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    Infineon Technologies AG SPU01N60S5

    COOL MOS POWER TRANSISTOR Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
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    01N60S5 Datasheets Context Search

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    01N60S5

    Abstract: 01N60 SPD01N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193
    Text: 01N60S5 01N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on


    Original     		PDF SPU01N60S5 SPD01N60S5 P-TO252 P-TO251-3-1 SPUx7N60S5/SPDx7N60S5 Q67040-S4193 01N60S5 01N60S5 01N60 SPD01N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193

    SPD01N60S5

    Abstract: 01N60S5 SPU01N60S5 01N60 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193
    Text: 01N60S5 01N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 6 Ω ID 0.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60S5 SPD01N60S5 P-TO252 P-TO251-3-1 Q67040-S4193 01N60S5 SPD01N60S5 01N60S5 SPU01N60S5 01N60 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193

    01N60S5

    Abstract: SPD01N60S5 SPU01N60S5
    Text: 01N60S5 01N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPU01N60S5 SPD01N60S5 SPUx7N60S5/SPDx7N60S5 P-TO251-3-1 P-TO252 01N60S5 01N60S5 Q67040-S4193 SPD01N60S5

    Untitled

    Abstract: No abstract text available
    Text: 01N60S5 Preliminary data Cool MOS Small-Signal-Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology D,2/4 • Ultra low gate charge 4 • Extreme dv/dt rated 3 •=Optimized capacitances G,1 2 S,3 •=Improved noise immunity


    Original     		PDF SPN01N60S5 SPN01N60S5 OT-223 01N60S5 VPS05163 Q67040-S4208

    SPN01N60S5

    Abstract: 01n60 01N60S5 GPS05560 VPS05163
    Text: 01N60S5 Preliminary data D,2/4 Cool MOS Small-Signal-Transistor 4 • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated 3 G,1 • Optimized capacitances 2 S,3 1 • Improved noise immunity VPS05163 COOLMOS Power Semiconductors


    Original     		PDF SPN01N60S5 VPS05163 SPN01N60S5 OT-223 01N60S5 Q67040-S4208 01n60 01N60S5 GPS05560 VPS05163

    01N60S5

    Abstract: 01n60 SPD01N60S5 SPU01N60S5
    Text: 01N60S5 01N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252


    Original     		PDF SPU01N60S5 SPD01N60S5 SPUx7N60S5/SPDx7N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4193 01N60S5 01n60 SPD01N60S5

    SPN01N60S5

    Abstract: No abstract text available
    Text: 01N60S5 Final data Cool MOSä ä Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax • Optimized capacitances RDS on • Improved noise immunity ID 650 V 6 Ω 0.3


    Original     		PDF SPN01N60S5 OT-223 VPS05163 Q67040-S4208 01N60S5 SPN01N60S5

    V4680

    Abstract: 01N60S5 SPN01N60S5 smd diode code 03a GPS05560 VPS05163 smd diode MARKING 03A
    Text: 01N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS •=New revolutionary high voltage technology Power Semiconductors • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax •=Optimized capacitances RDS on •=Improved noise immunity


    Original     		PDF SPN01N60S5 OT-223 Q67040-S4208 VPS05163 01N60S5 V4680 01N60S5 SPN01N60S5 smd diode code 03a GPS05560 VPS05163 smd diode MARKING 03A

    SPD01N60S5

    Abstract: SPU01N60S5 01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193
    Text: 01N60S5 01N60S5 Preliminary data D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated G,1 S,3 • Extreme dv/dt rated • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		PDF SPU01N60S5 SPD01N60S5 SPUx7N60S5/SPDx7N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 01N60S5 Q67040-S4193 SPD01N60S5 01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193

    SPN01N60S5

    Abstract: 01N60S5 VPS05163 smd diode MARKING 03A
    Text: 01N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.3 A • Extreme dv/dt rated SOT-223 • Ultra low effective capacitances 4 • Improved noise immunity


    Original     		PDF SPN01N60S5 OT-223 Q67040-S4208 VPS05163 01N60S5 SPN01N60S5 01N60S5 VPS05163 smd diode MARKING 03A