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    A13E

    Abstract: 28F201 5 pin A13E M28F201
    Text: SGS-1H0MS0N M28F201 m 2 Mb 256K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING • ■ ■ ■ 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10ns typical ■ ELECTRICAL CHIP ERASE in 1s RANGE ■ LOW POWER CONSUMPTION


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    PDF M28F201 PLCC32 TSOP32 M28F201 28F201 006MLi A13E 28F201 5 pin A13E