FAZ-C4 equivalent
Abstract: SPC-E-280 220V LED Bulb circuit diagram FAZ-XHI11 FAZ-S10 FAZ-B10 FIM-40 IEC 60898 category C z-r230 Z-KWZ/400/3-CT
Text: 12/0 Miniature Circuit-Breakers, MCB Enclosures, Fuse Enclosures Miniature Circuit-Breakers, MCB Enclosures, Fuse Enclosures Moeller HPL0211-2004/2005 For Immediate Delivery call KMParts.com at 866 595-9616 Overview 12/1 Miniature circuit-breakers MCB enclosures, fuse enclosures
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HPL0211-2004/2005
-GSTA-1/50
-GSTA-2/50
GST00
-40-60-AOU
FAZ-C4 equivalent
SPC-E-280
220V LED Bulb circuit diagram
FAZ-XHI11
FAZ-S10
FAZ-B10
FIM-40
IEC 60898 category C
z-r230
Z-KWZ/400/3-CT
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bcm 4330
Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?
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tms 1601
Abstract: mte maxim um1233 Omron Cross Reference HONEYWELL MODULATOR MOTOR Allen Bradley SLC500 PLC siemens s5 100u plc manual FR-U1205 scr regulator emergency light RS7660
Text: Discontinued and Superseded Data Sheet History. This document contains Discontinued and Superseded Data Sheet History. The information is listed in the following format: Data Sheet Number: The original RS data Sheet Number of the item. Brief Description: The Title of the Data Sheet.
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ihp 1c manual
Abstract: Nsx160b DC 24V double POLE MCB Schneider IC60N C CURVE A9C62216 schneider 15336 SCHNEIDER MCB
Text: Acti 9 Advanced Communication Technology that Inspires…… Leading Future. >Innovative >Efficient >Reliable About Schneider Electric About Schneider Electric As a global specialist in energy management, Schneider Electric offers integrated solutions across
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um1233
Abstract: HONEYWELL MODULATOR MOTOR RS7660 siemens servo motor connector tms 1601 Burr Brown PWR 74 ORP 12 SIMATIC S5-100u programming cable 014374 SN 576B
Text: Discontinued and Superseded Data Sheet History. This document contains Discontinued and Superseded Data Sheet History. The information is listed in the following format: Data Sheet Number: The original RS data Sheet Number of the item. Brief Description: The Title of the Data Sheet.
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FAZ-2-C16
Abstract: REG-sd230 moeller nzm7 FAZ-2-C6 FAZ-3-B16 FILS-C10-0 ELCB 4 pole reg-sud-w2k ELCB 3 pole FIP 7000
Text: 12/000 Miniature Circuit-Breakers MCB Enclosures, Fuse Enclosures Miniature Circuit-Breakers, MCB Enclosures, Fuse Enclosures Moeller HPL0211-2001/2002 12/001 Moeller HPL0211-2001/2002 Miniature circuit-breakers System overview Miniature circuit-breakers FAZ miniature circuit-breakers
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HPL0211-2001/2002
circuit-br1/2002
GST00
-40-60-AOU
-GSTA-1/50
-GSTA-2/50
FAZ-2-C16
REG-sd230
moeller nzm7
FAZ-2-C6
FAZ-3-B16
FILS-C10-0
ELCB 4 pole
reg-sud-w2k
ELCB 3 pole
FIP 7000
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TLR4182
Abstract: TLR2 TLR4
Text: TOSHIBA {DISCRETE/OPTO} "T í 9097250 TOSHIBA DISCRETE/OPTO m T | ^017250 99D 17256 OD 1 7 5 5 b 7 DT-M'l'-SS TLR2 I57, TLR4 I52, TLR2 I87, TLR4 I82 RED COLOR 4 D IG ITS L E D D ISP LA Y • Clock display for oultlplex drive operation and available both polarity
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TLR4152
TLR2187
Ipp-60mA
lF-10aA
0017E57
TLR4182
TLR2
TLR4
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Untitled
Abstract: No abstract text available
Text: TOSHIBA DISCRETE/OPTO 45E D TO S H IB A F IE L D E F F E C T TR A N S IS TO R SILICON N C H A N N EL MOS T Y P E (tt - • ^017250 □DlT'ibfl 1 «TO S H -YTFP151 MOSI) ' P i - ß INDUSTRIAL APPLICATIONS Unit in HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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----------------------------------YTFP151
045fi
VDS-60V
0VGS-10V
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} 9097250 ÏT TOSHIBA dF | ^017250 □□□□45b DISC R ETE/O PTO 39C 00426 T -3 i~ /7 O UHF~ S '' X K o ¡a f fi * * v f - v r f à O U H F ~ S Band Low N o i s e Amp l i 1 e r App 1 i c a t i one O Hi gh Sp e e d S w i t c h i n g A p p l i c a t i o n s
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2SC1552
2S0155Z
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OPTO 817 C
Abstract: 0817B opto 817 817 OPTO
Text: TOSHIBA {DISCRET E/OP TO 3- Sb 9097250 T O S H IB A i Ê| ^017250 0DQñl74 4 ‘j o C 0 817 '+ D IS C R E T E /O PT O ) T - 74- 09-01 TOSHIBA RF POWER AMPLIFIER MODULE 800MHE UHF POWER AMPLIFIER MODULE <FM) Unit in m m 6 6.0 FEATURES: -&ÜQ- . Output Power
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800MHE
50DInput/Output
OPTO 817 C
0817B
opto 817
817 OPTO
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Untitled
Abstract: No abstract text available
Text: PHOTO RELAY TLP595A TLP595A TELECOM M UNICATION DATA ACQUISITION M EASUREM ENT INSTRUMENTATION The TOSHIBA TLP595A consists of an alum inum gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package.
