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    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 3 DRAIN N -C h an n el — Enhancem ent 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Vdc V d SS 240 Drain-Gate Voltage V d GR 60 Vdc Gate-Source Voltage - Continuous - Non-repetitive tp < 50 [is


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    PDF VN2410L 25Vdc, 00T377S