431202036640 choke
Abstract: CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit
Text: PHILIPS INTERN A T I O N A L L.5E D 711Dfi2ti 00b33>4b Ô3Û • PHIN ■ I BLW85 _ A _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized and
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BLW85
QQb3357
431202036640 choke
CEF 83 A 3
BLW85
ZL18
blw85 transistor test circuit
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43120203664
Abstract: BLW83 PHILIPS 4312 amplifier 431202036640 choke BY206 philips carbon film resistor
Text: bSE V m 7110&Eb □□b332*ì 75^ BiPHIN BLW83 _PHILIPS INTERNATIONAL_ ^ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transm itting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V. The transistor is specified fo r s.s.b. applications as linear
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BLW83
711002b
00b3337
BLW83
43120203664
PHILIPS 4312 amplifier
431202036640 choke
BY206
philips carbon film resistor
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Untitled
Abstract: No abstract text available
Text: The ARM Processor Family This Data Sheet is one of a series describing the ARM Family of products from GEC Plessey Semiconductors. The table below shows the current range of 32-bit RISC M icroprocessors/M icrocontrollers. GPS Name P ackag e Description 32 bit RISC core with 32 bit address range.
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32-bit
100PQFP
144TQFP
160PQFP
ser26
FIQ26
1RQ26
upervisor26.
37bfl522
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Untitled
Abstract: No abstract text available
Text: HS- 82 C 54 RH S ttftsras Radiation Hardened CMOS Programmable Interval Timer August 1995 Features Pinouts • Radiation Hardened 24 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T24 TOP VIEW - Total Dose > 1 0 5 RAD (Si) - Transient Upset > 10 RAD (Si)/sec
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MIL-STD-1835
CDIP2-T24
82C54
HS-80C86RH
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sda 5241
Abstract: SDA5241 s0003
Text: SIEM ENS Data Slicer for Teletext SDA 5231-5 Preliminary Data Bipolar IC Features • Crystal-stable data clock regeneration for a bit rate Of 6.9375 MHz • Separation and regeneration of teletext information • Separation of the horizontal and vertical synchroni
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67000-A5162
P-DIP-28
235b05
Q0b33Lj7
S0003
a23SbOS
00b33bfl
P-DIP-28-1
P-DIP-40-1
sda 5241
SDA5241
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3T160
Abstract: ORP10 NT80
Text: 3. 3.1 ELECTRICAL CHARACTERISTICS UPD70335-8, 70335-10 Absolute maxi m u m ratings Pa r a m e t e r Ta=25°C Symbol Test c o n d i t i o n Ratings Unit V DD -0.5 to +7.0 V V TH -0.5 to Vpju+0.5 V VI -0.5 to V D D +0.5 V vO -0.5 to Vjjjj+0.5 V P ower suppl y v o l t a g e
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UPD70335-8,
b427525
DGti332c
UPD70335-8
b427S25
Db3355
LM27SSS
L42752S
00b3357
94-pin
3T160
ORP10
NT80
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BLW90
Abstract: fi37
Text: bSE ]> El 7110ñSb DDb33ñ7 350 « P H I N BLW90 _ PHILIPS INTERNATIONAL _^ U.H.F. P O W E R T R A N SIST O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and
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BLW90
BLW90
fi37
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BLW81
Abstract: IEC134 Vrr-12 philips 2222 807 trimmer philips 2222 808 trimmer
Text: PHILIPS INTERNATIONAL bSE ]> • 711002b DD b3 3S l 4bö ■ PHIN BLW81 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V.
