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    01N60 Search Results

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    01N60 Price and Stock

    Micro Commercial Components MCU01N60A-TP

    N-CHANNEL MOSFET, DPAK
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    DigiKey MCU01N60A-TP Cut Tape 4,875 1
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    MCU01N60A-TP Digi-Reel 4,875 1
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    MCU01N60A-TP Reel 2,500 2,500
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    Mouser Electronics MCU01N60A-TP 2,458
    • 1 $0.63
    • 10 $0.544
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    New Advantage Corporation MCU01N60A-TP 5,000 1
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    Infineon Technologies AG IKN01N60RC2ATMA1

    IGBT 600V 2.2A SOT223-3
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    DigiKey IKN01N60RC2ATMA1 Cut Tape 2,984 1
    • 1 $0.92
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    IKN01N60RC2ATMA1 Digi-Reel 2,984 1
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    IKN01N60RC2ATMA1 Reel 3,000
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    Avnet Americas IKN01N60RC2ATMA1 Reel 19 Weeks 3,000
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    Mouser Electronics IKN01N60RC2ATMA1 2,744
    • 1 $0.73
    • 10 $0.544
    • 100 $0.391
    • 1000 $0.246
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    Newark IKN01N60RC2ATMA1 Cut Tape 232 1
    • 1 $0.287
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    Rochester Electronics IKN01N60RC2ATMA1 105,000 1
    • 1 $0.1997
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    • 100 $0.1877
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    Chip1Stop IKN01N60RC2ATMA1 Cut Tape 2,955
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    EBV Elektronik IKN01N60RC2ATMA1 20 Weeks 3,000
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    Infineon Technologies AG SPS01N60C3

    MOSFET N-CH 650V 800MA TO251-3
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    DigiKey SPS01N60C3 Tube
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    Rochester Electronics SPS01N60C3 43,500 1
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    • 100 $0.2873
    • 1000 $0.2598
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    Infineon Technologies AG SPN01N60C3

    MOSFET N-CH 650V 300MA SOT223-4
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    DigiKey SPN01N60C3 Reel 1,000
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    ComSIT USA SPN01N60C3 2,635
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    onsemi NDD01N60-1G

    MOSFET N-CH 600V 1.5A IPAK
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    DigiKey NDD01N60-1G Tube
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    Rochester Electronics NDD01N60-1G 8,291 1
    • 1 $0.2058
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    Find more 01N60 price and stock on Findchips.com

    01N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    01N60S5

    Abstract: 01N60 SPD01N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193
    Text: 01N60S5 01N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on


    Original     		PDF SPU01N60S5 SPD01N60S5 P-TO252 P-TO251-3-1 SPUx7N60S5/SPDx7N60S5 Q67040-S4193 01N60S5 01N60S5 01N60 SPD01N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193

    01n60

    Abstract: 01N60C3 SPS01N60C3
    Text: 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO251-3-11 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPS01N60C3 PG-TO251-3-11 PG-TO251-3-11 01N60C3 01n60 01N60C3 SPS01N60C3

    01N60C3

    Abstract: SPN01N60C3 VPS05163 smd diode MARKING 03A
    Text: 01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.3 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN01N60C3 OT-223 Q67040-S4208 VPS05163 01N60C3 01N60C3 SPN01N60C3 VPS05163 smd diode MARKING 03A

    SPD01N60S5

    Abstract: 01N60S5 SPU01N60S5 01N60 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193
    Text: 01N60S5 01N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 6 Ω ID 0.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60S5 SPD01N60S5 P-TO252 P-TO251-3-1 Q67040-S4193 01N60S5 SPD01N60S5 01N60S5 SPU01N60S5 01N60 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193

    01N60

    Abstract: BFR 965 01N6 dpak 369C NDD01N60
    Text: 01N60, 01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ABSOLUTE MAXIMUM RATINGS TJ = 25°C unless otherwise noted Drain−to−Source Voltage


    Original     		PDF NDD01N60, NDT01N60 NDD01N60/D 01N60 BFR 965 01N6 dpak 369C NDD01N60

    01N60S5

    Abstract: SPD01N60S5 SPU01N60S5
    Text: 01N60S5 01N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPU01N60S5 SPD01N60S5 SPUx7N60S5/SPDx7N60S5 P-TO251-3-1 P-TO252 01N60S5 01N60S5 Q67040-S4193 SPD01N60S5

    Untitled

    Abstract: No abstract text available
    Text: 01N60S5 Preliminary data Cool MOS Small-Signal-Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology D,2/4 • Ultra low gate charge 4 • Extreme dv/dt rated 3 •=Optimized capacitances G,1 2 S,3 •=Improved noise immunity


    Original     		PDF SPN01N60S5 SPN01N60S5 OT-223 01N60S5 VPS05163 Q67040-S4208

    Untitled

    Abstract: No abstract text available
    Text: NDDL1N60Z, NDTL1N60Z Product Preview N-Channel Power MOSFET 600 V, 15 W Features http://onsemi.com • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V BR DSS RDS(ON) MAX 600 V 15 W @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)


    Original     		PDF NDDL1N60Z, NDTL1N60Z NDDL1N60Z/D

    SPN01N60S5

    Abstract: 01n60 01N60S5 GPS05560 VPS05163
    Text: 01N60S5 Preliminary data D,2/4 Cool MOS Small-Signal-Transistor 4 • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated 3 G,1 • Optimized capacitances 2 S,3 1 • Improved noise immunity VPS05163 COOLMOS Power Semiconductors


