GaN amplifier
Abstract: GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPT25100 NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation
Text: APPLICATION NOTE AN-013 GaN Essentials AN-013: Broadband Performance of GaN HEMTs NITRONEX CORPORATION 1 MAY 2009 APPLICATION NOTE AN-013 GaN Essentials: Broadband Performance of GaN HEMTs 1. Table of Contents 1. TABLE OF CONTENTS. 2
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AN-013
AN-013:
NPTB00004
12-Watt
NPT25100
MRF6S9125
GaN amplifier
GaN amplifier 100W
GaAs HEMTs X band
25W Amplifier Research
NPTB00050
high power fet amplifier schematic
an-013 nitronex
Amplifier Research rf power amplifier schematic
broadband impedance transformation
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xemod
Abstract: QPP-013
Text: QPP-013 35W, 869-894MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-013 QuikPAC RF power module is a Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power transistors are
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QPP-013
869-894MHz
QPP-013
H10535)
H10890)
xemod
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ks 213 b
Abstract: AMD fm2 Pin Package IC818 LCD 1620 uPD1723 LCD KS 108 PD1723GF-013 LCD 1620 datasheet LCD display 1602 car radio 14x20
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD1723GF-013, µPD1723GF-213 PLL FREQUENCY SYNTHESIZER AND CONTROLLER FOR FM/MW/LF TUNER CAR AUDIO The µPD1723GF-013 and µPD1723GF-213 are CMOS LSI developed for worldwide PLL frequency synthesizer FM/MW/LW tuner use.
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PD1723GF-013,
PD1723GF-213
PD1723GF-013
PD1723GF-213
64-pin
ks 213 b
AMD fm2 Pin Package
IC818
LCD 1620
uPD1723
LCD KS 108
LCD 1620 datasheet
LCD display 1602
car radio 14x20
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jedec package MO-220 QFN-32
Abstract: ST2221C DM134 DM135 DM136 QFN32 SSOP24
Text: DM134DM135、DM136 Version : A.013 Issue Date : 2006/8/1 File Name : SP-DM134,135,136-A.013.doc Total Pages : 20 16-Bit Constant Current LED Drivers 新竹市科學園區展業一路 9 號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 9-7F-1, Prosperity Road I, Science Based Industrial Park,
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DM134DM135DM136
SP-DM134
16-Bit
Fax886-3-5645626
Tel886-3-5645656
DM134DM135DM136
jedec package MO-220 QFN-32
ST2221C
DM134
DM135
DM136
QFN32
SSOP24
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Untitled
Abstract: No abstract text available
Text: SEN012-013 SENZero Family Zero1 Loss High Voltage Sense Signal Disconnect IC Product Highlights Features and Performance • Eliminates signiicant standby losses • Disconnects unnecessary circuit blocks during standby, remote-off, or light-load conditions
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SEN012-013
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SEN013
Abstract: rm 6203 SEN012-013 topswitch pfc SEN012 SEN012D pfc ic 2N3906RA kose
Text: SEN012-013 SENZero Family Zero1 Loss High Voltage Sense Signal Disconnect IC Product Highlights Features and Performance • Eliminates significant standby losses • Disconnects unnecessary circuit blocks during standby, remote-off, or light-load conditions
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SEN012-013
SEN013
rm 6203
SEN012-013
topswitch pfc
SEN012
SEN012D
pfc ic
2N3906RA
kose
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Untitled
Abstract: No abstract text available
Text: SEN012-013 SENZero Family Zero1 Loss High Voltage Sense Signal Disconnect IC Product Highlights Features and Performance • Eliminates significant standby losses • Disconnects unnecessary circuit blocks during standby, remote-off, or light-load conditions
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SEN012-013
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TRANSISTOR S2A
Abstract: 1N916 MMBT3906W transistor SOT23 YC 30 TRANSISTOR MARKING YC
Text: MMBT3906W PNP GENERAL PURPOSE SWITCHING TRANSISTOR Voltage Range 40 Volts Power 150 Watts Features SOT-23 DO-41 .103 2.60 .056(1.40) .047(1.20) .119(3.00) .110(2.80) Mechanical Data 3 COLLECTOR .006(.15)MAX .020(.50) .013(.35) 1 BASE 1 Base 2 Emitter .006(.15)
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MMBT3906W
OT-23
DO-41
OT-323,
MIL-STD-202,
TRANSISTOR S2A
