1000 v fast recovery rectifier diodes
Abstract: M057 BYD34D BYD34G BYD34J BYD34K BYD34M Philips FA 564
Text: 5bE D m 711002b □DM0575 T22 H P H I N Maintenance type - not for new designs pnmps Avalanche fast soft-recovery rectifier diodes PHILIPS INTERNATIONAL DESCRIPTION Glass passivated rectifier diodes in hermetically sealed axial-leaded ID
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M0575
BYD34
1000 v fast recovery rectifier diodes
M057
BYD34D
BYD34G
BYD34J
BYD34K
BYD34M
Philips FA 564
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P112
Abstract: TIP111 darlington npn tip 102 TIP110 TIP112 TIP115 TIP116
Text: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 ■ PHIN T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. P-N-P complements are
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TIP110
TIP111
711002b
T-33-Z
T0-220AB
TIP115,
TIP116
TIP111
TIP112
P112
darlington npn tip 102
TIP112
TIP115
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fet junction n-channel transistor
Abstract: small signal audio FET 2N4340 N-Channel JFET transistor J-FET philips jfet transistor 2N4340
Text: 711002b DDbôO?! ÔT7 • P H IN Philips Semiconductors D ata sh e e t s ta tu s Prelim inary specification d a te of is s u e O ctob e r 1990 FEATURES • Low noise, noise figure < 1 dB • High o ff isolation. 2N4340 N-channel J-FET PINNING - TO-18 PIN 1
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711Dfi2b
2N4340
711Dfl2b
fet junction n-channel transistor
small signal audio FET
2N4340
N-Channel JFET transistor
J-FET
philips jfet
transistor 2N4340
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fet MARKING MHp
Abstract: sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S
Text: BF996S PHILIPS INTERNATIONAL 5 bE D 711002b D 0 3 l+D7û ÖTß • PHIN F O R D E T A IL E D IN F O R M A T IO N SEE T H E L A T E S T ISSUE OF H A N D B O O K SC07 O R D A T A S H E E T T - 35-27 SILICON N-CHANNEL DUAL GATE MOS-FET D e pletion ty p e fie ld -e ffe c t tra n sisto r in a plastic SO T143 m icro m in ia tu re envelope w ith source and
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BF996S
OT143
OT143.
fet MARKING MHp
sot143 code marking MS
FET marking code
marking ANs
marking L1 fet
BF996S
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hFE-200 to-92 npn
Abstract: 2N4123 2N4124 2N4125 2N4126
Text: 2N4123 _ 9N4194_ PHILIPS INTERNATIONAL SbE D • 711002b D042bb2 T3T ■ PHIN -= I SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in pla stic T O -9 2 envelopes, p rim a rily intended fo r low -pow er, sm all-signal a u d io fre qu e n cy a p p lica tio n s fo r consum er service.
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2N4123
711Dfl2t
D042bb2
2N4125
2N4126.
2N4123
2N4124
100juA;
hFE-200 to-92 npn
2N4124
2N4126
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4E7 philips
Abstract: KY 711 VN2406L FL 210 transistor
Text: • Philips 711002b DDbflOSS T4S ■ PHIN Sem iconductors Data sheet status Product specification date of issue July 1993 FEATURES VN2406L N-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION PINNING - TO -92 variant • Very low RDs 0n
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711002b
VN2406L
MBB073
711Dfl5h
D0bfl057
MC9357
4E7 philips
KY 711
VN2406L
FL 210 transistor
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bd947
Abstract: b0945 BD945 m lc 945 BD943 BD944
Text: BD943 BD945 BD947 H ILIPS INTERNATIONAL _ SbE J> H 711002b 0043070 SOfl • PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.
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BD943
BD945
BD947
7110fllT\
043070T[
BD944;
T-33-17
BD945
bd947
b0945
m lc 945
BD944
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ablebond 293-1
Abstract: philips 3h1 pot core pot core 3h1 NEOSID metal detector coil DIAGRAM metal detector diagram VD neosid OM386M NEOSID 22 inductive proximity detector ic
Text: OM386M OM387M \ PHILIPS INTERNATIONAL 5bE D m 711002b Ô3Ô • HYBRID INTEGRATED CIRCUITS FOR INDUCTIVE PROXIMITY DETECTORS H y b rid integrated c ircu its intended fo r in d u ctive p ro x im ity detectors in tu b u la r co n stru ctio n , especially th e M 8 h o llo w stud. The O M 386M is fo r positive supply voltage and th e O M 387M is fo r
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OM386M
OM387M
711002b
OM386M
OM387M
OM386B/OM387B
7Z69066.
