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    Untitled

    Abstract: No abstract text available
    Text: P D - 9.1132 International d û Rectifier IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast Fast IGBT Features c • Short circuit rated - 1 Ops @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


    OCR Scan     		PDF IRGBC30K-S C-865 SMD-220 C-866 0020fc

    Untitled

    Abstract: No abstract text available
    Text: bbSBTBl 0D20bSD 7 SSE D N AUER PHILIPS/ DISCRE TE PowerMOS transistor Fast Recovery Diode FET BUK627-400A BUK627-400B T -3 7 -II GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. FREDFET with fast recovery


    OCR Scan     		PDF 0D20bSD BUK627-400A BUK627-400B BUK627 -400A T-39-H bS3T31 0020bS4