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    Text: D N AMER P H IL IP S /D IS C R E T E • bb53=i31 D 0 3 0 b 5 0 B3Q « A P X Philips Sem iconductors Product Specification Pow erM O S transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in


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    PDF O220AB UK455-200A/B BUK455 -200A bb53R31 Q03Qb53 bb53T31 003Qb54 BUK455-200A/B