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Panasonic Electronic Components 2SC19530S TRANS NPN 150V 0.05A TO126B-A1
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2SC1953 Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC1953	Panasonic	NPN Transistor	Original	PDF
2SC1953	Panasonic	Silicon NPN epitaxial planar type	Original	PDF
2SC1953	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SC1953	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC1953	Unknown	Silicon NPN Transistor	Scan	PDF
2SC1953	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SC1953	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SC1953	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC1953	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC1953	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SC1953	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC1953	Unknown	Cross Reference Datasheet	Scan	PDF
2SC1953	Panasonic	Silicon NPN Epitaxial Planar Power Transistor	Scan	PDF
2SC19530S	Panasonic	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN HF 150VCEO 50MA TO-126	Original	PDF

2SC1953Q	Panasonic	Silicon NPN Epitaxial Planar Type Power Transistor	Original	PDF
2SC1953R	Panasonic	Silicon NPN Epitaxial Planar Type Power Transistor	Original	PDF
2SC1953R	Panasonic	Silicon NPN Epitaxial Planar Type Power Transistor	Original	PDF
2SC1953S	Panasonic	NPN Epitaxial Planar Silicon Transistors	Scan	PDF
2SC1953T	Panasonic	NPN Epitaxial Planar Silicon Transistors	Scan	PDF

2SC1953 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SA914 Abstract: 2SC1953 Text: Product Specification www.jmnic.com 2SA914 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC1953 ・Good linearity of hFE ・High VCEO APPLICATIONS ・For audio frequency power pre-amplifier PINNING PIN DESCRIPTION	Original	2SA914 O-126 2SC1953 -30mA -100V; -10mA 2SA914 2SC1953	PDF
2SA0914 Abstract: 2SC1953 Text: Power Transistors 2SC1953 Silicon NPN epitaxial planar type Unit: mm For low-frequency power pre-amplification Complementary to 2SA0914 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 4.6±0.2 Symbol Rating Unit VCBO 150 V Collector to emitter voltage VCEO 150	Original	2SC1953 2SA0914 2SA0914, O-126B 2SA0914 2SC1953	PDF
2SC1953 Abstract: 3202 a ic Text: Power Transistors 2SC1953 Silicon NPN epitaxial planar type Unit: mm For low-frequency power pre-amplification Complementary to 2SA0914 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 4.6±0.2 Symbol Rating Unit VCBO 150 V Collector to emitter voltage VCEO 150	Original	2SC1953 2SA0914 2SA0914, O-126B 200MHz 2SC1953 3202 a ic	PDF
2SA0914 Abstract: 2SA914 2SC1953 Text: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)	Original	2SA0914 2SA914) 2SC1953 O-126B-A1 2SA0914 2SA914 2SC1953	PDF
2SA0914 Abstract: 2SC1953 Text: Power Transistors 2SC1953 Silicon NPN epitaxial planar type For audio system/pre-drive Complementary to 2SA0914 Unit: mm 8.0+0.5 –0.1 3.2±0.2 0.75±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol 0.5±0.1 4.6±0.2 Rating 0.5±0.1 1 VCBO 150	Original	2SC1953 2SA0914 O-126B-A1 2SA0914, 2SA0914 2SC1953	PDF
2SA0914 Abstract: 2SA914 2SC1953 Text: Power Transistors 2SC1953 Silicon NPN epitaxial planar type Unit: mm For low-frequency power pre-amplification Complementary to 2SA0914 2SA914 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 4.6±0.2 Symbol Rating Unit VCBO 150 V Collector to emitter voltage	Original	2SC1953 2SA0914 2SA914) 2SA0914, O-126B 2SA0914 2SA914 2SC1953	PDF
2SA914 Abstract: 2SC1953 Text: Inchange Semiconductor Product Specification 2SA914 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC1953 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency power pre-amplifier PINNING PIN DESCRIPTION	Original	2SA914 O-126 2SC1953 -30mA -100V; -10mA 2SA914 2SC1953	PDF
2SA0914 Abstract: 2SA914 2SC1953 Text: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 Symbol 1.9±0.1 0.75±0.1 Rating 0.5±0.1 Unit 4.6±0.2 Collector-base voltage (Emitter open) VCBO −150	Original	2SA0914 2SA914) 2SC1953 O-126B-A1 2SA0914 2SA914 2SC1953	PDF
Untitled Abstract: No abstract text available Text: Power Transistors 2SC1953 Silicon NPN epitaxial planar type For audio system/pre-drive Complementary to 2SA0914 Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol 0.5±0.1 4.6±0.2 Rating 16.0±1.0	Original	2SC1953 2SA0914	PDF
Untitled Abstract: No abstract text available Text: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 Symbol 0.75±0.1 Rating 0.5±0.1 Unit 4.6±0.2 Collector-base voltage (Emitter open) VCBO −150 V Collector-emitter voltage (Base open)	Original	2SA0914 2SA914) 2SC1953	PDF
2SC1953 Abstract: power transistors semiconductor product 2SA914 NPN Power Transistors Text: SavantIC Semiconductor Product Specification 2SC1953 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to	Original	2SC1953 O-126 2SA914 -10mA 2SC1953 power transistors semiconductor product 2SA914 NPN Power Transistors	PDF
2SA0914 Abstract: 2SA914 2SC1953 Text: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 1.9±0.1 0.75±0.1 Symbol Rating Unit Collector to base voltage	Original	2SA0914 2SA914) 2SC1953 O-126B-A1 2SA0914 2SA914 2SC1953	PDF
2SA0914 Abstract: 2SA914 2SC1953 Text: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol 1.9±0.1 0.75±0.1 Rating 0.5±0.1 Unit 4.6±0.2	Original	2SA0914 2SA914) 2SC1953 O-126B-A1 2SA0914 2SA914 2SC1953	PDF
POWER TRANSISTORS Abstract: 2SC1953 semiconductor product 2SA914 Text: Inchange Semiconductor Product Specification 2SC1953 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to	Original	2SC1953 O-126 2SA914 -10mA POWER TRANSISTORS 2SC1953 semiconductor product 2SA914	PDF

