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    MOSFET 900V 3A

    Abstract: No abstract text available
    Text: SSW/I3N90A A dvanced Power MOSFET FEATURES ~ 900 V ^DS on = 6.2 Q ^DSS • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 900V ■ Low RDS(0N) : 4.679 Q. (Typ.) < CO Rugged Gate Oxide Technology


    OCR Scan     		SSW/I3N90A 0040b77 MOSFET 900V 3A PDF