thyristor TAG 103 X
Abstract: thyristor TAG 103 Thyristor TAG TAG thyristor Thyristor TAG 22 400 thyristor st 103 BT150 U-09 thyristor TAG 13 Thyristor TAG 03 400
Text: PHILIPS INTERNATIONAL bSE 3> WM 711Dß2b 0Gfci23S0 bb2 • P H I N I - J BT150 k _ THYRISTORS Glass-passivated th yristo r in T 0-220A B envelope, featuring sensitive gate triggering as low as 200 juA.
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0L23SÃ
BT150
O-220AB
O-22QAB
M2678
thyristor TAG 103 X
thyristor TAG 103
Thyristor TAG
TAG thyristor
Thyristor TAG 22 400
thyristor st 103
BT150
U-09
thyristor TAG 13
Thyristor TAG 03 400
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DT139
Abstract: DT139F M1632 BT139F M1628 gate control circuits for bt139 for heating applications
Text: PHILIPS INTERN A T I O N A L bSE T> m 7110âE?b OObSBlfi Tôt. B I PHI N BT139F SERIES FULL-PACK TRIACS Glass-passivated 16 ampere triacs in SOT-186 envelopes, which feature an electrically isolated m ounting base, They are intended fo r use in applications requiring high bidirectional transient and blocking
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BT139F
OT-186
BT139F-
OT-186
DT139
DT139F
M1632
M1628
gate control circuits for bt139 for heating applications
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power • PidB = • High gain dBm at 4.9 GHz to 5.1 GHz
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TIM4951-30L
T017ESQ
TIM4951-SOLÂ
M4951-30L
MW5059Ã
00B231b
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Untitled
Abstract: No abstract text available
Text: HCS151MS S ttftlSSSl Radiation Hardened 8-Input Multiplexer S e p te m b e r 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16 TOP VIEW • Total Dose 200K RAD (Si)
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HCS151MS
MIL-STD-1835
CDIP2-T16
Range53
05A/cm2
HCTS151
TA14467A.
00b23b7
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Untitled
Abstract: No abstract text available
Text: f f l H A R R HCS 160MS IS S E M I C O N D U C T O R Radiation Hardened BCD Decade Synchronous Counter September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C
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160MS
MIL-STD-1835
CDIP2-T16,
x1012
HCS160MS
05A/cm2
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Untitled
Abstract: No abstract text available
Text: æ HARRIS S E M I C O N D U C T O R H C S 1 2 5 M S Radiation Hardened Quad Buffer, Three-State September 1995 Features Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T14, LEAD FINISH C TOP VIEW 3 Micron Radiation Hardened SOS CMOS
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IL-STD-1835
CDIP2-T14,
00b2331
HCS125MS
HCS125M
QDb2332
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DT139
Abstract: DT139F
Text: PHILIPS INTERNATIONAL bSE D B 7110flE?b 0 G b 2 3 1 0 Tôt. B I P H I N BT139F SERIES FULL-PACK TRIACS Glass-passivated 16 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base, They are intended fo r use in applications requiring high bidirectional transient and blocking
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7110flE
BT139F
OT-186
BT139F--500
ax500
DT139
DT139F
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IT 715 triac
Abstract: BT139 715 triac 1139G iron bh curve TRIAC TAG e3
Text: PHILIPS INTERNATIONAL bSE ì> B 711DÔSb DDfc.53G7 ITP I PHIN BT139 SERIES TRIACS Glass-passivated 16 ampere triacs intended fo r use in applications requiring high bidirectional transient and blocking voltage capability, and high thermal cycling performance w ith very low thermal resistances,
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BT139
220AB
711002b
00b231b
BT139F
7110fiBb
IT 715 triac
715 triac
1139G
iron bh curve
TRIAC TAG e3
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M2404
Abstract: BT138F triac 134 M3403 triac bt138f
Text: PHILIPS INTERNATIONAL bSE ]> • 711002t. 0 ü b 2 2 R 5 J bS'i « P H I N BT138F SERIES FULL-PACK TRIACS Glass-passivated 12 ampere triacs in SO T-186 envelopes, w h ic h fe a tu re an e le c tric a lly isolated m o u n tin g base. T h e y are intended f o r use in applica tio ns req u irin g high b id ire c tio n a l tra n sie n t and b lo ckin g
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711002b
L22R5
BT138F
OT-186
BT138F-
M2404
triac 134
M3403
triac bt138f
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B1139
Abstract: d8655 TRIAC TAG 90 TAG 84 triac BT139 M1632 BT139 Series E tag l2 triac TRIAC TAG 96 B1139G
Text: PH ILIPS I N T E R N A T I O N A L b5E D H 7U0Ö2fc> DütiE307 ITO I PHIN BT139 SERIES TRIACS Glass-passivated 16 ampere triacs intended fo r use in applications requiring high bidirectional transient and blocking voltage capability, and high thermal cycling performance w ith very low thermal resistances,
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7110021p
BT139
BT139-
220AB
B1139
d8655
TRIAC TAG 90
TAG 84 triac
M1632
BT139 Series E
tag l2 triac
TRIAC TAG 96
B1139G
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DS75150J-8
Abstract: No abstract text available
Text: IDE D | L S O l l S b 0 0 b 5 3 4 3 1 — National Semiconductor / - 7 DS75150 Dual Line Driver General Description Features The DS75150 is a dual monolithic line driver designed to satisfy the requirements of the standard interface between data terminal equipment and data communication equip
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DS75150
RS-232-C.
tSD112b
T-75-45-05
tl/f/5794-10
DS75150J-8
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Untitled
Abstract: No abstract text available
Text: I ll^ IC WORKS W137 Bx Notebook System Frequency Synthesizer Features • Maximized EMI suppression using IC WORKS’ Spread Spectrum Technology Key Specifications • Two copies of CPU output Supply Voltages: • Six copies of PCI output Synchronous w/CPU output
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24/48MHz
318MHz
100MHz
or66MHz
175ps
200ps
500ps
250ps
FDS-024
D0bE33
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Untitled
Abstract: No abstract text available
Text: HCS139MS Radiation Hardened Dual 2-to-4 Line Decoder/Demultiplexer S e p te m b e r 1 9 9 5 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si)
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HCS139MS
MIL-STD-1835
CDIP2-T16,
00fci2357
05A/cm2
10Oum
HCS139
TA14309A.
