XA2 MMIC

Abstract: TOP MARKING C1 ROHM lot No MPO-100136 SIRENZA Sirenza C4 marking
Contextual Info: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

1485C

Abstract: SE 194 Sirenza amplifier SOT-89
Contextual Info: Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

Contextual Info: CND, C N K S eries Wire Wrap and Round Tail Dip Solder Term inations SPECIFICATIONS ELECTRICAL Phenolic, glass reinforced per MIL-M-14, type MFH, U.L. 94V-0 approved, color black Thermoplastic Polyester, glass rein­ forced, U.L. 94V-0 approved, color black

Xa3 TRANSISTOR

Abstract: 041R 267M3502104 MCH18 SXA-389 MMIC "SOT 89" marking
Contextual Info: Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

MCH18

Abstract: SXA-389B xa3b EL115
Contextual Info: Preliminary Product Description SXA-389B Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular

F103Z CAPACITOR

Abstract: b221k B221K capacitor
Contextual Info: アキシャルリード形セラミックコンデンサ AXIAL LEADED CERAMIC CAPACITORS OPERATING TEMP. −25~＋85℃ 特長 FEATURES ・汎用型セラミックコンデンサで単層形と積層形合わせて1pF∼10 Fと 広い容量範囲で部品の標準化が可能

xa3b

Contextual Info: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent

XA2 MMIC

Abstract: MPO-100136 TOP MARKING C1 ROHM lot No
Contextual Info: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

Contextual Info: JN D , J N K , S eries W ire W rap an d R ound T ail Dip S o ld e r T e rm in a tio n s SPECIFICATIONS ELECTRICAL Phenolic, glass reinforced per MIL-M-14, type MFH, U.L. 94V-0 approved, color black Thermoplastic Polyester, glass rein­ forced, U.L. 94V-0 approved, color black

Contextual Info: ELECTRICAL C H A RA CTERISTICS: Turns Ratio: chip-line 1:2.3±2% @ 100kHz,50mV Inductance: 1-5 with 2-4 short 1.76mH ±10% @ 100kHz,0.1V Longitudinal Balance: >43dB @ 20kHz to 400kHz THD: 10kHz 77dB Min @ 10KHz,4.95Vrms DC Resistance: 7-9,4-1,5-2 0.60 Ohms Msx @ 25°C

F103Z CAPACITOR

Abstract: CAPACITOR B102K 50V UP025 B331K b102k b103k B222M UP050B103K B561K b152k
Contextual Info: アキシャルリード形セラミックコンデンサ AXIAL LEADED CERAMIC CAPACITORS OPERATING TEMP. −25~＋85℃ 特長 FEATURES ・汎用型セラミックコンデンサで単層形と積層形合わせて1pF∼10 Fと 広い容量範囲で部品の標準化が可能

267M3502104K

Abstract: 2425-C
Contextual Info: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with

RF AMP marking c7 sot-89

Abstract: marking 25 mmic sot-89 9C0603 ordering Sirenza amplifier SOT-89 Marking
Contextual Info: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with

f103z

Abstract: B102K F104Z B391K CH431 TP050 PF-100000 UP050
Contextual Info: アキシャルリード形セラミックコンデンサ AXIAL LEADED CERAMIC CAPACITORS OPERATING TEMP. −25~＋85℃ 特長 FEATURES ・汎用型セラミックコンデンサで単層形と積層形合わせて1pF∼10 Fと 広い容量範囲で部品の標準化が可能

Contextual Info: ELECTRICAL C H A RA CTERISTICS: Turns Ratio: chip-line 1:2±2% @ 100kHz,50mV Inductance: 1-5 with 2-4 short 1.76mH ±10% @ 100kHz,100mV Longitudinal Balance: >50dB @ 20kHz to 600kHz THD: 10kHz 77dB Min @4.95Vrms DC Resistance: 7-9,4-1,5-2 0.60 Ohms Max @ 25°C