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    Untitled

    Abstract: No abstract text available
    Text: TTamer philips /discrete □ bE D bb53^31 □014T41 T M A IN TEN A N C E TYPE LKE21004R J for new design use LTE21009R MICROW AVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich


    OCR Scan     		PDF 014T41 LKE21004R LTE21009R)

    RTC146

    Abstract: IEC134 LKE21004R LTE21009R
    Text: N AMER GbE P H ILIP S /D IS C R E TE D • I bhS3T31 D014141 MAINTENANCE TYPE for new design use LTE21009R T ■ LKE21004R T - iz - o ± r MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz.


    OCR Scan     		PDF LTE21009R) D014141 LKE21004R FO-53, IEC134) RTC146 IEC134 LKE21004R LTE21009R