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    Microchip Technology Inc MCP3002-I-MS

    IC ADC 10BIT SAR 8MSOP
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    DigiKey MCP3002-I-MS Tube 2,279 1
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    Microchip Technology Inc MCP1701AT-5002I-MB

    IC REG LINEAR 5V 250MA SOT89-3
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    DigiKey MCP1701AT-5002I-MB Digi-Reel 1,533 1
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    MCP1701AT-5002I-MB Cut Tape 1,533 1
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    MCP1701AT-5002I-MB Reel 1,000 1,000
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    Microchip Technology Inc MCP1804T-C002I-MT

    IC REG LINEAR 12V 150MA SOT89-5
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    DigiKey MCP1804T-C002I-MT Digi-Reel 1,392 1
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    MCP1804T-C002I-MT Cut Tape 1,392 1
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    MCP1804T-C002I-MT Reel 1,000 1,000
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    Microchip Technology Inc MCP1804T-C002I-MB

    IC REG LINEAR 12V 150MA SOT89-3
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    DigiKey MCP1804T-C002I-MB Reel 1,000 1,000
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    Microchip Technology Inc PIC24FJ32GA002-I-ML

    IC MCU 16BIT 32KB FLASH 28QFN
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    DigiKey PIC24FJ32GA002-I-ML Tube 703 1
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    002IM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HM62W1664H Series HM62W1864H Series P r e lim in a r y 65536-word x 16/18-bit High Speed CMOS Static RAM T h e H M 6 2 W 1 6 6 4 H /H M 6 2 W 1 8 6 4 H is an asyncronous 3.3 V operation high speed static RAM organized as 64 kword x 16/18 bit. It realize h ig h sp eed access tim e 2 5 /3 0 /3 5 /4 5 ns w ith


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    HM62W1664H HM62W1864H 65536-word 16/18-bit 1664H 1864H 400-mil 44-pin 1664HJP-25 1664Hto PDF

    29f002tc

    Abstract: No abstract text available
    Text: FLASH MEMORY CMOS 2M 256K x 8 BIT MBM29F002T C - 5 5 -70/-90/M B M29 F002B C - 55 /-70/-90 • FEATURES • • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands


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    MBM29F002T -70/-90/M F002B 32-pin F9811 29f002tc PDF

    MBM29LV002B

    Abstract: No abstract text available
    Text: FLASH MEMORY CMOS 2M 256K x 8 BIT MBM29LV002T-1 0.-12/M BM29LV002B-10-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts


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    MBM29LV002T-1 -12/M BM29LV002B-10-12 40-pin F9805 MBM29LV002B PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORY CMOS 2 x 256K x 32 BIT SYNCHRONOUS GRAPHIC RAM MB81G163222-70/-80/-10 CM OS 2-Bank of 262,144-W ord x 32-Bit Synchronous Graphic Random Access M em ory • DESCRIPTION The Fujitsu MB81G163222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing


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    MB81G163222-70/-80/-10 32-Bit MB81G163222 F9805 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20863-3E FLASH MEMORY CMOS 2M 256K x 8 BIT MBM29LV002TC-70-90-12/MBM29LV002BC-70 90-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands


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    DS05-20863-3E MBM29LV002TC-70-90-12/MBM29LV002BC-70 40-pin F40008S-1C-1 V002TC-70/-90/-12/MBM29LV002BC-70/-90/-12 LCG-40P-M02) C40052S-4C-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: cP FUJITSU DS06-8010-1E . DATA SHEET ASSP IF Band PLL Frequency Synthesizer M B 15S 00 S e r ie s • DESCRIPTION The Fujitsu MB15S series is an exclusive Intermediate Frequency IF band Phase Locked Loop (PLL) frequency synthesizer with pulse swallow operation. It can operate maximum at 300MHz.


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    DS06-8010-1E MB15S 300MHz. F08002S4C MB15S00 FPT-8P-M03) 4175b PDF

    29f002t

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION ly p a c MX29F002/002N 2M -B IT [256K x 8] C M O S F L A S H M E M O R Y FEATURES • 2 6 2 ,1 4 4 x 8 only • Fast ac cess tim e: 4 5 7 5 5 /7 0 /9 0 /1 2 0 n s *p le a s e refer • to A C /D C characteristic table Low pow er consum ption


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    MX29F002/002N PM0547 29f002t PDF

    256x16* STATIC RAM

    Abstract: 10 35L W9 10 35L W1 10 35L W8 sc 4145 KM4216C256 KM4216V256 74143 10 35L a8 capacitor 0051142
    Text: CMOS VIDEO RAM KM4216C/V256 2 56K X 16 B it CMOS Video HAM The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port


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    KM4216C/V256 110ns 130ns 150ns KM4216C256 120mA 110mA 100mA KM4216V256 256x16* STATIC RAM 10 35L W9 10 35L W1 10 35L W8 sc 4145 74143 10 35L a8 capacitor 0051142 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET D S 0 5 -1 1 0 2 9 -1 E MEMORY 4 x 1 Mx16BI T SYNCHRONOUS DYNAMIC RAM M B 8 1 1 6 4 1 6 4 2 A -1 2 5 /-1 0 0 /-8 4 /-6 7 /-1 2 5 L /-1 0 0 L /-8 4 L /-6 7 L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory


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    Mx16BI 576-Word MB811641642A 16-bit 2A-125/-100/-84/-67/-125L/-100L/-84L/-67L 54-pin FPT-54P-M02) 002iM PDF