BHS3T31 Search Results

Contextual Info: • BCW31 BCW32 BCW33 bhS3T31 0Q245b7 114 « A P X N AUER PHILIPS/DISCRETE b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended for low level general purpose applications in thick and thin-film circuits.

Contextual Info: Philips S em iconductors bhS3T31 0031b53 437 M l APX Product specification NPN 4 GHz wideband transistor BFQ68 N AMER PHILIPS/DISCRETE bTE » PINNING DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud.

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D • bhS3T31 QD2fllDfl 311 P h ilip s S e m ic o n d u c to rs 2N2894A D a ta sheet statu s Preliminary specification d a te o f issue December 1990 Silicon switching transistor QUICK REFERENCE DATA PARAMETER SYMBOL MIN. CONDITIONS

M2808

Abstract: BYV32F BYV32F-50 diodes b
Contextual Info: SSE D N AHER PHI LIPS/DISCRETE • bhS3T31 QDS5Sb3 □ ■ BYV32F SERIES jr ; 0 3 -/7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficien cy e p itax ial do ub le rec tifie r diodes in S O T -1 8 6 fu ll-p a c k plastic

Contextual Info: N AUER PHILIPS/DISCRETE 55E D • bhS3T31 QQlbaQ? 3 ■ Power Devices BREAKOVER DIODES TYPE NO. PACKAGE OUTLINE BREAKOVER VOLTAGE ±12% . TRANSIENT ' PEAK CURRENT HOLDING CURRENT It r m 8/20/rS | 10/700/rS itt 25°C SWITCHING CURRENT la 25°C dv/dt i ON-STATE

BST124

Abstract: depletion mode
Contextual Info: bhS3T31 Philips Semiconductors 0023=103 I APX 6T3 Product specification N-channel depletion mode vertical D-MOS transistors BST124 N AMER PHILIPS/DISCRETE b?E ]> QUICK REFERENCE DATA FEATURES • High-speed switching SYMBOL • No secondary breakdown. VDs

Contextual Info: Philips Semiconductors bhS3T31 D D 32 34 S flTb H A P X Pf0ductspecification BGX881 C A T V am plifier m odule N AMER PHILIPS/DISCRETE PIN CONFIGURATION PINNING-SOT115D FEATURES PIN • Excellent linearity DESCRIPTION • Extremely low noise 1 input note 1

M2344

Abstract: BYV32F BYV32F-50 m2809
Contextual Info: SSE D N AUER PHILIPS/DISCRETE • bhS3T31 QGE5Sb3 Q ■ BYV32F SERIES T-03-/7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low forward voltage drop, very fast reverse recovery times and soft-recovery

Contextual Info: 1-1 N AMER PHILIPS/DISCRETE DhE D • bhS3T31 DQ1S247 T ■ RZ2833B30W MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.

TRANSISTOR D196

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bhS3T31 0026744 flMfl M A P X . ' k j > jciiin;uiiuu cio specm cauon UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile

Contextual Info: J amer philips /discrete ObE D • 001S1DS 1 bhS3T31 y PTB32001X PTB32003X PTB32005X v i T T - 3 3 - o '? MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

Contextual Info: bhS3T31 0023=163 6T3 W A P X Philips Semiconductors Product specification N-channel depletion mode vertical D-MOS transistors BST124 N AMER PHILIPS/DISCRETE b?E J> QUICK REFERENCE DATA FEATURES • High-speed switching SYMBOL • No secondary breakdown. VDs

Contextual Info: bhS3T31 0033755 077 APX Philips Semiconductors Product specification N AUER PHILIPS/DISCRETE b7E D N-channel silicon field-effect BSJ108; BSJ109; BSJ110 transistors FEATURES QUICK REFERENCE DATA • High-speed switching SYMBOL • Interchangeability of drain and

BLX79

Abstract: BZ 6V2 BZX79 bzx79 2v7 A4v34 C3V0
Contextual Info: N AflER P H I L I P S / D I S C R E T E kiTE D • bhS3T31 GGEbfiDb 0 3 0 H A P X B Z X 7 9 SERIES VOLTAGE REGULATOR DIODES Silicon planar diodes in DO-35 envelopes intended for use as low voltage stabilizers or voltage references. They are available in four series; each series having a different tolerance rating, one series

MRB12350YR

Abstract: IEC134 MRB11350Y 67A MARKING
Contextual Info: A N AMER PHILIPS/DISCRETE m bhS3T31 00150bl 7 • OLE D MRB12350YR MAINTENANCE TYPE for new design use MRB11350Y X ' 33 - I S' PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in

RTC146

Abstract: IEC134 LKE21004R LTE21009R
Contextual Info: N AMER GbE P H ILIP S /D IS C R E TE D • I bhS3T31 D014141 MAINTENANCE TYPE for new design use LTE21009R T ■ LKE21004R T - iz - o ± r MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz.

Contextual Info: JLL bbS3T31 D0114D7 fl OLE D N AUER PH ILI PS/ DIS CRET E BYV43F SERIES T—03—19 SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes, featuring very low forward voltage drop, low capacitance and absence of stored charge. Their electrical

RX1214B150W

Contextual Info: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C

Contextual Info: ii N AMER PHILIPS/DISCRETE 5SE D • bbS3T3i Qaaasa? i ■ I BYV29F SERIES _ J V 7 ^ 0 2 -1 7 ULTRA FAST-RECOVERY ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in full-pack envelopes, featuring low forward

Contextual Info: 35E D I I bb53T31 ODaEabT □ • BR216 N AMER PHILIPS/DISCRETE tte - o s r DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the TO-220AB outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a

BUZ10

Contextual Info: N AUER PHILIPS/DISCRETE OLE D • PowerMOS transistor bb53T31 0014331 1 ■ BUZ10 r~ 1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BYP22

Abstract: BYP22-50 M2448
Contextual Info: N AMER PHILIPS/DISCRETE 25E D • 1^53=131 0Q2E375 T ■ BYP22 SERIES 7 ^ 0 3 - /9 ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring lo w reverse

transistor fp 1016

Abstract: Lc 0427 17-25 sot89 BFQ18A Philips FA 291
Contextual Info: bbS3'i31 0025050 STM P h ilip s S e m ic o n d u c to rs IAPX P ro d u c t s p e c ific a tio n NPN 4 GHz wideband transistor BFQ18A N AMER PHI LIP S/DISCRETE DESCRIPTION b?E D PINNING NPN transistor in a plastic SOT89 envelope intended for application in

TCA 321

Abstract: BGV584A BGY584A BGY585A DIN45004B philips hybrid amplifier modules
Contextual Info: b b S 3 *1 3 1 Philips Semiconductors 321 CATV amplifier modules U APX Product specification BGY584A; BGY585A N AMER PHILIPS/DISCRETE P IN N IN G -S O T 1 1 5 C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input