1N916
MMBT3906W
transistor SOT23 YC 30
TRANSISTOR MARKING YC
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FR-Z024
Abstract: FR-PU01 FR-PU01E inverter fr-z Z024S FR-Z024S-0 VARISTOR thm freqrol fr-z024-s037k FR-Z024S-1
Text: Issued July 1992 013-854 Data Pack B Z024S transistor inverter Data Sheet Supplied by Mitsubishi Electric UK Ltd RS stock no. Mitsubishi part no. 0.37kW 718-767 FR-Z024S-0.37 0.75kW 718-773 FR-Z024S-0.75 1.5kW 718-789 FR-Z024S-1.5 2.2kW 718-795 FR-Z024S-2.2
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Z024S
FR-Z024S-0
FR-Z024S-1
FR-Z024S-2
FR-AU01
FR-PU01E
FR-Z024
FR-PU01
FR-PU01E
inverter fr-z
VARISTOR thm
freqrol
fr-z024-s037k
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X2006A
Abstract: carry skip adder 2-bit half adder 2-bit half adder layout function generator X2004 XC4000E parallel prefix adder definition
Text: APPLICATION NOTE XAPP 013 July 4, 1996 Version 2.0 Using the Dedicated Carry Logic in XC4000E Application Note By BERNIE NEW Summary This Application Note describes the operation of the XC4000E dedicated carry logic, the standard configurations provided
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XC4000E
XC4000E
XC4000E,
XC4000L
X2006A
carry skip adder
2-bit half adder
2-bit half adder layout
function generator
X2004
parallel prefix adder definition
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PH-013
Abstract: GH-040-2
Text: Data Sheet 27609.15a 3195 X PROTECTED, HIGH-TEMPERATURE, HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN VCC LATCH 3 OUTPUT 2 GROUND SUPPLY 1 Dwg. PH-013 Pinning is shown viewed from branded side. ABSOLUTE MAXIMUM RATINGS Supply Voltage, VCC 100 ms . 115 V*
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A3195
MH-003E
PH-013
GH-040-2
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2SA1013
Abstract: transistor 2sa1013 power ic of lg tv 2SC2383 A101
Text: 2SA1013 TOSHIBA 2 S A 1 013 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS COLOR TV VERT. DEFLECTION OUTPUT APPLICATIONS. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS. • • • • High Voltage : V q ^O = —160V Large Continuous Collector Current Capability.
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2SA1013
--160V
2SC2383.
2SA1013
transistor 2sa1013
power ic of lg tv
2SC2383
A101
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SA1013 2 S A 1 013 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS COLOR TV VERT. DEFLECTION OUTPUT APPLICATIONS. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS. • • • High Voltage : V q e O = —160V Large Continuous Collector Current Capability.
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2SA1013
2SC2383.
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MPD1703C-013
Abstract: MPD1703C-01 FIP6E6 am radio station block diagram TUNING FM RADIO RECEIVER MPB553AC mPD1703 F14C SS53 12 VDC seven segment indicator
Text: MOS DIGITAL INTEGRATED CIRCUIT /¿PD1703C-013 P H A S E L O C K E D L O O P F R E Q U E N C Y S Y N T H E S IZ E R F M /A M D IG IT A L T U N IN G S Y S T E M C O N T R O L L E R C M O S LSI The nPD1703C-013 is a single chip CMOS controller designed for using as a Phase Locked Loop
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uPD1703C-013
iiPD1703C-013
MPB553AC
MPD1703C-013
HC-18/U
TQC-231À
2SA733
OF14C
juPC78L05
MPD1703C-013
MPD1703C-01
FIP6E6
am radio station block diagram
TUNING FM RADIO RECEIVER
MPB553AC
mPD1703
F14C
SS53
12 VDC seven segment indicator
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FIL-3C
Abstract: to-92 mosfet 13T13
Text: SÖE » SEP1TECH CORP • 013^13^ ODOBTìl OSO POWER MOSFET IN HERMETIC ISOLATED T0257AB PACKAGE SM8F13* SM8F33* SM8F23* SM8F43* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low
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T0257AB
SM8F13*
SM8F33*
SM8F23*
SM8F43*
T0258AA
FT0258AA
HDS100
FIL-3C
to-92 mosfet 13T13
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2SA1013
Abstract: transistor 2sa1013 lg tv system ic 2SC2383 power ic of lg tv
Text: 2SA1013 TO SH IBA 2 S A 1 013 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm COLOR TV VERT. DEFLECTION OUTPUT APPLICATIONS COLOR TV CLASS B SOUND OUTPUT APPLICATIONS • • • • High Voltage : V 0E q = —160V Large Continuous Collector Current Capability.
