041R Search Results

880-041R

Contextual Info: SERIES 880 Quick Disconnect 880-041R Rear Panel Mount, PCB Receptacle with Mounting Holes Series 880 Quick-Disconnect QDC rear panel mount, PCB receptacles with mounting holes are sealed with epoxy and meet IP67 requirements in mated condition. For open face sealing in an unmated condition request modification

1-B99

Contextual Info: 51.56 *>•-* 2'03° 7.3 P0SJ1 .4- R 1 .0 4 (.041R} 48.23 t0.2(1-B99) o (N LOl i in CO oo BB E] jftwr 0 .6 3 5 (-025) i I II I II I II I II il'l'l'l'l'l I'l'l'l'l'l! (1.675) 0 .6 3 5 x (6 8 —0 = 4 2 .5 4 5 o o<N- CABLE 4 9 .2 2 H O U S IN G K ( 1-938 )

XA2 MMIC

Abstract: TOP MARKING C1 ROHM lot No MPO-100136 SIRENZA Sirenza C4 marking
Contextual Info: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

Sirenza amplifier SOT-89 Marking

Abstract: .XA2
Contextual Info: Not Recommended for New Designs Product Description SXH-189 Sirenza Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth

1485C

Abstract: SE 194 Sirenza amplifier SOT-89
Contextual Info: Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

6AD5

Contextual Info: Features * Single 4.5V - 5.5V Supply * Serial Interface Architecture * Page Program Operation - Single Cycle Reprogram Erase and Program - 2048 Pages (264 Bytes/Page) Main Memory * Two 264-byte SRAM Data Buffers - Allows Receiving of Data while Reprogramming of

Xa2 TRANSISTOR

Abstract: XA2 MMIC SXA-289 Sirenza amplifier SOT-89 marking XA2 EDS-100622 RF transistor marking IN SOT-89 sxa289 TOP MARKING C1 ROHM ROHM SOT89 MARKING
Contextual Info: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

Xa2 TRANSISTOR

Abstract: transistor 289 MMIC "SOT 89" marking SXA-289 rf power amplifier 850 MHZ
Contextual Info: Preliminary Product Description Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

SXT-289

Abstract: transistor 289 marking 25 mmic sot-89 MMIC "SOT 89" marking Xa2 marking Xa2 TRANSISTOR xamp 034 XA2 MMIC
Contextual Info: Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth

marking 25 mmic sot-89

Abstract: RF transistor marking IN SOT-89 MARKING 30 SOT89 DBM
Contextual Info: Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth

Xa3 TRANSISTOR

Abstract: 041R 267M3502104 MCH18 SXA-389 MMIC "SOT 89" marking
Contextual Info: Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

MCH18

Abstract: SXA-389B xa3b EL115
Contextual Info: Preliminary Product Description SXA-389B Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular

xa3b

Contextual Info: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent

XA2 MMIC

Abstract: MPO-100136 TOP MARKING C1 ROHM lot No
Contextual Info: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

267M3502104K

Abstract: 2425-C
Contextual Info: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with

Xa3 TRANSISTOR

Abstract: matsuo
Contextual Info: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

RF AMP marking c7 sot-89

Abstract: marking 25 mmic sot-89 9C0603 ordering Sirenza amplifier SOT-89 Marking
Contextual Info: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with

Contextual Info: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

audio system ads 5002

Abstract: mini ups project RA8E 5kv 15j 74 A03413 82855gme 2N7D02 mini ups project file gds c50 1NTC
Contextual Info: *> ¿ W A, -i. w * V SMBUS DIAGRAM SYSTEM BLOCK DIAGRAM TTDr1 DDR SO - DIMM X 2 DDR 333/266 BATTERY INTEL CPU ULV Pentium-M 753/733/723 ULV Celeron-M (373/353) UBGA478 THERMAL SENSOR 4 0 0 M HZ F S B 1st IDE BUS MASTER GMCH-GME/GM DAC Intel 82855GME/GM FC - BGA732

IRL1530G

Abstract: irf1740g IRF1820G f840lc 1RF1644G 1820G 82068 RF540N lm 6806 lm 6806 A
Contextual Info: HU men I n t e r n a t i o n a l R e c t if ie r Index Part Number Page Number Fax-onPrint Demand Literature Number Reference* 100JB 05L - 100J B 16L 104M T 80K - 104M T 160K 10B F 10- 10B F 20 10B F 40 10B F 60 10B F 80 10B Q 015 10B Q 040 11 35 81 81 81