H7E50 Search Results

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Text: TOSHIBA MICROWAVE POWER GaAs FET JS8850A-AS Power GaAs FETs Chip Form Features • High power - P-idB = 21.5 dBm at f = 15 GHz • High gain - G1dB = 9 d B a t f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)