN DARL 20V TO92
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    DigiKey MPSA12 Bulk 20,750 6,662
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    onsemi MPSA12

    TRANS NPN DARL 20V TO92
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    Avnet Americas MPSA12 Bulk 4 Weeks 8,013
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    onsemi MPSA12G

    TRANS NPN DARL 20V TO92
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    onsemi MPSA12RLRA

    TRANS NPN DARL 20V TO92
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    DigiKey MPSA12RLRA Reel 18,000
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    onsemi MPSA12RLRP

    TRANS NPN DARL 20V TO92
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    DigiKey MPSA12RLRP Ammo Pack
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    MPSA12 Datasheets (49)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MPSA12 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    MPSA12 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    MPSA12 Micro Commercial Components TRANS DARLINGTON BJT NPN 20V 1.2A 3TO-92 Original PDF
    MPSA12 On Semiconductor NPN Darlington Transistor Original PDF
    MPSA12 Zetex Semiconductors TRANS DARLINGTON NPN 100V 1A 3TO-92 Original PDF
    MPS-A12 Central Semiconductor SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY) Scan PDF
    MPSA12 Crimson Semiconductor Transistor Selection Guide Scan PDF
    MPSA12 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    MPSA12 Fairchild Semiconductor NPN Darlington Transistor Scan PDF
    MPSA12 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    MPSA12 Fairchild Semiconductor NPN monolithic darlington amplifier. Scan PDF
    MPSA12 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    MPSA12 Ferranti Semiconductors E-Line Transistors 1977 Scan PDF
    MPS-A12 Ferranti Semiconductors NPN Silicon Darlington Transistors Scan PDF
    MPSA12 General Electric Semiconductor Data Handbook 1977 Scan PDF
    MPS-A12 General Electric Semiconductor Data Handbook 1977 Scan PDF
    MPS-A12 General Electric Planar passivated epitaxial NPN silicon Darlington transistor. 20V, 500mA. Scan PDF
    MPSA12 Micro Electronics Semiconductor Device Data Book Scan PDF
    MPSA12 Micro Electronics NPN SILICON DARLINGTON TRANSISTOR Scan PDF
    MPSA12 Motorola European Master Selection Guide 1986 Scan PDF

    MPSA12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Darlington transistor to 92

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MPSA12 Features • This device is designed for applications requiring extremely high current gain at current to 1.0A


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    PDF MPSA12 Darlington transistor to 92

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MPSA12 Features • This device is designed for applications requiring extremely high current gain at current to 1.0A Pin Configuration Bottom View


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    PDF MPSA12 10mAdc, 300us,

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use FMMTA14 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR MPSA12 ISSUE 2 – SEPT 93 FEATURES * 1 Watt power dissipation * 1 Amp continuous current * Minimum gain =8K at 250mA C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.


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    PDF FMMTA14 250mA MPSA12 250mA, 100mA, 20MHz

    MPSA12

    Abstract: No abstract text available
    Text: MPSA12 MPSA12 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * TA=25°C unless otherwise noted


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    PDF MPSA12 MPSA14 MPSA12

    CTO-92

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use FMMTA14 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR MPSA12P ISSUE 2 – NOV 93 E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Emitter Voltage V CES VALUE UNIT 20 V Emitter-Base Voltage V EBO


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    PDF FMMTA14 MPSA12P CTO-92

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Darlington Transistors Part No. 2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64 MPSA65 20070515 Polarity NPN PNP VCEO hFE @ VCE & IC IC V (A) 20 30 30 40 20 30 30 30 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Min. Max. 7K 2K 7K 20K 20K


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    PDF 2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64

    NPN Transistor TO92

    Abstract: npn darlington TO92 MPSA12P CTO-92
    Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR MPSA12P ISSUE 2 – NOV 93 E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Emitter Voltage V CES VALUE UNIT 20 V Emitter-Base Voltage V EBO 10 V Continuous Collector Current IC 500 mA Power Dissipation at T amb=25°C


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    PDF MPSA12P NPN Transistor TO92 npn darlington TO92 MPSA12P CTO-92

    MPSA12

    Abstract: equivalent mpsa14 MPSA14
    Text: MPSA12 MPSA12 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * TA=25°C unless otherwise noted


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    PDF MPSA12 MPSA14 MPSA12 equivalent mpsa14

