ZBD953
Abstract: No abstract text available
Text: PNP SIUCON PLANAR POWER TRANSISTOR ZBD953 PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * Fast switching * Guaranteed hFE specified up to 4 Amps * Low collector-emitter saturation voltage T0126 ABSOLUTE MAXIMUM RATINGS. VALUE UNIT V CBO -140 V PARAMETER
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ZBD953
T0126
001G35S
ZBD953
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 1 - MARCH 94_ ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE UNIT v CBO -25 V VCEO -25 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current
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001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX689B — IS S U E ! - M A Y 94_ • FEATURES * 20 Volt VCE0 * * Gain of 400 at lc=2 Amps Very low saturation voltage APPLICATIONS * * Darlington replacement
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ZTX689B
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 -MARCH 94 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage VALUE UNIT v CBO 50 V VCEO 45 V Emitter-Base Voltage v EBO 5 V Base Current • b 100 mA Continuous Collector Current
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cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 1 - JU N E 94_ FEATURES » * 60 Volt VCE0 Gain of 10k at lc=100mA ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT v CBO -60 V Collector-Em itter Voltage v CEO
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100mA
-100nA,
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISS U E2- MARCH 94_ FEATU RES * H ig h v o lta g e A P P L IC A T IO N S * T e le p h o n e d ia lle r circ u its ABSOLUTE MAXIMUM RATINGS. PAR A M ET ER SYM BOL Collector-Base Voltage
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001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT704 ISSUE 1 - FEB 94_ FEATURES * 100 Volt v CE0 * Gain of 3K at lc=1 Am p * P w - lW a t t APPLICATIONS * * Lamp, solenoid and relay drivers Replacement of T0126 and T0220 darlington transistors
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FXT704
T0126
T0220
ZTX704
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSU E 1 - M AY 94 FEATURES * * 60 Volt V CE0 0.8 Am p continuous current * Gain of 10K at lc=0.5 Am p APPLICATIO N S * Lamp, solenoid and relay drivers E E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS.
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001G35S
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3fs 4a
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94_ FE A T U R E S * 450 Volt V DS * R dsi « . - 1500 ABSOLUTE MAXIMUM RATINGS. SYM BOL PARAMETER Drain-Source Voltage VALUE UNIT V DS -450 Continuous Drain Current a tT am[j=25°C
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cH7Q57Ã
001G35S
3fs 4a
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -JU L Y 94_ FEATURES * 60 Volt V,DS ^DS on - 0 ,3 3 fl Spice model available APPLICATIONS * DC-DC convertors * Solenoids / relay drivers for automotive ABSOLUTE MAXIMUM RATINGS. PARAMETER
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Tamtp25Â
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 1 - APRIL 94_ FEATURES * 200 Volt V,CEO 1 Amp continuous current P,or 1 W att ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT v CBO -200 V Collector-Emitter Voltage
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001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 -J U L Y 94_ FEATURES * 100 Volt V CE0 * 2 A m p continuous current * Low saturation voltage * P,ot=1W a tt ABSOLUTE M A X IM U M RATINGS. Collector-Emitter Voltage Emitter-Base Voltage
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ZTX753
ZTX752
cH7Q57Ã
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94 FE A T U R E S * 50 Volt V,DS * R,D Stonr= 10il L o w threshold ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Drain-Source Voltage Continuous Drain Current at T amtj=25°C VALUE UNIT V DS -50 V •
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cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 - SEPTEMBER 94 FEATURES * 15 Volt V,CEO Gain of 200 at lc=2 Amps Very low saturation voltage ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT VCB0
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001G35S
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2- NOVEMBER 94 ABSOLUTE M A XIM U M RATINGS. PARAMETER SY M B O L Collector-Emitter Voltage VALUE ^CES Continuous Drain Current Pulsed Drain Current UNIT 60 V 0.2 A ^DM 0.5 A Gate Source Vootage V qs ±40
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001G35S
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR ABRUPT TUNER DIODE ISSUE 2 - SEPTEMBER 94_ DIODE PIN CONNECTION 2 ANODE CATHODE ILECTRICAL CHARACTERISTICS at Tamb=25°C SYMBOL PARAMETER MIN TYP MAX 30 UNIT Reverse Breakdown Voltage Vr Reverse Voltage Leakage Ir Case Capacitance
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ZC744
50MHz
cH7Q57Ã
001G35S
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BO 241 A
Abstract: No abstract text available
Text: NPN SILICON PLANAR M EDIUM POWER TRANSISTORS ZTX650 ZTX651 ISSU E 2 - J U L Y 94_ FEATURES * 60 Volt V CE0 * 2 Am p continuous current * Low saturation voltage * Ptot= l Watt E E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS.
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ZTX650
ZTX651
cH7Q57Ã
001G35S
BO 241 A
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 100 Volt V,DS * R,DS on =' 0.5Q Spice m odel available ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS 100 V Continuous Drain Current a tT amtj=25°C
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001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ZTX604 ZTX605 ISSUE 1 - MARCH 94 FEATURES * 120 Volt VCE0 * 1 A m p continuous current * Gain o f 2K at lc=1 A m p * Ptot= 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage
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ZTX604
ZTX605
001G35S
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94_ FEATURES * 200 Volt V DS * RDS on =10« * Low threshold APPLICATIONS * Telephone handsets REFER TO ZVNL120A FOR GRAPHS ABSOLUTE M A X IM U M RATINGS. SY M B O L PARAM ETER
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ZVNL120A
cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT ZVP2120C MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94 FEATURES * 200 Vo lt VDS * RDS on.=25n _ REFER TO ZVP2120A FOR GRAPHS E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VALUE UNIT
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ZVP2120C
ZVP2120A
001G35S
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ca 361 e ic
Abstract: No abstract text available
Text: PNP SILICON PLANAR POWER TRANSISTOR ZBD957 PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * * * Fast switching Guaranteed hFE specified up to 1 A m p L o w collector-emitter saturation voltage T0126 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L Collector-Base Voltage
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ZBD957
T0126
001G35S
ca 361 e ic
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR BC372 ISSUE 2 - SEPT 93_ FEATURES * * 100 Volt VCE0 Gain of 8k at lc=250mA * lc=1 Amp ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage v CBO 100 V Collector-Emitter Voltage
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BC372
250mA
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX957 ISSUE 3 -J U N E 94_ • FEATURES * 1 Am p continuous current * * Up to 2 Am ps peak current Very lo w saturation voltage * * Excellent gain characteritics up to 1 Am p
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ZTX957
0Q1Q354
001G35S
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