001S1DS Search Results

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Text: J amer philips /discrete ObE D • 001S1DS 1 bhS3T31 y PTB32001X PTB32003X PTB32005X v i T T - 3 3 - o '? MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide