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    D0304

    Abstract: T-46
    Text: ADV MI CRO MEMORY 4ÖE 02S7S2Ö J> 003D4S3 h • AMD4 T - 46-13-29 Advanced Micro Devices A m 2 7 C 1 0 2 4 1 Megabit (65,536 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ High Speed Flashrite programming ■ Fast access tim e — 100 ns ■ Low power consumption:


    OCR Scan     		02S7S2Ã 003D4S3 T-46-13-29 Am27C1024 16-Bit) 40-pin 0D304L 06780-009E D0304 T-46 PDF

    BUK417-500AE

    Abstract: BUK417-500B 500ae BUK417-500BE BUK417
    Text: bTE D N AMER P HI LI PS/ DIS CRE TE • bbSBRBl GD3DMS0 T7R * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor ¡n ISOTOP envelope. The device is intended for use in


    OCR Scan     		BUK417-500AE/BE OT227B BUK417 -500AE -500BE BUK417-500AE BUK417-500AE BUK417-500B 500ae BUK417-500BE PDF