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    2SC1953

    Abstract: 2SA914 h11a
    Text: Power T ransistors 2SG1953 2SC1953 Silicon NPN Epitaxial Planar Type ;• Package Dimensions AF Power Pre-Amplifier Complementary Pair with 2SA914 ■Features • High cd llector-em itter voltage V ceo • Small collector output capacitance (C„b) • Optimum for 60—100W p re-d riv er in com plem entary pair w ith 2SA914


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    PDF 2SG1953 2SC1953 2SA914 001b3bb 2SC1953 2SA914 h11a

    2SC1953

    Abstract: 2SA914 2SG1953
    Text: Power Transistors 2SG1953 2SC1953 Silicon N P N Epitaxial P lan ar Type A F Pow er Pre-A m plifier C om plem entary Pair with 2 S A 9 1 4 P ackage Dim ensions . • F eatures • High cdllector-emitter voltage V ceo • Small collector output capacitance (C„b)


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    PDF 2SG1953 2SC1953 2SA914 0--100W --10mA, 200MHz 132fl5E 001b3bb 2SC1953 2SA914 2SG1953

    DSP32C-F35-080

    Abstract: DSP32C-R35-080 pir 815 OXE800 we dsp32 dsp32c DSP32C-R35-050 Serial memory ic DSP3207 t17c
    Text: mAT&T Data Sheet June 1995 ; ’^ ^ ^ ’ Microelectronics DSP32C Digital Signal Processor with External Memory Interface Introduction Description AT&T is an industry leader in floating-point digital signal processing. AT&T's DSP32 architecture was introduced in 1985 and is now the accepted stan­


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    PDF DSP32C DSP32 24-hour Q01b414 164-Pin DSP32C-F35-080 DSP32C-R35-080 pir 815 OXE800 we dsp32 DSP32C-R35-050 Serial memory ic DSP3207 t17c

    dsp32c

    Abstract: dsp32 att
    Text: Data Sheet June 1995 ; m A TsJ ^ ^ ^ M ic ro elec tro n ics DSP32C Digital Signal Processor with External Memory Interface Introduction Description AT&T is an industry leader in floating-point digital signal processing. AT&T's DSP32 architecture was introduced in 1985 and is now the accepted stan­


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    PDF DSP32C DSP32 32-bit, DSP32, 164-Pin dsp32 att

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D KM416C1OOOL/LL • 7Tb4].4S GDlb3b5 134 CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1000L/LL is a CMOS high speed 1,048,576 b itx 16 Dynamic Random Access Memory.


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    PDF KM416C1OOOL/LL KM416C1000L/LL 130ns KM416C10OOLVLL-8 150ns KM416C1OOOL/LL-10 100ns 180ns KM416C1000L/LL-7 KM416C1