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Untitled
Abstract: No abstract text available
Text: HCS157MS H A R R IS æ S E M I C O N D U C T O R Radiation Hardened Quad 2-Input Multiplexers September 1995 Features • Pinouts 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C
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HCS157MS
MIL-STD-1835
CDIP2-T16,
05A/cm2
HCS157
TA14371
00b23fl5
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Untitled
Abstract: No abstract text available
Text: fS Ì H A R R HCS138MS I S S E M I C O N D U C T O R Radiation Hardened Inverting 3-to-8 Line D ecoder/D em ultiplexer August 1995 Features Pinouts 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16 TOP VIEW • 3 Micron Radiation Hardened SOS CMOS
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HCS138MS
MIL-STD-1835
CDIP2-T16
05A/cm2
HCS138
TA14361
43D2271
bB34T
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BT152
Abstract: BT152 Series d8550a VSA060-I D8550 D8552 aa t 224 PHILIPS BT152-400R D8551 TG 56369
Text: bSE D P H I L I P S INTERNATIONAL • T llQ B E b OQtiSBßS H P H IN BT152 SERIES THYRISTORS Glass-passivated thyristors in TO—220AB envelopes, which are particularly suitable in situations creating high fatigue stresses involved in thermal cycling and repeated switching. Applications
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BT152
220AB
BT152â
d8615a
BT152 Series
d8550a
VSA060-I
D8550
D8552
aa t 224
PHILIPS BT152-400R
D8551
TG 56369
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triac bt 135
Abstract: triac BT 140 TAG 84 triac BT 139 F applications note TRIAC BT 139 bt 139 BT 140 triac BT139 triac BT 147 triac BT 24
Text: PHILIPS INTERNATIONAL b5E I> m 711DÖ2L DDLSBO? ITP I PHIN BT139 SERIES TRIACS Glass-passivated 16 ampere triacs intended fo r use in applications requiring high bidirectional transient and blocking voltage capability, and high thermal cycling performance w ith very low thermal resistances,
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711002b
00L23Q7
BT139
220AB
triac bt 135
triac BT 140
TAG 84 triac
BT 139 F applications note
TRIAC BT 139
bt 139
BT 140 triac
triac BT 147
triac BT 24
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st486dx2-66
Abstract: ST486/DX/DX2
Text: ST486/DX/DX2 3 and 5Volt CPUs - ELECTRICAL SPECIFICATIONS 4.0 ELECTRICAL SPECIFICATIONS Electrical specifications in this chapter are valid for both the ST486DX and the clock-dou bled ST486DX2. The ST486DX2 differs from the ST486DX in that the ST486DX2 internal
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ST486/DX/DX2
ST486DX
ST486DX2.
ST486DX2
ST486DX/DX2,
ST486DX/DX2
outp31-A
D31-D
st486dx2-66
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NEC RDRAM 36
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD488130L 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK Description The 16-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 2M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling
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uPD488130L
16M-BIT
16-Megabit
P32G6-65A
NEC RDRAM 36
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TAG 84 triac
Abstract: triac BT 140 TRIAC BT 139 TRIAC TAG 90 bt139 BT139G TRIAC TAG 96 bt139 Application BT139 Series E M1646
Text: PHILIPS INTERNATIONAL bSE » B 711DÖSL 00L.2307 ITO I BT139 SERIES TRIACS Glass-passivated 1 6 am pere triacs intended fo r use in applications requiring high b id irectio n a l tran sien t and b locking voltage c a p a b ility , and high th erm al cycling perform an ce w ith very lo w th erm al resistances,
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711002b
BT139
220AB
BT139-
TAG 84 triac
triac BT 140
TRIAC BT 139
TRIAC TAG 90
BT139G
TRIAC TAG 96
bt139 Application
BT139 Series E
M1646
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Untitled
Abstract: No abstract text available
Text: 33 HiSKVS HCS112MS Radiation Hardened DllSl JK Flip-Flop September 1995 Features • Pinouts 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si)
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HCS112MS
MIL-STD-1835
CDIP2-T16,
05A/cm2
HCS112
TA14341A.
43D2271
00b2323
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BT138F
Abstract: TRIAC BT138F TLC 555
Text: PHILIPS INTERNATIONAL b SE ]> • 711GÛ2L. D G L 2 2 R S bS'i « P H I N BT138F SERIES J FULL-PACK TRIACS Glass-passivated 12 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base. They are intended for use in applications requiring high bidirectional transient and blocking
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L22R5
BT138F
OT-186
BT138Fâ
TRIAC BT138F
TLC 555
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st4 triac
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL bSE D • 711GÛ2b DGb22RS b5^ BI PHI N BT138F SERIES FULL-PACK TRIACS Glass-passivated 12 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking
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DGb22RS
BT138F
OT-186
BT138F--5
711002b
b2305
st4 triac
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion . |m 3 = -44 dBc at Po = 31.5 dBm, - Single carrier level • High power - P idB = 42.5 dBm at 4.4 GHz to 5.0 GHz
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TIM4450-16L
TIM4450-16L
MW50540196
00B2371
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