Untitled
Abstract: No abstract text available
Text: KM48S2020C CMOS SDRAM Revision History Revision ,4 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - input leakage Currents (Inputs / DQ) are changed.
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OCR Scan
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KM48S2020C
PC100
44-TS
0P2-400F
44-TSQP2-400R
003b2SB
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PDF
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tl 0741
Abstract: ic tl 0741 44-TSOP2-400R v6400
Text: Advance Information KM23V64000 E T CMOS MASK ROM 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM GENERAL DESCRIPTION FEATURES S w itch ab le organ izatio n 8,3 88,60 8 x 8(b yte m ode) 4 ,1 9 4 ,3 0 4 x 16(w ord m ode) Fast access tim e 3.3V O pe ra tion : 120ns(m ax.)
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OCR Scan
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KM23V64000
64M-Bit
/4Mx16)
120ns
150ns
44-TS
0P2-400F
44-TSOP2-400R
003b2SB
tl 0741
ic tl 0741
44-TSOP2-400R
v6400
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PDF
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tl 0741
Abstract: ic tl 0741
Text: KM23C16000C E T CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access tim e : 100ns(M ax.) • Supply voltage : single +5V • Current consumption
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OCR Scan
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KM23C16000C
16M-Bit
/1Mx16)
100ns
16000C
44-TSQP2-400
23C16000C
152x8
576x16
44-TS
tl 0741
ic tl 0741
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary KM23V16000C E T CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM GENERAL DESCRIPTION FEATURES T he K M 2 3 V 1 6 0 0 0 C (E )T is a fu lly static m ask pro gra m m a ble S w itch a b le organ izatio n 2,0 97,15 2 x 8 (b yte m ode) 1,048,576 x 1 6(w ord m ode)
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OCR Scan
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KM23V16000C
16M-Bit
/1Mx16)
120ns
150ns
30/25m
44-TS
0P2-400F
44-TSOP2-400R
003b2SB
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PDF
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