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TLP595A
TLP595A)
TLP595A
300mA
2500Vrms
UL1577,
E67349
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Untitled
Abstract: No abstract text available
Text: TOSHIBA { DI SC RE TE/OPTO} Tí 99D 16737 9 097250 TOSH I BA <DISCRETE/OPTO> ¿foSTulli, DE^I T D ci72SD GGlb737 7 D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S K 6 7 h T E C H N IC A L DA TA SILICON N CHANN EL MOS TYPE 7T-M0S I TENTATIVE INDUSTRIAL APPLICATIONS
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i72SD
GGlb737
100nA
300uA
00A/us
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power - PldB = 44.5 dBm at 7.7 GHz to 8.5 GHz
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TIM7785-30L
TIM7785-30L
MW51140196
DD22b3D
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TIM7785-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • H i g h power - P-|dB = 39 dBm at 7.7 GHz to 8.5 GHz
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TIM7785-8L
MW51080196
TIM7785-8L
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Untitled
Abstract: No abstract text available
Text: TOSHIBA J {DISCRETE/OPTO} 9097250 TOSHIBA tfoiìììbu m D eT | T O T 75-50 9 0 D 16270 <DISCRETE/OPTO SEMICONDUCTOR DDlti57D D T -3 3 - 3 5 TOSHIBA GTR MODULE MG 10 0H 2C K 1 SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS.
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DDlti57D
IC-100A)
DT-33
MG100H2CK1
R373RSE
EGA-MC100H2CKI-4
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16SL Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High efficiency - Tladd = 3_l% at 7-1 GHz to 7.9 GHz
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TIM7179-16SL
Q0225Bb
00225A7
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-16 Internally Matched Power GaAs FETs C-Band Features • High power • p i d B = 42.5 dBm at 5.3 GHz to 5.9 GHz • High gain - G1dB = 7.5 dB at 5.3 GHz to 5.9 GHz • Broad band internally matched • Hermetically sealed package
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TIM5359-16
MW50670196
0G2242b
TIM5359-16
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Untitled
Abstract: No abstract text available
Text: DiT| SOTTESO GDltESl 3 TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR 90D 16251 D 7 -3 3 - 3 5 TOSHIBA GTR MODULE MG75H6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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MG75H6EL1
Ic-75A)
Icm75A)
MG75H6EL1-1
MG75H6EL1-4
MG150Q2YK1
MG200Q1UK1
MG75Q2YK1
MG50Q2YK1
10Sec.
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY JS8905-AS FEATURES: ULTRA LOW NOISE FIGURE 0.9 dB at f = 18 GHz 1.4 dB a t f = 26GHz • 0.25 Aim GATE LENGTH SUPER HIGH ASSOCIATED GAIN 10 dB at f = 18 GHz 7 dB at f = 26 GHz ■ T-SHAPED GATE HIGH MAXIMUM AVAILABLE GAIN 1 2 d B a tf = 18 GHz
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JS8905-AS
26GHz
26GHz
10mA34
0D22C
TQT725D
0022T33
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TCD5241BD
Abstract: TCD5240D
Text: TCD6220AF TCD5241BD, TCD5240D, TCD5251BD, TCD5250D TIMING PULSE GENERATING IC The CMOS LSI of TC6220AF was developed to drive thè TCD5241BD, TCD5251BD, TCD5240D and TCD5250D. The TC6220AF can be combined with a vertical clock driver to constitute the CCD area image sensor driving
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TCD6220AF
TCD5241BD,
TCD5240D,
TCD5251BD,
TCD5250D
TC6220AF
TCD5240D
TCD5250D.
TCD5241BD
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2N3904
Abstract: 2N3906 2N3906 JEDEC
Text: 4SE D • =10=17250 0017746 IT O S H b TOSHIBA TRANSISTOR 2N3906 SILICON PNP EPITAXIAL T Y P E PCT PROCESS ~> TOSHIBA ' T ■i (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICEV~“50nA(Max.)» lBEV=50nA(Max.)
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-50nA
-50mA,
2N3904
2N3906
Q0177S1
2N3904
2N3906
2N3906 JEDEC
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2sc power amp TOSHIBA
Abstract: 2SC1551
Text: 3T TOSHIBA -CDISCRETE/OPTOl 9097250 TOSHIBA D I S C R E T E /O P T O 39C 00421 O U H F ~0' X K O Ö Ä ä * - i v f-y ? m O UHF~C O H i g h S p e e d Swi t c h i n g A p p i i c a t i o n s DË’J'ïa'iTasa 0000421 G ^ T - 3 Unit B a n d Low N o i s e A m p l i f i e r A p p l i c a t i o n s
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2SC1551
2sc power amp TOSHIBA
2SC1551
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JS8819-AS
Abstract: T-1228
Text: JS8819-AS FEA TU R ES: • LOW N O ISE FIG U R E ■ 0.5 G ATE LEN G TH ■ CH IP FO R M 1.1dB at f = 8 G H z I . 6 dB at f = 12 G H z ■ HIG H ASSO C IA TED GAIN I I . 5 dB at f = 8 G H z 9.5 dB at f = 12 G H z ■ H IG H M AXIM UM AVAILABLE GAIN 15.5 dB at F = 8 G H z
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JS8819-AS
JS8819-AS
T-1228
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET JS8850A-AS Power GaAs FETs Chip Form Features • High power - P-idB = 21.5 dBm at f = 15 GHz • High gain - G1dB = 9 d B a t f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)
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JS8850A-AS
15GHz
18GHz
H7E50
MW10100196
TGT72SÃ
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