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7Z77164
BLW81
IEC134
Vrr-12
philips 2222 807 trimmer
philips 2222 808 trimmer
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KCC CL-10
Abstract: fprog fprog II SDA2586-5 Q67100-H5101 0b3307
Text: SIEM EN S Nonvolatile Memory 8-Kbit E2PROM with I 2C Bus Interface SDA 2586-5 Preliminary Data MOS 1C Features • Word-organized, reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 1024 x 8-bit organization • Supply voltage 5 V
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Q67100-H5101
E35bOS
KCC CL-10
fprog
fprog II
SDA2586-5
0b3307
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BLW79
Abstract: transistor d 1933 IEC134 L6ss Transistor D 798 33640
Text: PHILIPS INTERNATIONAL bSE 7110Ö5 T> DGt.33DS 215 J PHIN BLW79 U.H.F. POWER TRANSISTOR N-P-N s ilic o n planar e p ita x ia l tra n sisto r intended fo r tra n sm ittin g ap p lic a tio n s in class-A, B o r C in the u.h.f. and v.h.f. range fo r nom inal su p p ly voltages up to 13,5 V . T h e resistance s ta b iliza tio n o f the
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fcj3305
BLW79
1993j
BLW79
transistor d 1933
IEC134
L6ss
Transistor D 798
33640
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Untitled
Abstract: No abstract text available
Text: HS-2510RH HARRIS S E M I C O N D U C T O R Radiation Hardened High Slew Rate Operational Amplifiers August 1995 Features Description High Slew Rate 50V/ns Min , 65V/(is (Typ) • The HS-2510RH is a radiation hardened high performance operational amplifier which set the standard for maximum
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HS-2510RH
HS-2510RH
750kHz
50Mi2
100MQ
BHS7-2510RH
D0L33T0
43G2271
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Untitled
Abstract: No abstract text available
Text: HS-82C 55A R H S ttftis s s Radiation Hardened CMOS Programmable Peripheral Interface September 1995 Features Pinout • Radiation Hardened 40 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T40 TOP VIEW - Total Dose >105 RAD (Si)
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HS-82C
IL-STD-1835
CDIP2-T40
82C55A
HS-80C86RH
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HS3516
Abstract: HS3516RH HS-3516RH HS9-3516RH8 HS9-3516
Text: S3 H ^ ^*0'^ August 1995 S - 3 5 1 6 R H High Slew Rate, Wideband, Radiation Hardened, Operational Amplifier Pinout Features • Radiation Environment 14 LEAD CERAMIC FRIT SEAL CERPACK PACKAGE CERPACK MIL-STD-1835 GDFP5-F14 - Gamma Rate (y) 1 x 109 RAD (Si)/s
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MIL-STD-1835
GDFP5-F14
130ns
12MHz
HS-3516RH
10MHz
IN4002
H3Q2271
0Qb34Dl
HS-3516RH
HS3516
HS3516RH
HS9-3516RH8
HS9-3516
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-21334-2E ASSP Dual Serial Input PLL Frequency Synthesizer MB15F03 • DESCRIPTION The Fujitsu MB15F03 is a serial input Phase Locked Loop PLL frequency synthesizer with a 2.0GHz and a500MHz prescalers. A 64/65 or a 128/129 for the 2.0GHz prescaler, and a 16/17 or a 32/33 for 500MHz prescaler can be
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DS04-21334-2E
MB15F03
MB15F03
a500MHz
500MHz
374S7Sh
0QS334b
FPT-16P-M05)
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Untitled
Abstract: No abstract text available
Text: SIEMENS Nonvolatile Memory 8-Kbit E2PROM with I 2C Bus Interface SDA 2586-5 Preliminary Data MOS 1C Features • Word-organized, reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 1024 x 8-bit organization • Supply voltage 5 V
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Q67100-H5101
0235b05
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hs138
Abstract: No abstract text available
Text: L j A Q E HS-302RH/883S, HS-303RH/883S, HS-306RH/883S, HS-307RH/883S, HS-384RH/883S, HS-390RH/883S p i e Radiation Hardened CMOS Analog Switches September 1995 Features Description • This Circuit is Processed in Accordance to Mil-Std883 and is Fully Conformant Under the Provisions of
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HS-302RH/883S,
HS-303RH/883S,
HS-306RH/883S,
HS-307RH/883S,
HS-384RH/883S,
HS-390RH/883S
HS-3XXRH/883S
00b337T
-302RH/303RH/306RH/307RH/384RH/390RH/883S
1930nm
hs138
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Untitled
Abstract: No abstract text available
Text: 3.3V CMOS OCTAL TRANSPARENT LATCHES IDT54/74FCT3573/A ADVANCE INFORMATION In te g ra te d D e v ic e T e c h n o lo g y , Inc. FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0
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IDT54/74FCT3573/A
MIL-STD-883,
200pF,
FCT3573/A
00233b0
IDT54/74FCT3573/3573A
4A25771
QD233bl
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blw86
Abstract: ferroxcube wideband hf choke BY206
Text: m b5E » 711002b 0Db33Sû SST « P H I N BLW86 _PHILIPS INTERNATIONAL_ j H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is
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711002b.