2SA0914 Abstract: 2SA914 2SC1953 Text: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol 1.9±0.1 0.75±0.1 Rating 0.5±0.1 Unit 4.6±0.2	Original	2SA0914 2SA914) 2SC1953 O-126B-A1 2SA0914 2SA914 2SC1953	PDF
2SA0914 Abstract: 2SC1953 Text: Power Transistors 2SC1953 Silicon NPN epitaxial planar type For audio system/pre-drive Complementary to 2SA0914 Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Collector-emitter voltage Base open	Original	2SC1953 2SA0914 O-126B-A1 2SA0914 2SC1953	PDF
common base amplifier circuit designing Abstract: common base amplifier circuit common collector amplifier circuit designing common emitter amplifier common emitter amplifier circuit designing TO-220 packing methods 2SA0914 2SC1953 Text: Power Transistors 2SC1953 Silicon NPN epitaxial planar type For audio system/pre-drive Complementary to 2SA0914 Unit: mm 8.0+0.5 –0.1 3.2±0.2 0.75±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol 0.5±0.1 4.6±0.2 Rating Collector-base voltage Emitter open	Original	2SC1953 2SA0914 2SA0914, O-126B common base amplifier circuit designing common base amplifier circuit common collector amplifier circuit designing common emitter amplifier common emitter amplifier circuit designing TO-220 packing methods 2SA0914 2SC1953	PDF
2SA914 Abstract: 2SC1953 Text: Power Transistors 2SA914 2SA914 Silicon PNP Epitaxial Planar Type • Package Dimensions AF Power Pre-amplifier Complementary Pair with 2SC1953 ■ Features • Good linearity of DC cu rre n t gain • High collector-em itter voltage V (Iife ceo ) • Low collector output capacitance (Cot)	OCR Scan	2SA914 2SC1953 O-126 100MHi 2SA914 2SC1953	PDF
2SA914 Abstract: 2SC1953 Text: Power Transistors 2SA914 2SA914 Silicon PNP Epitaxial Planar Type • Package Dimensions AF Power Pre-amplifier Complementary Pair with 2SC1953 ■ Features • Good linearity of DC current gain Iife • High collector-emitter voltage (Vceo) • Low collector output capacitance (C„b)	OCR Scan	2SA914 2SC1953 100MHi 2SA914 2SC1953	PDF
sC4633 Abstract: 2sc1947 2sc1949 2SC1969 2sc1972 2sc1971 SC-4633 2SC1940 2SC1914A 2SC1913A Text: - 112 - <Ta=25‘C.*EP àïc=25<C m 2SC1913A 2SC1914A 2SC1921 2SC1922 2SC1923 2SC1924 2SC1925 2SC1926 2SC1927 2SC1929 2SC1941 2SC1942 2SC1944 2SC1945 2SC1946 2SC1946A 2SC1947 2SC1949 2SC1952 2SC1953 2SC1955 2SC1959 2SC1965 2SC1965A 2SC1966 2SC1967 2SC1968A	OCR Scan	2SC1913A 2SC1914A 2SC1921 2SC1922 2SC1923 2SC1924 2SC1925 2SC1955 2SA562TM O-92JÃ sC4633 2sc1947 2sc1949 2SC1969 2sc1972 2sc1971 SC-4633 2SC1940 2SC1913A	PDF
