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    Text: HL8312E/G GaAIAs LD HITACHI/ OPTOELECTRONICS Description S4E T> I 4 4 ^ 2 0 5 G0120b7 «Him -4 1 - o s The HL8312E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment


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    PDF HL8312E/G G0120b7 HL8312E/G 44Tfei5D5 001E070