    Untitled

    Abstract: No abstract text available
    Text: MPSA12 Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 20 Vdc Emitter Base Voltage VEBO 10 Vdc PD 625 5.0 mW mW/°C TJ, Tstg


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    PDF MPSA12 MPSA12/D

    MPSA12

    Abstract: MPSA14
    Text: MPSA12 MPSA12 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * TA=25°C unless otherwise noted


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    PDF MPSA12 MPSA14 MPSA12

    mps a12

    Abstract: mpsa12
    Text: MPSA12 Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 20 Vdc Emitter Base Voltage VEBO 10 Vdc PD 625 5.0 mW mW/°C TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient


    Original
    PDF MPSA12 MPSA13/D mps a12

    MPSA12

    Abstract: MPSA12RLRA MPSA12RLRP MPSA12RLRPG mps a12 Marking code mps
    Text: MPSA12 Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 20 Vdc Emitter Base Voltage VEBO 10 Vdc PD 625 5.0 mW mW/°C TJ, Tstg


    Original
    PDF MPSA12 MPSA12/D MPSA12 MPSA12RLRA MPSA12RLRP MPSA12RLRPG mps a12 Marking code mps

    2N4123 pnp silicon

    Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50


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    PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 2N4123 pnp silicon 2N4401 520

    b20100

    Abstract: MPSA12
    Text: S E M IC O N D U C T O R MPSA12 NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol


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    PDF MPSA12 PSA14 b20100 MPSA12

    MPSA13

    Abstract: MPSA12 MPSA14 mpsa13 central
    Text: Datasheet J • TM P a h 1 W C EITFO 1 Semiconductor Corp. MPSA12 MPSA13 MPSA14 NPN SILICON DARLINGTON TRANSISTOR JEDEC T0-92 CASE EBC 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors


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    PDF MPSA12 MPSA13 MPSA14 T0-92 MPSA12 MPSA14 MPSA13 mpsa13 central

    FPQ3725

    Abstract: 2n999 FPQ3724 FPQ-3724
    Text: TRANSISTORS— MULTIPLE TRANSISTORS NPN DARLINGTON AMPLIFIER TRANSISTORS NUMERIC LISTING METAL AND PLASTIC PACKAGE V CEO VOLTS TYPE MHz ^ob pF MIN MAX h FE hFE MIN - MAX MIN @ •c mA PD V 2 5 "c mW Package 310 TO-92 MPSA12 20 20000 @ 10 MPSA13 30 5000 @


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    PDF MPSA12 MPSA13 MPSA14 2N997 2N998 2N999 2N2723 2N2724 2N2725 FPQ3724 FPQ3725 FPQ3724 FPQ-3724

    mpsa65

    Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P AC KAG E VCE sat 1F E b v ceo Device Type @ 10mA-(V) Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30


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    PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 mpsa65 MPSA20

    n3904

    Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
    Text: SILICON SIGNAL TRANSISTORS G EN ERAL PURPOSE A M PLIFIERS TO-92 PACKAGE Device bvceo Type @ 10mA- V Min. Max. @ lc (mA) G ES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50


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    PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20n) -300mA, n3904 MPSA20

    GES5819

    Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. VCE(sat) 1F E Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30


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    PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20S6535 100mA) MPSA20 MPSA55

    GES5819

    Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) G ES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50


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    PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPS6534 MPSA20 MPSA55

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR MPSA12 ISSUE 2 - SEPT 93_ FEATU RES * 1 Watt power dissipation * 1 Am p continuous current * Minimum gain =8K at 250mA ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL VALUE UNIT


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    PDF 250mA MPSA12 250mA, 100mA, 20MHz 300us.

    Untitled

    Abstract: No abstract text available
    Text: Discrete POWER & Signal Technologies F = A l R O H I L .D SEM ICONDUCTOR MPSA12 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.


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    PDF MPSA12 MPSA14

    MPS6531

    Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50 20,000 10,000


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    PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA206531, MPS6532 MPS6531 MPSA20

    MP5A12

    Abstract: MPSA12
    Text: S; t r .; • v"; '" ÿ-!:"; Ü ' v " i'” S' -vá-'.'." MPSA12 » ~ í ,.* f , . 4 i f i 0j% lE C NPN S IL IC O N V The M PSA12 i s d e s ig n e d r e q u ir in g fo r NPN s i l i c o n p r e a m p lif ie r in p u t im p e d a n ce l i d a r lin g t o n


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    PDF MPSA12 MP5A12 500mA Boxi9477,