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    LTE21009R Search Results

    LTE21009R Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LTE21009R Advanced Semiconductor Transistor Original PDF
    LTE21009R Philips Semiconductors NPN Microwave Power Transistor Original PDF
    LTE21009R Philips Semiconductors Microwave Linear Power Transistor Original PDF
    LTE21009R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    LTE21009R Philips Semiconductors Microwave Linear Power Transistor Scan PDF
    LTE21009RA Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    LTE21009RA Philips Semiconductors Microwave Linear Power Transistor Scan PDF
    LTE21009RTRAY Philips Semiconductors TRANS GP BJT NPN 16V 0.25A 3SOT440A Original PDF

    LTE21009R Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: • □ t>E D N AUER P H IL IP S /D IS C R E T E MAINTENANCE TYPE ■ t.b 5 3 i3 ]> ■ OOlMTSS ■ LKE1004R for new design use LTE21009R T - 3 3 - OS" MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor fo r use in a common-emitter class-A linear power amplifier up to 1 GHz.


    OCR Scan     		LKE1004R LTE21009R) PDF

    LTE21009R

    Abstract: No abstract text available
    Text: LTE21009R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI LTE21009R is Designed for Class A, Common Emitter Applications up to 2.5 GHz. PACKAGE STYLE .250 2L FLG FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 250 mA


    Original     		LTE21009R LTE21009R PDF

    Untitled

    Abstract: No abstract text available
    Text: LTE21009R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI LTE21009R is Designed for Class A, Common Emitter Applications up to 2.5 GHz. FEATURES INCLUDE: PACKAGE STYLE .250 2L FLG • Gold Metalization • Emitter Ballasting Dim: A B C D E MAXIMUM RATINGS


    Original     		LTE21009R LTE21009R PDF

    lte2

    Abstract: 0261 230 154 LTE21009R LTE21015R
    Text: DEVELOPMENT DATA | • T his data sheet contains advance Inform ation and specifications are subject to change w ithout notice. - bbSBT31 0 0 1 ^ 5 7 3 ■ LTE21009R LTE21015R Jl N AMER P H I L I P S / D I S C R E T E ObE D -


    OCR Scan     		LTE21009R LTE21015R FO-41B) lte2 0261 230 154 LTE21009R LTE21015R PDF

    Untitled

    Abstract: No abstract text available
    Text: TTamer philips /discrete □ bE D bb53^31 □014T41 T M A IN TEN A N C E TYPE LKE21004R J for new design use LTE21009R MICROW AVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich


    OCR Scan     		014T41 LKE21004R LTE21009R) PDF

    LTE21009R

    Abstract: SC15
    Text: Philips Semiconductors Product specification NPN microwave power transistor LTE21009R FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors PIN • Self-aligned process entirely ion implanted and gold sandwich metallization • optimum temperature profile


    OCR Scan     		LTE21009R OT440A OT440A. LTE21009R SC15 PDF

    A83A marking

    Abstract: 113A db 435A 95A 640 marking 113a LTE21009R LTE21009RA transistor 81 110 w 85 MARKING 41B marking code 41b
    Text: -7^33-0^ LTE21009R LT E 21009R A ,{ PHILIPS INTERNATIONAL StE D • 7110fi2b 0041,218 Rbfl ■ PHIN MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4.2 GHz. Diffused em itter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich


    OCR Scan     		LTE21009R LTE21009RA 711002b FO-41B) LTE21009RA A83A marking 113A db 435A 95A 640 marking 113a transistor 81 110 w 85 MARKING 41B marking code 41b PDF

    Untitled

    Abstract: No abstract text available
    Text: b b S B ' m DD14TS7 3 D E V E L O P M E N T DATA This data sheet contains advance Information and specifications are subject to change without notice. LTE21009R LTE21015R 11' N ANER PHILIPS/DISCRETE ObE D M ICROW AVE LINEAR POW ER TRA N SISTO R N-P-N silicon transistor for use in common-emitter class-A linear power amplifiers up to 4,2 GHz.


    OCR Scan     		DD14TS7 LTE21009R LTE21015R FO-41B) PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE QbE ] • tbSBTBl O Q m T B ? fi ■ MAINTENANCE TYPE LKE2004T for new design use LTE21009R) MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.


    OCR Scan     		LKE2004T LTE21009R) PDF

    LKE2004T

    Abstract: LTE21009R
    Text: N AMER PHILIPS/DISCRETE ObE D • 1.^53^31 o o m ^ B ? a ■ MAINTENANCE TYPE LKÉ2004T for new design use LTE21009R r - iZ-Osr MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.


