trw rf
Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130
Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max V BR CBO foac Max Gp Po N.F. at fT••t Ie Max (W) (Vl (Hz) (dB) (W) jdB) (Hz) JA) PD Mati. Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) 5 10 UMOB55 RZ2731B60W
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UMOB55
RZ2731B60W
RZ2833B60W
RZ3135B50W
OME25
OME30L
MKB12100W5
BAL0204
UMIL60
UMIL70
trw rf
ACRIAN
trw rf transistors
acrian inc
trw transistors
TRW MICROWAVE
acrian rf power
FUJITSU MICROWAVE
MRF648
TPM4130
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MRF648
Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Text: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC
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2N5944
2N5945
2N5946
2N6082
2N6084
2N6439
2SC1257
2SC1258
2SC1259
2SC1605A
MRF648
TPV3100
2SC2897
macom
TP3034
SD1393
TP3008
tp9383
transistor 2sC636
MRF255 equivalent
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2SC636
Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Text: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642
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2SC1257
2SC1258
2SC1259
2SC1605A
2SC1729
2SC1804
2SC1805
2SC1946
2SC1946A
2SC1967
2SC636
2sc635
MHW820-1
TP3008
2SC2897
SD1477
2sc2652
TP3034
2SC1804
SD1470
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SD1446
Abstract: SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y
Text: June 1999 ST CROSS REFERENCE WITH PHILIPS INDUSTRY PART NUMBER BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 BLF348 BLF368 BLF378 BLF548 BLU10/12 BLU20/12 BLU30/12 BLU30/28 BLU45/12 BLU60/12 BLU60/28 BLU97 BLU99 BLV12 BLV13 BLV30 BLV31
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BGY916
BLF145
BLF175
BLF177
BLF242
BLF244
BLF245
BLF245B
BLF248
BLF278
SD1446
SD2910
philips blx15
BLV36
BLW60C
st cross reference
blw97
SD4575
BLV103
MX0912B350Y
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2SC635
Abstract: MHW820-1 2SC636 TP3008 sd1393 2sc1729 TP3034 SD1470 2SC2897 TP5051
Text: POWER RF CROSS REFERENCE INDUSTRY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642
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2SC1257
2SC1258
2SC1259
2SC1605A
2SC1729
2SC1804
2SC1805
2SC1946
2SC1946A
2SC1967
2SC635
MHW820-1
2SC636
TP3008
sd1393
2sc1729
TP3034
SD1470
2SC2897
TP5051
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RX1214B150W
Abstract: No abstract text available
Text: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C
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bb53131
RX1214B150W
RX1214B150W
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Untitled
Abstract: No abstract text available
Text: 11_ N AMER PHILIPS/DISCRETE LbSBTBl 0015133 OLE D RX1214B150W r J - 3 2 ^ I 'o ' M IC R O W A V E POW ER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 1.2 to 1.4 GHz frequency range.
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RX1214B150W
bb53T31
T-33-15
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RX1214B150W
Abstract: No abstract text available
Text: T ^ 3 3 - lè RX1214B150W PHILIPS INTERNATIONAL SbE D Bi 7110fl2b DDHbSlE 1T2 « P H I N — M IC R O W A V E P O W E R T R A N S IS T O R NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power am plifier, operating in the 1.2 to 1.4 G H z frequency range.
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RX1214B150W
7110fl2b
711002b
7Z242Ã
RX1214B150W
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RX1214B150W
Abstract: transistor bc 325
Text: J J _ L _ _ N AMER PHILIPS/DISCRETE OLE D • I JJ ^ O5O3J1 3 1 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C
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bb53131
RX1214B150W
resistanc250
RX1214B150W
transistor bc 325
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MX0912B250Y
Abstract: RV2833B5X RV3135B5X RX1214B150W RX1214B300Y RZ1214B125Y RZ1214B35Y RZ1214B65Y RZ2731B16W MRB11175Y
Text: N AMER P H I L I P S / D I S C R E T E 5SE 3> • bbSH^! OOltiSBl 0 ■ T'-J3 3 “' ^ / Power Devices 53 MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE f GHz Vcc (Vi ' U m @ DUTY CYCLE I (%> . Pi. (W> A - ; VC (%) RADAR PULSED L-BAND RZ1214B35Y FO-57C 1.2 - 1.4
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RZ1214B35Y
FO-57C
RZ1214B65Y
RZ1214B125Y
RX1214B150W
FO-91
RX1214B300Y
MX0912B250Y
RV2833B5X
RV3135B5X
RZ2731B16W
MRB11175Y
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
bf0262a
BF0262
OM335
1N5821ID
OM336
OM2061
OM926
BUK645
OM2060
BLY94
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BGY116a
Abstract: fo-57C BGY114E
Text: 67 RF/Microwave Devices RF Power Am plifier M odules co n t. The P h ilip s range in clu d e s RF p o w er m o d u le s inte nded p rim a rily for V H F/U H F m o b ile radio sy stem s and U H F/SH F ce llu la r radio. Th ese m o d u le s save co n sid e ra b le de sign effort and
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BGY110G
BGY95A
BGY95B
BGY96B
BGY114A
BGY114B
BGY114C
BGY114D
BGY114E
BGY116A
fo-57C
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 5SE D • bbSHiai 0011.231 ■ ^ 3 3 ~ \ Power Devices MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE < G H z Vcc (V) U 1.2 - 1.4 1.2 -1 .4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 42 50
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RZ1214B35Y
FO-57C
RZ1214B65Y
RZ1214B125Y
RX1214B150W
MRB11175Y
MRB11350Y
MSB11900Y
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