0Db33SÃ
BLW86
blw86
ferroxcube wideband hf choke
BY206
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BLW89
Abstract: philips resistor CR37 blw89 transistor CR37
Text: PHILIPS INTERNATIONAL bSE D 711002 D 0 b 3 3 7 ,:î 2öM PHIN B LW 89 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and
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00b337cÃ
BLW89
BLW89
7110flSb
00b33Ã
7Z83365
7Z83368
philips resistor CR37
blw89 transistor
CR37
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QML-38535
Abstract: smd marking A26 SCO16-1 N196 qml38535 D966
Text: REVISIONS LTR DESCRIPTIO N DATE YR-M O-DA APPROVED R EV SHEET R EV 16 17 R EV STATUS O F SHEETS PMIC N/A 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 1 2 3 4 5 6 7 8 9 10 11 12 REV SHEET PREPARED BY Thom as M. Hess STANDARD MICROCIRCUIT DRAWING TH IS DRAW ING IS AV AILAB LE
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32BIT
QML-38535.
QML-38535
MIL-HDBK-103.
MIL-HDBK-103
TDG47DÃ
smd marking A26
SCO16-1
N196
qml38535
D966
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d70108
Abstract: NEC d70108 V20 70108 iem-871 nec d70108 nec v20 d70108 mPD70108 D70108 MICRO pD8080AFC uPD70108
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿uP D 7 0 1 0 8 V20 16-/8-BIT MICROPROCESSOR The //PD70108 V20 is a CMOS 16-/8-bit microprocessor. It has a 16-bit architecture and is equipped with a 8-bit data bus. The /iPD70108 has a pow erful instruction set which includes bit processing and packed
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V20TM
16-/8-BIT
uPD70108
16-bit
/PD70108
PD70108
PD70116
d70108
NEC d70108 V20
70108
iem-871
nec d70108
nec v20 d70108
mPD70108
D70108 MICRO
pD8080AFC
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nmc27c256
Abstract: NMC27C256Q NMC27C256Q250 NMC27C256QE NMC27C256Q25 national semiconductor 27c32 NMC27C256Q200 NMC27C256Q20 J28A NMC27C256Q 200
Text: NAT L S E MI C O N D MEMORY 31E b 5 G l 1 2 h Gü b 3 3 7 3 D T NMC27C256 National Semiconductor NMC27C256 262,144-Bit (32k x 8) UV Erasable CMOS PROM General Description Features The NMC27C256 is a high-speed 256k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited
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NMC27C256
NMC27C256
144-Bit
NMC27C266
28-pln
NMC27C256Q
NMC27C256Q250
NMC27C256QE
NMC27C256Q25
national semiconductor 27c32
NMC27C256Q200
NMC27C256Q20
J28A
NMC27C256Q 200
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NMC27C256BQ
Abstract: NMC27C256BQ200 27C64 EPROM programmer ND06 27C256BQ NMC27C256B NMC27C256
Text: NMC27C256B NATL SEMICOND MEMORY 31E D • tSDllSb GDb33öl Q PRELIMINARY National Semiconductor NMC27C256B High Speed Version 262,144-Bit (32k x 8) UV Erasable CMOS PROM General Description Features The NMC27C256B Is a high-speed 256k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited
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NMC27C256B
GDb33
NMC27C256B
144-Bit
28-pin
NMC27C256BQ
NMC27C256BQ200
27C64 EPROM programmer
ND06
27C256BQ
NMC27C256
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slo syn HS 50
Abstract: No abstract text available
Text: £ S h iA R R HS-82C85RH IS S E M I C O N D U C T O R Radiation Hardened CMOS Static Clock Controller/Generator August 1995 Features Pinouts • Radiation Hardened - Total Dose > 105 RAD Si) - Transient Upset > 108 RAD (Si)/s - Latch Up Free EPI-CMOS • Very Low Power Consumption
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HS-82C85RH
IL-STD-1835
CDIP2-T24
82C85
15MHz
HS-82C85RH
CLK50
00b33t
3130nm
slo syn HS 50
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