ablebond 293-1
philips 3h1 pot core
pot core 3h1
NEOSID
metal detector coil DIAGRAM
metal detector diagram
VD neosid
NEOSID 22
inductive proximity detector ic
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transistor GR 338
Abstract: BTW58 BTW58-1000R lt 332 diode A 1098 LT BTW58 1200 1300R Transistor sae 103 Gate Turn-Off Thyristors IEC134
Text: SÔE D PHILIPS INTERNATIONAL 711002b DO S 3 1 E b 2flT H P H I N BTW58 SERIES FAST GATE TURN-OFF THYRISTORS Thyristors in T0-220A B envelopes capable o f being turned both on and o ff via the gate. They are suitable fo r use in high-frequency inverters, resonant power supplies, m otor control, horizontal
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711002b
S31Eb
BTW58
T0-220AB
BTW58â
1000R
1300R
transistor GR 338
BTW58-1000R
lt 332 diode
A 1098 LT
BTW58 1200
Transistor sae 103
Gate Turn-Off Thyristors
IEC134
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BST110
Abstract: P-channel max 083
Text: 711002b GObVTMB 1Ô3 IPH IN BST110 P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers. Features • • • • Very low RpSon
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711002b
BST110
200mA
BST110
P-channel
max 083
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BUK104-50L
Abstract: BUK104-50S BUK104-50US
Text: PHILIPS bSE INTERNATIONAL D • 711002b D 0 b 3 f l43 Monolithic temperature and overloadprotected logic level power MOSFET in a 5 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications. APPLICATIONS General controller for driving
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711002b
D0b3fl43
BUK104-50L/S
BUK104-50LP/SP
pK104-50L/S
Ips/lps25
BUK104-60L/S
BUK104-50L
BUK104-50S
BUK104-50US
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TOP 948
Abstract: S944 BDS948 m lc 945 f 948 BDS944 BDS946 USB002 c 948 W468
Text: PHILIPS IN TE RNATIONAL SbE Product specification date of issue April 1991 • 711002b 00431ÛG 33fi « P H I N 33-/7 BDS944/946/948 Data sheet status D T- PNP silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 PNP silicon epitaxial base transistors
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711002b
BDS944/946/948
T-33-/7
OT223)
BDS943/945/947.
OT223
BDS944
BDS946
BDS948
TOP 948
S944
m lc 945
f 948
USB002
c 948
W468
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RZ2731B48W
Abstract: USA104 tRANSISTOR 2.7 3.1 3.5 GHZ cw
Text: 7 3 3 /3 Philips Components Data sheet status Product specification date of Issue June 1992 RZ2731B48W 711002b 5bE D e m itte r e ffic ie n c y . • D iffu s e d e m itte r b a lla s tin g resistors p ro v id in g e x c e lle n t c u rre n t sharing ' 0Ü4L572
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RZ2731B48W
4L572
T-33-13
711005b
004bS77
RZ2731B48W
USA104
tRANSISTOR 2.7 3.1 3.5 GHZ cw
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Philips FA 261
Abstract: Microcontroller AT89S52 40 pin diagram TOP3 package WL 431 80C51 83L51FA 87L51FA 8XL51FA
Text: 711002b OObbll? ^47 H P H I N Philips Semiconductors Microcontroller Products Product specification CMOS single-chip 3.0V 8-bit microcontroller DESCRIPTION FEATURES The 87L51 FA and 83L51 FA hereafter generically referred to as 8XL51FA Single-Chip 3.0V 8-Bit Microcontrollers are
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7110fl2b
83L51FA/87L51
87L51
83L51
8XL51FA)
80C51
8XL51FA
80C51.