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2SA1013
--160V
2SC2383.
2SA1013
transistor 2sa1013
lg tv system ic
2SC2383
power ic of lg tv
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infrared sensor with pic
Abstract: No abstract text available
Text: H0A1886 Transmissive Sensor DESCRIPTION The HOA1886 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1886-O11, -012 or photodarlington (HOA1886-013) encased in a black thermoplastic housing with IR transmissive inserts which form the
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H0A1886
HOA1886
HOA1886-O11,
HOA1886-013)
infrared sensor with pic
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H0A1874
Abstract: No abstract text available
Text: H0A1874 Transmissive Sensor DESCRIPTION The HOA1874 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1874-001, -002, -011, -012 or photodarlington (HOA1874-003, -013) encased in a black thermoplastic housing. Detector switching takes place
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H0A1874
HOA1874
HOA1874-001,
HOA1874-003,
HOA1874-011
SE1450,
SD1440,
SD1410,
SEP8506,
H0A1874
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sa1013
Abstract: 2SA1013 transistor 2sa1013 2SC238 2SA1013-0 2SC2383 A101 2SA101 lg tv system ic 2SA10130
Text: 2SA1013 TO SH IBA 2 S A 1 013 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm COLOR TV VERT. DEFLECTION OUTPUT APPLICATIONS. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS. 5.1 MAX High Voltage : V 0E q = —160V Large Continuous Collector Current Capability.
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2SA1013
--160V
2SC2383.
sa1013
2SA1013
transistor 2sa1013
2SC238
2SA1013-0
2SC2383
A101
2SA101
lg tv system ic
2SA10130
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transistor for horizontal deflection output
Abstract: bu109
Text: BU109 NPN POWER TRANSISTOR High Voltage, High Speed Transistor for Horizontal Deflection Output Stages of TV's and CRT's Applications 013 DIM A B C D E F G H J K L M MIN MAX 39.37 22,22 8,50 6,35 1.09 0,96 .1,77 29,90 30,4 10,69 11,18 5,72 5,20 16,64 17,15
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BU109
300ps;
transistor for horizontal deflection output
bu109
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H0A1874
Abstract: HOA1874-002
Text: H0A1874 Transmissive Sensor DESCRIPTION OUTLINE DIMENSIONS in inches mm The HOA1874 series consists of an infrared emitting diode facing an NPN silicon phototransistor (HOA1874-001, -002, -011, -012) or photodarlington (HOA1874-003, -013) encased in a black thermoplastic
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H0A1874
HOA1874
HOA1874-001,
HOA1874-003,
HOA1874-011
SE1450,
SD1440,
SD1410,
SEP8506,
H0A1874
HOA1874-002
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Abstract: No abstract text available
Text: HOA1884 Transmissive Sensor INFRA-75.TIF DESCRIPTION The HOA1884 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1884-011, -012 or photodartington (HOA1884-013) encased in a black thermoplastic housing. Detector switching takes place whenever an
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HOA1884
HOA1884-011,
HOA1884-013)
SEP8506,
SDP8406,
SDP8106.
0G2E704
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S421
Abstract: No abstract text available
Text: SENTECH CORP SÖE D 013^13^ 20 AMP SYNCHRONOUS RECTIFIER 0003433 b2T SBS421 ABSOLUTE MAXIMUM RATINGS PARAMETER • Second source to UBS421 • Low Voltage Drop, Typically 0.3V @ 20A • Very Low On.Reslstance, Typically 14m Ohms • High Reserve Blocking VECS = 40V
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SBS421
UBS421
S421
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T0254AA
Abstract: No abstract text available
Text: 013^13^ 0 0 0 2 ^ 5 7Tb SflE D SEMTECH CORP POWER MOSFET IN HERMETIC ISOLATED T0254AA PACKAGE SM2F151* SM2F351* SM2F251* SM2F451* These devices offer the latest ruggedized M O SFET transistor die mounted in isolated and hermetically sealed metal packages. The standard M O SFET characteristics of very low
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T0254AA
SM2F151*
SM2F351*
SM2F251*
SM2F451*
T0254AA
T0258AA
FT0258AA
HDS100
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