    OCR Scan     		LTE21009R) 2004T LKE2004T LTE21009R PDF

    SC19a

    Abstract: SC19 LTE21009R BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE21009R NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor LTE21009R FEATURES PINNING - SOT440A


    Original     		LTE21009R OT440A SCA53 127147/00/02/pp8 SC19a SC19 LTE21009R BP317 PDF

    RTC146

    Abstract: IEC134 LKE21004R LTE21009R
    Text: N AMER GbE P H ILIP S /D IS C R E TE D • I bhS3T31 D014141 MAINTENANCE TYPE for new design use LTE21009R T ■ LKE21004R T - iz - o ± r MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz.


    OCR Scan     		LTE21009R) D014141 LKE21004R FO-53, IEC134) RTC146 IEC134 LKE21004R LTE21009R PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor LTE21009R FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors PIN • Self-aligned process entirely ion implanted and gold sandwich metallization • optimum temperature profile


    OCR Scan     		OT440A LTE21009R PDF

    TRANSISTOR SMD MARKING CODE NM

    Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
    Text: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is


    Original     		MC3403 2N2219 1N4148 MBC775 TRANSISTOR SMD MARKING CODE NM philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes PDF

    MRF648

    Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
    Text: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC


    Original     		2N5944 2N5945 2N5946 2N6082 2N6084 2N6439 2SC1257 2SC1258 2SC1259 2SC1605A MRF648 TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent PDF

    Philips Semiconductors Selection Guide

    Abstract: LTE42005S BLS2731-10
    Text: SELECTION GUIDE Page Pulsed power transistors for radar 8 Pulsed power transistors for avionics 8 Linear power transistors 9 CW power transistors 10 Oscillator power transistors 10 Philips Semiconductors Microwave transistors Selection guide PULSED POWER TRANSISTORS FOR RADAR


    OCR Scan     		RX1214B80W RX1214B130Y RX1214B170W RX1214B300Y RX1214B350Y RZ1214B35Y RZ1214B65Y BLS2731-10 BLS2731-20 BLS2731 Philips Semiconductors Selection Guide LTE42005S PDF

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


    OCR Scan     		1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94 PDF

    2SC636

    Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
    Text: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642


    Original     		2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC636 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470 PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 PDF

    smd-transistor DATA BOOK

    Abstract: smd TRANSISTOR code marking sot423 TRANSISTOR SMD MARKING CODE NM emulsion paint thermal compound wps II TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE QA transistor SMD MARKING CODE HF PHILIPS WIDEBAND HYBRID IC MODULES FO-83A
    Text: DISCRETE SEMICONDUCTORS General Supersedes data of 1998 Jul 30 2000 Mar 02 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance


    Original     		MC3403 2N2219 1N4148 MBC775 smd-transistor DATA BOOK smd TRANSISTOR code marking sot423 TRANSISTOR SMD MARKING CODE NM emulsion paint thermal compound wps II TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE QA transistor SMD MARKING CODE HF PHILIPS WIDEBAND HYBRID IC MODULES FO-83A PDF

    SD1446

    Abstract: SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y
    Text: June 1999 ST CROSS REFERENCE WITH PHILIPS INDUSTRY PART NUMBER BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 BLF348 BLF368 BLF378 BLF548 BLU10/12 BLU20/12 BLU30/12 BLU30/28 BLU45/12 BLU60/12 BLU60/28 BLU97 BLU99 BLV12 BLV13 BLV30 BLV31


    Original     		BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 SD1446 SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y PDF

    LFE15

    Abstract: LAE4001R BLS2731-50 BLS2731-10
    Text: Philips Semiconductors Microwave Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC15 1995 issue are shown in bold print. TYPE PAGE TYPE PAGE BLS2731-10 30 PLB16012U 247 BLS2731-20 33 PLB16030U 252 BLS2731-50


    OCR Scan     		BLS2731-10 BLS2731-20 BLS2731-50 BLS2731-110 BLS2731-150 LBE2003S LBE2009S LFE15600X LLE15180xX LLE15370X LFE15 LAE4001R PDF

    Y parameters of transistors

    Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
    Text: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .


    Original     		MC3403 2N2219 1N4148 MBC775 Y parameters of transistors power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor PDF

    Philips TdA3619

    Abstract: on4408 tda3619 on4827 TDA5247HT on4785 OF622 FAST RECOVERY DIODE ON4913 on4802 OQ9811T
    Text: PRODUCT DISCONTINUATION DN43 NOTICE June 30, 2000 Exhibit A SEE DN43 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


    Original     		PDF