8XL51
16-bit
Philips FA 261
Microcontroller AT89S52 40 pin diagram
TOP3 package
WL 431
83L51FA
87L51FA
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Philips FA 291
Abstract: BUV28AF BUV28F
Text: PHILIPS INTERNATIONAL 45E D a 711002b DD31DTS 2 C1PHIN BUV28F BUV28AF T-33-W SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically isolated mounting base, intended for use in converters,' inverters, switching regulators, motor control
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711002b
DD31DTS
BUV28F
BUV28AF
OT186
D0031100
T-33-n
Philips FA 291
BUV28AF
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D0447
Abstract: K572 00M4 Scans-00501 BUK572 12VBS
Text: PHILIPS 5bE INTERNATIONAL D • 711002b 00M4704 DT3 ■ Philips Components_ Datasheet status Preliminary specification date of issue March 1991 Replaces BUK542-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
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BUK542-60A/B
711002b
00M4704
K572-60A/B
PINNING-SOT186A
BUK572
D0447
K572
00M4
Scans-00501
12VBS
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BV722
Abstract: BY723 Q04G533 Cathode indicated by blue band diode Cathode indicated by blue band BY722 BY724 sod BLUE BAND
Text: SbE PHILIPS ]> • 711002b INTERNATIONAL Q04G533 SbE 473 BY722 BY723 BY724 * PH I N D T - O 'i - i s ' SILICON VERY FAST EHT SOFT-RECOVERY RECTIFIER DIODES* EHT rectifier diodes in glass envelopes intended fo r use in high-voltage applications e.g. the high-voltage
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711002b
Q04G533
BY722
BY723
BY724
BY722
BY723
BV722
Cathode indicated by blue band
diode Cathode indicated by blue band
BY724
sod BLUE BAND
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BFQ32S
Abstract: BFR96S GHz PNP transistor SAA 1020 Philips DLM
Text: Philips Sem iconductors Product specification PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION ^ SbE D BFQ32S m 711002b 0G4S433 DMT • PHIN PINNING PNP transistor in a plastic SOT37 envelope. It is intended for use in UHF applications such as broadcast
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BFQ32S
7110fl2b
BFR96S.
BFQ32S
BFR96S
GHz PNP transistor
SAA 1020
Philips DLM
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J112
Abstract: J113 J111 transistor J112 Scans-00946
Text: 711002b □□b?c175 7^3 J111 J112 J113 IPHIN J V. N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc. Features
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711002b
0Clb7cl75
3150S2
J112
J113
J111
transistor J112
Scans-00946
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BFQ42
Abstract: w7 transistor transistor w7 IRF 502 TRANSISTOR BLW29 transistor j18 Si NPN c25a f0pf philips bfq42
Text: P H IL IP S El b5E D INTERNATIONAL 711002b G0b2bD2 3 b l • P H I N BFQ42 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in cl ass-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V . The transistor is resistance stabilized and is
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711002b
BFQ42
BFQ42
BLW29
7Z77622
7Z77623
7Z77624
w7 transistor
transistor w7
IRF 502 TRANSISTOR
transistor j18
Si NPN
c25a
f0pf
philips bfq42
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SOT173
Abstract: BFG505 BFP505 BFR505 X3A-BFR505 crystal PHILIPS
Text: P h ilip s S em icon du ctors P rodu ct specification 1^3 1 - 9 0 NPN 9 GHz wideband transistor crystal PHILIPS SbE INTERNATIONAL » D ESCRIPTION X3A-BFR505 711002b I 0D4bl05 32^ • P H I N M E C H A N IC A L DATA NPN crystal used in BFR505 SOT23 , BFG505
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BFR505
BFG505
OT143)
BFP505
OT173)
X3A-BFR505
X3A-BFR505
RV-3-5-52/733
SOT173
BFG505
BFP505
BFR505
crystal PHILIPS
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specifications tv pattern generator
Abstract: pwm0003 FTH A 001 26 10 IC PRESET TV TUNING KAE V2 QFP48 square tv font PCA84C640 PCA84C846 PCA84C846H
Text: PHILIPS INTERNATIONAL bSE D □ 711002b DObOSai 4T7 « P H I N Philips Objective specification Microcontroller for TV tuning control and OSD application prAaariM fi CONTENTS 1 FEATURES PCA84CXXX KERNEL
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7110flBb
DGbQS31
PCA84C846
PCA84CXXX
14-bit
specifications tv pattern generator
pwm0003
FTH A 001 26 10
IC PRESET TV TUNING
KAE V2
QFP48 square
tv font
PCA84C640
PCA84C846
PCA84C846H
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BD235 PHILIPS
Abstract: bd233 T BD233 bd237 philips BD234 BD237-10 BD235 BD236 BD237 BD238
Text: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE T> • 711002b 004205*4 725 ■ P H I N T - 3 3 - O SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a S O T -3 2 p la stic envelope intended fo r use in te levision and au d io a m p lifie r c irc u its
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BD233
BD235
BD237
711002b
aSOT-32
BD234,
BD236
BD238.
BD233
BD235
BD235 PHILIPS
bd233 T
bd237 philips
BD234
BD237-10
BD237
BD238
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BUK445-500B
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL b5E P m 711002b DDbMDOb BTb • PHIN Product Specification Philips Semiconductors BUK445-500B PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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711062b
BUK445-500B
-SOT186
BUK445-500B
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