    Original     		PDF SPN01N60S5 VPS05163 SPN01N60S5 OT-223 01N60S5 Q67040-S4208 01n60 01N60S5 GPS05560 VPS05163

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    TRANSISTOR SMD MARKING CODE 2A

    Abstract: 01N60C3 01n60 SPN01N60C3 VPS05163 smd diode MARKING 03A
    Text: 01N60C3 Rev. 2.1 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.3 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN01N60C3 OT-223 Q67040-S4208 VPS05163 01N60C3 TRANSISTOR SMD MARKING CODE 2A 01N60C3 01n60 SPN01N60C3 VPS05163 smd diode MARKING 03A

    01N60C3

    Abstract: 01N60 603 to252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3
    Text: 01N60C3 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60C3 SPD01N60C3 PG-TO252 PG-TO251 Q67040-S4193 01N60C3 01N60C3 01N60 603 to252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3

    01N60C3

    Abstract: P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3 01N60
    Text: 01N60C3 01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60C3 SPD01N60C3 P-TO252 P-TO251-3-1 Q67040-S4193 01N60C3 01N60C3 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3 01N60

    01N60S5

    Abstract: 01n60 SPD01N60S5 SPU01N60S5
    Text: 01N60S5 01N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252


    Original     		PDF SPU01N60S5 SPD01N60S5 SPUx7N60S5/SPDx7N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4193 01N60S5 01n60 SPD01N60S5

    SPN01N60S5

    Abstract: No abstract text available
    Text: 01N60S5 Final data Cool MOSä ä Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax • Optimized capacitances RDS on • Improved noise immunity ID 650 V 6 Ω 0.3


    Original     		PDF SPN01N60S5 OT-223 VPS05163 Q67040-S4208 01N60S5 SPN01N60S5

    01n60c3

    Abstract: PG-TO251-3-1
    Text: 01N60C3 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60C3 SPD01N60C3 PG-TO252 PG-TO251-3-1 SPD01N60C3 Q67040-S4188 01N60C3 01N60C3 PG-TO251-3-1

    Untitled

    Abstract: No abstract text available
    Text: 01N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO251-3-11 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPS01N60C3 PG-TO251-3-11 PG-TO251-3-11 01N60C3 PG-TO-251-3-11

    01N60C

    Abstract: 01n60c3 SPS01N60C3 01N60
    Text: 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO251-3-11 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPS01N60C3 PG-TO251-3-11 PG-TO251-3-11 01N60C3 PG-TO-251-3-11 01N60C 01n60c3 SPS01N60C3 01N60

    01N60

    Abstract: 01n60c3 P-TO251-3-1 603 marking to252 P-TO252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3 01N6
    Text: 01N60C3 01N60C3 Rev. 2.0 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60C3 SPD01N60C3 P-TO252 P-TO251-3-1 Q67040-S4193 01N60C3 01N60 01n60c3 P-TO251-3-1 603 marking to252 P-TO252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3 01N6

    V4680

    Abstract: 01N60S5 SPN01N60S5 smd diode code 03a GPS05560 VPS05163 smd diode MARKING 03A
    Text: 01N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS •=New revolutionary high voltage technology Power Semiconductors • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax •=Optimized capacitances RDS on •=Improved noise immunity


    Original     		PDF SPN01N60S5 OT-223 Q67040-S4208 VPS05163 01N60S5 V4680 01N60S5 SPN01N60S5 smd diode code 03a GPS05560 VPS05163 smd diode MARKING 03A

    01N60

    Abstract: SID01N FET marking code RD-187 FET marking codes FET MARKING QG 100C RD187
    Text: 01N60 1.6A, 600V,RDS ON 8Ω N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product TO-251 Description 2.3±0.1 6.6±0.2 5.3±0.2 The 01N60 provide the designer with the best combination 0.5±0.05 of fast switching.


    Original     		PDF SID01N60 O-251 SID01N60 O-251 01N60 01-Jun-2002 01N60 SID01N FET marking code RD-187 FET marking codes FET MARKING QG 100C RD187

    TO-251 footprint

    Abstract: 01n60c3 603 marking to252 infineon marking TO-252 SPU01N60C3 603 to252 Q67040-S4188 Q67040-S4193 SPD01N60C3 01n60
    Text: 01N60C3 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60C3 SPD01N60C3 PG-TO252 PG-TO251 Q67040-S4193 01N60C3 TO-251 footprint 01n60c3 603 marking to252 infineon marking TO-252 SPU01N60C3 603 to252 Q67040-S4188 Q67040-S4193 SPD01N60C3 01n60

    Untitled

    Abstract: No abstract text available
    Text: 01N60C3 01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60C3 SPD01N60C3 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4193 Q67040-S4188

    01N60J

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. 01N60H/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D 100% Avalanche Test Fast Switching Characteristics G RoHS-compliant, halogen-free BV DSS 600V R DS ON 8Ω ID 1.6A S Description D (tab) G


    Original     		PDF AP01N60H/J-HF-3 O-252 AP01N60H-HF-3 O-252 O-251 AP01N60J-HF-3) AP01N60 01N60J O-251 01N60J