2SC2720 Abstract: 2SC2720-A 2SD772 nec 2SC3S31 2SC3098 2SC3358 2SC3531 2SC1730 nec 2sd772 2SC3110 Text: - M £ tt € Manuf. Type No. 2SC 3786 / H 2SC 3 7 8 7 / " = 2SC 3788 = ft ft 2SC 3 7 8 9 ^ = 2SC 3790 = B * SANYO TOSHIBA 'S NEC B tL HITACHI ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — b. ROHM 2MJ1Z7Ö 2SD1692 $ * 173 2SC1953 2SC3620 2SC2682 2SC2258	OCR Scan	2SD1692 2SD1276 2SC1953 2SC3620 2SC2682 2SC2258 2SC3271F 2SC2688 2SC1501 2SC2720 2SC2720-A 2SD772 nec 2SC3S31 2SC3098 2SC3358 2SC3531 2SC1730 nec 2sd772 2SC3110	PDF
2SC1953 Abstract: 2SA914 h11a Text: Power T ransistors 2SG1953 2SC1953 Silicon NPN Epitaxial Planar Type ;• Package Dimensions AF Power Pre-Amplifier Complementary Pair with 2SA914 ■Features • High cd llector-em itter voltage V ceo • Small collector output capacitance (C„b) • Optimum for 60—100W p re-d riv er in com plem entary pair w ith 2SA914	OCR Scan	2SG1953 2SC1953 2SA914 001b3bb 2SC1953 2SA914 h11a	PDF
2SA914 Abstract: 2SC1953 Text: PANASONIC INDL/ELEKiSEMI} 75C D J 1^35654 □00fl77feJ □ h *_ T ‘ 5 3 " 7 2SA914 2SA914 '> iJ zj > PN P x fcf£ ^r'> 7 Jl^y Is PNP Epitaxial Planar '(g;^;SWi HU liltiffl/AF Power Pre-amplifier 2SC1953 >J/Complementary Pair with 2SC1953 • ^/Features	OCR Scan	0Dfl77t, 2SA914 2SC1953 2SC1953 100MHÃ 2SA914	PDF
2SC1953 Abstract: 2SA914 2SG1953 Text: Power Transistors 2SG1953 2SC1953 Silicon N P N Epitaxial P lan ar Type A F Pow er Pre-A m plifier C om plem entary Pair with 2 S A 9 1 4 P ackage Dim ensions . • F eatures • High cdllector-emitter voltage V ceo • Small collector output capacitance (C„b)	OCR Scan	2SG1953 2SC1953 2SA914 0--100W --10mA, 200MHz 132fl5E 001b3bb 2SC1953 2SA914 2SG1953	PDF

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2SC1953 Price and Stock

Panasonic Electronic Components 2SC19530S

2SC1953 Datasheets (19)

2SC1953 Datasheets Context Search

2SA914

2SA0914

2SC1953

2SA0914

2SA0914

2SA0914

2SA914

2SA0914

Untitled

Untitled

2SC1953

2SA0914

2SA0914

POWER TRANSISTORS

2SA0914

2SA0914

common base amplifier circuit designing

2SA914

2SA914

sC4633

2SC2720

2SC1953

2SA914

2SC1953