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    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM0910-15 Features • High power - p 1dB = 42.0 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package RF Performance Specifications Q¡ = 25°C


    OCR Scan     		PDF TIM0910-15 2-11C1B) MW50060196 TCH7250 002E2L TIM0910-1 TCH72S0