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50LD Abstract: sn 1699 Text: SAHSUNG ELECTRONICS INC [Jj HARRIS bOE D • ? 1 b m M 2 0011SM3 SSI H M F -12100 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features * 8.5 dB Gain MSG with + 22 dBm Associated Output power at 18 GHz • Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability	OCR Scan	PDF	0011SM3 HMF-1219 50LD sn 1699

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50LD

Abstract: sn 1699
Text: SAHSUNG ELECTRONICS INC [Jj HARRIS bOE D • ? 1 b m M 2 0011SM3 SSI H M F -12100 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features * 8.5 dB Gain MSG with + 22 dBm Associated Output power at 18 GHz • Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability

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0011SM3 HMF-1219 50LD sn 1699