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    74LS139PC

    Abstract: 74LS139P 74LS139DC
    Text: ;'1 NATIONAL SEMICOND -CLO.GIO OSE D | bSDllPS 00b3fll? D | 139 139 T-66-21-55 CONNECTION DIAGRAM P IN O U T 54S/74S139 54LS/74LS139 A o a [I i s ] Eb A la [ 7 Î 7 ] Aob Öoa [ T 75] 1 2 ]Ö 0 b Ö 2a [ ? T ijö ib Ô 3 a [T 10] 5 2 b [? ~9~1 0 3 b DESCRIPTION — The *139 is a high speed dual t-of-4 decoder/demulti­


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    PDF 00b3fll? 54S/74S139 54LS/74LS139 T-66-21-55 bS01155 54/74LS 54/74S 74LS139PC 74LS139P 74LS139DC

    BUK436-60A

    Abstract: BUK436-60B buk436 7N11 V6-S
    Text: PHILIPS INTERNATIONAL b5E » • 7110fi2b 00b3fl^l 3>^b ■ P H I N Philips Semiconductors Product Specification PowerMOS transistor N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    PDF 7110fi2b BUK436-60A/B BUK436 711Dfi2b BUK436-60A/B BUK436-60A BUK436-60B 7N11 V6-S

    K4175

    Abstract: BC 148 TRANSISTOR PIN CONFIGURATION buk417-500ae transistor BC 147 sf 128 transistor BUK417-500B BUK417-500BE transistor bc 148 BC 148 transistor bc 147 B transistor
    Text: PH ILIP S I NTE RN ATI ON AL bSE D H 7 1 1 0 6 2 b 00b3flfib T5^ « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in IS O T O P envelope. The device is intended for use in


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    PDF 711DflSb BUK417-500AE/BE OT227B BUK417 -500AE -500BE BUK417-500AE K4175 BC 148 TRANSISTOR PIN CONFIGURATION buk417-500ae transistor BC 147 sf 128 transistor BUK417-500B BUK417-500BE transistor bc 148 BC 148 transistor bc 147 B transistor

    BUK416-100AE

    Abstract: BUK416-100BE BUK416-100AE,BE buk418 BUK416-1OOAE transistor 2TH
    Text: PHILIPS INTERNATIONAL bSE D H 7110SBb 00b3fl7b DAT • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in


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    PDF 7110SBb 00b3fl7b BUK416-100AE/BE OT227B BUK416 -100AE -100BE BUK416-1OOAE/BE BUK41B-100//E BUK416-100AE BUK416-100BE BUK416-100AE,BE buk418 BUK416-1OOAE transistor 2TH

    BUK104-50L

    Abstract: BUK104-50S BUK104-50US
    Text: PHILIPS bSE INTERNATIONAL D • 711002b D 0 b 3 f l43 Monolithic temperature and overloadprotected logic level power MOSFET in a 5 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications. APPLICATIONS General controller for driving


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    PDF 711002b D0b3fl43 BUK104-50L/S BUK104-50LP/SP pK104-50L/S Ips/lps25 BUK104-60L/S BUK104-50L BUK104-50S BUK104-50US

    transil 428

    Abstract: No abstract text available
    Text: SGS-THOMSON M ^©iy! gïïM KiO(gi sm4T6V8, A/220, a SM4T6V8C,CA/220C,CA TRANSIL FEATURES . PEAK PULSE POWER= 400 W @ 1ms. • BREAKDOWN VOLTAGE RANGE : From 6V8 to 220 V. ■ UNI AND BIDIRECTIONAL TYPES. . LOW CLAMPING FACTOR. ■ FAST RESPONSE TIME: Tclamping : 1ps (0 V to VBR).


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    PDF CA/220C transil 428

    BUK436-60A

    Abstract: 134 T31 100-P BUK436-60B
    Text: PHILIPS INTERNATIONAL bSE D • 711D6Sb 00t.3flTl 3^b ■ P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode iield-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF 711D6Sb BUK436-60A/B BUK436 drai11062b BUK436-60A 134 T31 100-P BUK436-60B

    lem HA

    Abstract: BUK102-50GL IEC134 T0220AB
    Text: PHILIPS INTERNATIONAL bSE D • 7110fl2ti DDbBflPS PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.


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    PDF 7110A2b BUK102-50GL lem HA IEC134 T0220AB

    D482445LGW-A70

    Abstract: cwi 1011
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT /¿PD482444, 482445 4M-Bit Dual Port Graphics Buffer 256K-WORD BY 16-BIT D escrip tio n The /iPD482444 and ^PD482445 have a random access port and a serial access port. The random access port has a 4M-bit 262, 144 words x 16 bits memory cell array structure. The serial access port can perform clock


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    PDF PD482444, 256K-WORD 16-BIT /iPD482444 PD482445 iPD482445 008t8oo2 020tg bM27525 00b3flD D482445LGW-A70 cwi 1011

    100PD

    Abstract: BUK102-50GS T0220AB
    Text: PHILIPS INTERNATIONAL bSE D • 7 1 1 0 0 2 b 0DL.3Ö3M bSO « P H I N Philips Semiconductors Product Specification PowerMOS transistor TOPFET DESCRIPTION BUK102-50GS QUICK REFERENCE DATA Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended


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    PDF 7110fl2t K102-50GS lISL/lISL25rC BUK102-SQGS 100PD BUK102-50GS T0220AB

    PD481850GF

    Abstract: D481850
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD 481850 8M-bit Synchronous GRAM Description The iiPD481850 is a synchronous graphics memory SGRAM organized as 131,072 words x 32 bits x 2 banks random access port. This device can operate up to 100 MHz by using synchronous interface. Also, it has 8-column Block Write function


