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    SXA289 Search Results

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    SXA289 Price and Stock

    SIRENZA MICRODEVICES INC SXA-289

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SXA-289 135
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    SIRENZA MICRODEVICES INC SXA-289-BLK

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SXA-289-BLK 135
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    Sirenza Microdevices SXA-289

    Microwave Amplifier, Single, 3 Pin, Plastic, TO-243
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SXA-289 130
    • 1 $4
    • 10 $4
    • 100 $2
    • 1000 $2
    • 10000 $2
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    SXA-289 36
    • 1 $9.9
    • 10 $7.26
    • 100 $6.6
    • 1000 $6.6
    • 10000 $6.6
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    NexGen Digital SXA-289 1
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    Stanford Electronics SXA-289

    Microwave Amplifier, Single, 3 Pin, Plastic, TO-243
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SXA-289 73
    • 1 $9.9
    • 10 $9.9
    • 100 $6.105
    • 1000 $6.105
    • 10000 $6.105
    		Buy Now

    SXA289 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SXA-289 Sirenza Microdevices 5-2000 MHz Medium Power GaAs HBTAmplifier Original PDF
    SXA-289 Stanford Microdevices 5-2000 MHz medium power GaAs HBT amplifier Original PDF

    SXA289 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    XA2 MMIC

    Abstract: TOP MARKING C1 ROHM lot No MPO-100136 SIRENZA Sirenza C4 marking
    Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable


    Original     		PDF SXA-289 SXA-289 MPO-100136 016REF 118REF 041REF 015TYP EDS-100622 XA2 MMIC TOP MARKING C1 ROHM lot No SIRENZA Sirenza C4 marking

    Sirenza amplifier SOT-89 Marking

    Abstract: .XA2
    Text: Not Recommended for New Designs Product Description SXH-189 Sirenza Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth


    Original     		PDF SXH-189 SXH-189 SXA-289 016REF 118REF 041REF EDS-101247 Sirenza amplifier SOT-89 Marking .XA2

    XA2 MMIC

    Abstract: Xa2 TRANSISTOR
    Text: Preliminary Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular


    Original     		PDF SXA-289 SXA-289 EDS-100622 XA2 MMIC Xa2 TRANSISTOR

    Xa2 TRANSISTOR

    Abstract: XA2 MMIC SXA-289 Sirenza amplifier SOT-89 marking XA2 EDS-100622 RF transistor marking IN SOT-89 sxa289 TOP MARKING C1 ROHM ROHM SOT89 MARKING
    Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable


    Original     		PDF SXA-289 SXA-289 016REF 118REF 041REF EDS-100622 Xa2 TRANSISTOR XA2 MMIC Sirenza amplifier SOT-89 marking XA2 RF transistor marking IN SOT-89 sxa289 TOP MARKING C1 ROHM ROHM SOT89 MARKING

    Xa2 TRANSISTOR

    Abstract: transistor 289 MMIC "SOT 89" marking SXA-289 rf power amplifier 850 MHZ
    Text: Preliminary Product Description Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable


    Original     		PDF SXA-289 016REF 118REF 041REF EDS-100622 Xa2 TRANSISTOR transistor 289 MMIC "SOT 89" marking rf power amplifier 850 MHZ

    ze 003 driver

    Abstract: SXA-289-TR1 ze 003 SXA-289
    Text: Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which


    Original     		PDF SXA-289 SXA-289 EDS-100622 ze 003 driver SXA-289-TR1 ze 003

    SXA-289

    Abstract: No abstract text available
    Text: Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces


    Original     		PDF SXA-289 SXA-289 EDS-100622

    SXA 900 MHz

    Abstract: SXA-289 SXL-189-EB SXL-189-TR1 SXL-189-TR2
    Text: Preliminary Product Description SXL-189 Stanford Microdevices’ SXL-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces


    Original     		PDF SXL-189 SXL-189 110mA 1000pF 100pF SXA-289 SXA 900 MHz SXA-289 SXL-189-EB SXL-189-TR1 SXL-189-TR2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SXL-189 Stanford Microdevices’ SXL-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces


    Original     		PDF SXL-189 SXL-189 1000pF 100pF 100pF 110mA SXA-289

    XA2 MMIC

    Abstract: MPO-100136 TOP MARKING C1 ROHM lot No
    Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable


    Original     		PDF SXA-289 SXA-289 MPO-100136 016REF 118REF 041REF 015TYP EDS-100622 XA2 MMIC TOP MARKING C1 ROHM lot No

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces


    Original     		PDF SXA-289 SXA-289

    XA2 MMIC

    Abstract: No abstract text available
    Text: Preliminary Preliminary Product Description Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular


    Original     		PDF SXA-289 SXA-289 100mA EDS-100622 XA2 MMIC

    SXA-289

    Abstract: No abstract text available
    Text: Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces


    Original     		PDF SXA-289 SXA-289

    Untitled

    Abstract: No abstract text available
    Text: Product Description SXA-289 Stanford M icrodevices’ SXA-289 am plifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT am plifier housed in low-cost surface-m ountable plastic package. These HBT am plifiers are fabricated using m olecular beam epitaxial growth technology which produces


    OCR Scan     		PDF SXA-289 SXA-289