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    PDF uPD481850 100-pin -613i8 -787io S1000F-W-JBT b4E7525 DDb3T73 pPD481850. /1PD481850GF-JBT: PD481850GF D481850

    Untitled

    Abstract: No abstract text available
    Text: u ~ CDP68HC05C4, CDP68HC05C8, CDP68HCL05C4, CDP68HCL05C8, CDP68HSC05C4, CDP68HSC05C8 8-Bit Microcontroller Series October 1995 The following are some of the hardware and software highlights of the CDP68HC05C4 family of HCMOS Micro­ computers. Hardware Features All Types


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    PDF CDP68HC05C4, CDP68HC05C8, CDP68HCL05C4, CDP68HCL05C8, CDP68HSC05C4, CDP68HSC05C8 CDP68HC05C4 CDP68HSC05C4

    GLS-1

    Abstract: BUK105-50L BUK105-50S BUK105-50US transistor 3BU
    Text: PHILIPS INTERNATIONAL b5E D B 711DSSb 0ab3flSH Philips Sem iconductors PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general purpose switch for automotive


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    PDF 711DSSb BUK105-50L/S BUK105-50LP/SP BUK105-50US lPS/lPS25 GLS-1 BUK105-50L BUK105-50S BUK105-50US transistor 3BU

    BUK105-50L

    Abstract: BUK105-50S BUK105-50US
    Text: PH I L I P S I N T E R N A T I O N A L bSE D B 711GÖSb DGL3ÖSH Philips Semiconductors 41=1 « P H I N Product Spécification PowerMOS transistor BUK105-50L/S Logic level DESCRIPTION Monolithic temperature and


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    PDF 711DSSb BUK105-50L/S BUK105-50LP/SP 711D62b buk105-50us BUK105-50L BUK105-50S

    BUK102-50DL

    Abstract: T0220AB
    Text: PHILIPS INTERNATIONAL t.SE T> WM 711062b D0b3fll7 SHI • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK102-50DL Logic level DESCRIPTION Monolithic temperature and overloadprotected logic level power


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    PDF 711062b BUK102-50DL /llso25-C liSt/lISL25 BUK102-50DL T0220AB

    FLG22

    Abstract: BUK101-50GL T0220AB 100R01
    Text: PHILIPS INT ERNATIONAL b5E D • 7110A2b D0t.37cn Philips Semiconductors 7Tb ■ PHIN Product Specification PowerMOS transistor BUK101-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power


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    PDF 711002b 00b37TÃ BUK101-50GL yils25-C FLG22 BUK101-50GL T0220AB 100R01

    D482234

    Abstract: No abstract text available
    Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT //PD482234, 482235 2M-Bit Dual Port Graphics Buffer 256K-WORD BY 8-BIT D escription The jiPD482234 and /iPD482235 have a random access port and a serial access port. The random access port has a 2M-bit 262,144 words x 8 bits memory cell array structure. The serial access port can perform clock operations


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    PDF uPD482234 uPD482235 256K-WORD jiPD482234 /iPD482235 /tPD482235 PP482234. b427525 00b3flfl3 UPD482234. D482234

    D482234

    Abstract: D482234G5-70 d482235le D482235 icc20 sis 735 k7 TNC 24 mk 2 d482235g5-60 SES N 2402
    Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT //PD482234, 482235 2M-Bit Dual Port Graphics Buffer 256K-WORD BY 8-BIT D escription The jiPD482234 and /iPD482235 have a random access port and a serial access port. The random access port has a 2M-bit 262,144 words x 8 bits memory cell array structure. The serial access port can perform clock operations


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    PDF uPD482234 uPD482235 256K-WORD jiPD482234 /iPD482235 /tPD482235 PP482234. b427525 00b3flfl3 UPD482234. D482234 D482234G5-70 d482235le D482235 icc20 sis 735 k7 TNC 24 mk 2 d482235g5-60 SES N 2402

    Untitled

    Abstract: No abstract text available
    Text: CMM-4 2.0 to 20.0 GHz GaAsMMIC Amplifier □ Flat Gain □ +16 dBm P .j dB □ Small Size: 39 x 74 mils □ Directly Cascadable □ Self-Biased □ Single Power Supply □ Guaranteed Performance Celeritek CMM-4 GaAs MMIC Amplifier T h e C M M -4 is a 2 to 20 G H z G aA s M M IC am p lifier.


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    PDF 16dBmP 1T745G3

    74LS153PC

    Abstract: pin DIAGRAM OF IC 74153 TEA 6621 ic 74153 Multiplexer pin diagram ic 74153 ic 74153 Multiplexer so 54 t ic 74153 pin configuration L5013 pin diagram of ic 74ls153
    Text: NATIONAL SEfUCOND { L O G I C } 05E D | bSDUEa _ 00L.3Ö33 Ö T-66-21-S3 _ CO N N ECTIO N DIAGRAM PINOUT A 54/74153 54S/74S153 54LS/74LS153 D U A L 4 -IN P U T M U L T IP L E X E R 1 la D ESCRIPTIO N — The '153 is a high speed dual 4-input multiplexer with com­


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    PDF T-66-21-S3 54S/74S153 54LS/74LS153 54/74S 54/74LS 74LS153PC pin DIAGRAM OF IC 74153 TEA 6621 ic 74153 Multiplexer pin diagram ic 74153 ic 74153 Multiplexer so 54 t ic 74153 pin configuration L5013 pin diagram of ic 74ls153